Increasing Creel Interview Efficiency Through Early Survey Termination

Operational modifications based on recreational angler activity patterns can be successfully formulated to increase creel survey efficiency without a significant loss of information. This study was conducted to estimate the amount of Texas marine sport-boat angler interview and retained fish data (bay and Gulf) that would be missed both coastwide and within each bay system if surveys were terminated early when no angler interviews were conducted by a specified time. Using this method, <3 percent of the total interviews and retained fish would be missed coastwide by terminating surveys at 1400 hours on weekends and 1600 hours on weekdays throughout the survey year. This would result in the early termination of 14 percent of the weekend surveys and 23 percent of the weekday surveys, thus allowing an annual redirection of 440 work-hours and $6,063 in operating expenses.

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Fabrication of diamond based schottky barrier diodes with oxide ramp termination

The paper's goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer nonuniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included. © 2007 IEEE.