20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

High-repetition-rate MHz acoustooptic Q-switched fiber laser

A simple actively Q-switched double-clad fiber laser combining an amplifying cavity is reported by using a dynamic acoustooptic Q-switching as a beam splitter. Sub-100-ns. pulses independence of the repetition rate of acoustooptic modulator are almost changeless with repetition rate varied from 50 kHz to 1.5 MHz. With 4.5-W absorbed power, 9.4-W peak-power pulses at 1.5-MHz repetition rate with 75-ns pulse duration are generated.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

ANNEALING BEHAVIOUR OF HIGH DOSE As** plus IMPLANTS.

The annealing behaviour of doses up to 4. 10**1**6 ions/cm**2 implanted at ion currents up to 10ma is described. Differences between rapid isothermal and furnace annealing in the measured sheet resistances are due to different amounts of diffusion and to loss of dopant by evaporation. Implantation at high currents (10ma) does not appear to affect the quality of the regrown material provided the temperature rise during implantation is small.