New approach to superresolution

We propose a new method to increase the resolution of an optical system by modifying part of the spatial-frequency spectrum, viz., displacing the lower-frequency light to a high-frequency band, which makes the central maximum in the diffraction pattern narrower and increases the depth of focus. Simulation results show that this kind of apodizer (the term apodization was originally used to describe ways to reduce the sidelobes of the PSF, but in this paper, we use it in a wider sense) is superior to the phase-shifting ones. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

水热法生长复合钛宝石激光晶体

水热法生长了复合钛宝石(Al2O3／Ti：Al2O3)激光晶体．对外层Al2O3X射线ω扫描表明其晶体质量很高．外层生长的Al2O3和内部的钛宝石激光棒结合牢固、紧密，因而能适应高强度泵浦所带来的激光介质内部的热应力．复合激光晶体界面层带来的光损耗很小．就我们所知，这是首次用水热法生长复合激光晶体．

Surface morphology and properties of zirconia thin films prepared at different deposition rates

ZrO2 thin films were prepared on BK7 glass substrates by electron beam evaporation deposition method. The influence of deposition rate varying from 1.2 to 6.3 nm s(-1) on surface morphology and other properties of ZrO2 films were examined. With increasing deposition rate, the surface defect density increased. The decrease in half width at full maximum in X-ray diffraction pattern with deposition rate indicates an increase in crystal dimension with increasing deposition rate. Electron beam deposited ZrO2 films are known to be inhomogeneous. From the change of the peak transmittance value, it can be deduced that the inhomogeneity of ZrO2 films strengthened gradually with increasing deposition rate. The type of surface defects changed from nodules to craters when the deposition rate was high enough.

Identificação da formação de titanato de bário a partir de mistura reacional calcinada em diferentes temperaturas via difração de raios X, espectroscopia fotoacústica e análise térmica

Os materiais ferroelétricos têm sido utilizados em muitas áreas da tecnologia e da ciência, pois possuem um grande número de aplicações, como: sensores; transdutores; capacitores; dispositivos ópticos; dentre outras. A busca por novos materiais cerâmicos ferroelétricos tem sido grande. Um dos materiais cerâmicos ferroelétricos mais estudados é o titanato de bário (BT). São vários os métodos de produção e caracterização do titanato de bário. Neste trabalho, pós cerâmicos de titanato de bário foram obtidos por reação do estado sólido a partir de misturas reacionais calcinadas em diferentes temperaturas entre 400C e 900C. Foram três as misturas reacionais: não dopadas; dopadas com 1%; e dopadas com 5% de dióxido de cério (CeO2). A identificação da formação do BT, nos pós cerâmicos produzidos, foi feita a partir de três técnicas de caracterização: difração de raios X (DRX); espectroscopia fotoacústica (PAS); e técnicas de análise térmica. Com a técnica DRX, difratogramas mostraram que a plena formação do titanato de bário ocorreu a partir da temperatura de calcinação de 700C. Para a amostra não dopada com cério e calcinada a 800C, houve deslocamento de todos os picos de difração. Nas amostras dopadas com dióxido de cério houve deslocamento de todos os picos de difração, em relação as amostras não dopadas. Observou-se também que nas amostras dopadas com 5% de CeO2, e calcinadas a 700C e 800C, resíduos de dióxido de cério foram observados nos difratogramas. Com a técnica PAS, espectros de absorção foram obtidos. Foi possível observar uma grande diferença de absorção da amostra calcinada a 600 e 630C, indicando a formação do titanato de bário a partir da temperatura de 630C, nas amostras sem a dopagem dióxido de cério. Houve um alargamento nas bandas de absorção a partir da temperatura de 600C, quando o dióxido de cério entrou na matriz. Foi também possível determinar as energias de band-gap das amostras utilizando o método de Tauc. Com as técnicas de análise térmica, em especial através da técnica termogravimétrica (TG/DTG), foi comprovado que até 400C não havia formação de titanato de bário. Visto que nesta temperatura de calcinação houve a maior perda de massa durante a rampa de aquecimento. O início da formação do titanato de bário foi observado a partir da temperatura de calcinação de 500C, assim como nas técnicas DRX e PAS. Portanto, com os resultados apresentados, foi demonstrada a identificação da formação do titanato de bário nas misturas reacionais calcinadas, com auxílio das potencialidades das três técnicas utilizadas.

Encapsluation of Co and Pd multi-metal nanowires inside multiwalled carbon nanotubes by microwave plasma chemical vapor deposition

We report the synthesis of multiwalled carbon nanotubes (MWCNTs) encapsulated with Co/Pd magnetic and nonmagnetic multi-metal nanowires using Co and Pd thin-layers deposited on Si substrate by microwave plasma enhanced chemical vapor deposition using a bias-enhanced growth method. Detailed structural and compositional investigations of these metal nanowires inside MWCNTs were carried out by scanning electron microscopy and transmission electron microscopy to elucidate the growth mechanisms. Energy dispersive X-ray spectroscopy revealed that MWCNTs were encapsulated with Co and Pd nanowires, separately, at the tube top and the bottom of Co nanowire, respectively. The face-centered-cubic (fcc) structure of Co nanowires was confirmed by a selected area diffraction pattern. We proposed a fruitful description for the encapsulating mechanisms of both Co and Pd multi-metal nanowires. © 2006 Elsevier B.V. All rights reserved.

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched “on” and “off” reversibly in 600 µs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times.

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched on and off reversibly in 600 μs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times. © 2011 American Institute of Physics.

Characterisation of different commercial reactive magnesia

Reactive magnesia (MgO) has emerged as an essential component in a new family of cements with significantly superior technical and environmental performance over Portland cement. The physical characteristics of different reactive magnesia, which are likely to affect their engineering performance, vary considerably depending on their origin and manufacturing processes. To appropriately utilise such a material, it is essential to develop a better understanding of the characteristics of different magnesia from various sources. In this study, the detailed characterisation of 14 commercial magnesia in terms of reactivity, textural properties, X-ray diffraction pattern, pH value and hydration behaviour and morphology is presented and correlation between them is developed. Relationships were developed between the reactivity, specific surface area, agglomeration ratio and hydration rate based on the experimental observations. As a result, the reactive magnesia used in this study were grouped into three categories and their characteristics and anticipated performances in different applications were discussed.

Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

Epitaxial growth of AlN has been performed by molecular beam epitaxy (MBE) with ammonia. The structural properties of materials were studied by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). XRD and TEM diffraction pattern confirm the AlN is single crystalline 2H-polytype with the epitaxial relationship of (0001)AlNparallel to(111)Si, [11 (2) over bar0](AlN)parallel to[110](Si), [10 (1) over bar0](AlN)parallel to[11 (2) over bar](Si). Micro-Raman scattering measurement shows that the E-2 (high) and A(1) (LO) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the AlN films. Furthermore, the appearance of forbidden A, (TO) mode and its anomalous shift toward high frequency was found and explained. (C) 2002 Elsevier Science B.V. All rights reserved.

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Field emission from the structure of well-aligned TiO2/Ti nanotube arrays

Well-aligned TiO2/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anoclization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anoclization voltage. The peaks at 25.3 degrees and 48.0 degrees of X-ray diffraction pattern illuminate that the TiO2 nanotube arrays annealed at 500 degrees C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/mu m, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm(2) were obtained. The emission current (2.3 mA/cm(2) at 18.8 V/mu m) was quite stable within 480 min. The results show that the FE properties of TiO2/Ti have much relation to the structure parameters.

Fabrication and characterization of CdTe nanoparticles attached to poly(4-vinylpyridine) nanofibers

The major objective of this work was to characterize the status of CdTe nanoparticles attached to the surface of poly(4-vinylpyridine) (P4VP) nanofibers. Scanning electron microscopy and transmission electron microscopy images indicated that the attachment of CdTe nanoparticles enlarged the diameter of P4VP nanofibers. Moreover, the results of the energy-dispersive X-ray spectrum and the electron diffraction pattern revealed that the deposition on the surface of P4VP nanofibers was CdTe in a cubic lattice