Time-Resolved Photoluminescence in Antimonide and Dilute Nitride Quantum Well Structures

This Master's thesis is devoted to semiconductor samples study using time-resolved photoluminescence. This method allows investigating recombination in semiconductor samples in order to develop quality of optoelectronic device. An additional goal was the method accommodation for low-energy-gap materials. The first chapter gives a brief intercourse into the basis of semiconductor physics. The key features of the investigated structures are noted. The usage area of the results covers saturable semiconductor absorber mirrors, disk lasers and vertical-external-cavity surface-emittinglasers. The experiment set-up is described in the second chapter. It is based on up-conversion procedure using a nonlinear crystal and involving the photoluminescent emission and the gate pulses. The limitation of the method was estimated. The first series of studied samples were grown at various temperatures and they suffered rapid thermal annealing. Further, a latticematched and metamorphically grown samples were compared. Time-resolved photoluminescence method was adapted for wavelengths up to 1.5 µm. The results allowed to specify the optimal substrate temperature for MBE process. It was found that the lattice-matched sample and the metamorphically grown sample had similar characteristics.

Low-intensity red and infrared laser effects at high fluences on Escherichia coli cultures

Semiconductor laser devices are readily available and practical radiation sources providing wavelength tenability and high monochromaticity. Low-intensity red and near-infrared lasers are considered safe for use in clinical applications. However, adverse effects can occur via free radical generation, and the biological effects of these lasers from unusually high fluences or high doses have not yet been evaluated. Here, we evaluated the survival, filamentation induction and morphology of Escherichia coli cells deficient in repair of oxidative DNA lesions when exposed to low-intensity red and infrared lasers at unusually high fluences. Cultures of wild-type (AB1157), endonuclease III-deficient (JW1625-1), and endonuclease IV-deficient (JW2146-1) E. coli, in exponential and stationary growth phases, were exposed to red and infrared lasers (0, 250, 500, and 1000 J/cm2) to evaluate their survival rates, filamentation phenotype induction and cell morphologies. The results showed that low-intensity red and infrared lasers at high fluences are lethal, induce a filamentation phenotype, and alter the morphology of the E. coli cells. Low-intensity red and infrared lasers have potential to induce adverse effects on cells, whether used at unusually high fluences, or at high doses. Hence, there is a need to reinforce the importance of accurate dosimetry in therapeutic protocols.

Nonlinear Dynamics of Semiconductor LasersControl and Synchronization of Chaos:

Nonlinear dynamics of laser systems has become an interesting area of research in recent times. Lasers are good examples of nonlinear dissipative systems showing many kinds of nonlinear phenomena such as chaos, multistability and quasiperiodicity. The study of these phenomena in lasers has fundamental scientific importance since the investigations on these effects reveal many interesting features of nonlinear effects in practical systems. Further, the understanding of the instabilities in lasers is helpful in detecting and controlling such effects. Chaos is one of the most interesting phenomena shown by nonlinear deterministic systems. It is found that, like many nonlinear dissipative systems, lasers also show chaos for certain ranges of parameters. Many investigations on laser chaos have been done in the last two decades. The earlier studies in this field were concentrated on the dynamical aspects of laser chaos. However, recent developments in this area mainly belong to the control and synchronization of chaos. A number of attempts have been reported in controlling or suppressing chaos in lasers since lasers are the practical systems aimed to operated in stable or periodic mode. On the other hand, laser chaos has been found to be applicable in high speed secure communication based on synchronization of chaos. Thus, chaos in laser systems has technological importance also. Semiconductor lasers are most applicable in the fields of optical communications among various kinds of laser due to many reasons such as their compactness, reliability modest cost and the opportunity of direct current modulation. They show chaos and other instabilities under various physical conditions such as direct modulation and optical or optoelectronic feedback. It is desirable for semiconductor lasers to have stable and regular operation. Thus, the understanding of chaos and other instabilities in semiconductor lasers and their xi control is highly important in photonics. We address the problem of controlling chaos produced by direct modulation of laser diodes. We consider the delay feedback control methods for this purpose and study their performance using numerical simulation. Besides the control of chaos, control of other nonlinear effects such as quasiperiodicity and bistability using delay feedback methods are also investigated. A number of secure communication schemes based on synchronization of chaos semiconductor lasers have been successfully demonstrated theoretically and experimentally. The current investigations in these field include the study of practical issues on the implementations of such encryption schemes. We theoretically study the issues such as channel delay, phase mismatch and frequency detuning on the synchronization of chaos in directly modulated laser diodes. It would be helpful for designing and implementing chaotic encryption schemes using synchronization of chaos in modulated semiconductor laser

Development of directly modulated high speed telecommunication lasers based on surface defined feedback gratings

High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.

Sagnac rotational phase shifts in a mesoscopic electron interferometer with spin-orbit interactions

The Sagnac effect is an important phase coherent effect in optical and atom interferometers where rotations of the interferometer with respect to an inertial reference frame result in a shift in the interference pattern proportional to the rotation rate. Here, we analyze the Sagnac effect in a mesoscopic semiconductor electron interferometer. We include in our analysis the Rashba spin-orbit interactions in the ring. Our results indicate that spin-orbit interactions increase the rotation-induced phase shift. We discuss the potential experimental observability of the Sagnac phase shift in such mesoscopic systems.

Low-power vertical cavity NAND gate

The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.

High brightness semiconductor lasers as transmitters for space lidar systems

High brightness semiconductor lasers are potential transmitters for future space lidar systems. In the framework of the European Project BRITESPACE, we propose an all-semiconductor laser source for an Integrated Path Differential Absorption lidar system for column-averaged measurements of atmospheric CO2 in future satellite missions. The complete system architecture has to be adapted to the particular emission properties of these devices using a Random Modulated Continuous Wave approach. We present the initial experimental results of the InGaAsP/InP monolithic Master Oscillator Power Amplifiers, providing the ON and OFF wavelengths close to the selected absorption line around 1572 nm.

Lasers - An effective artificial source of radiation for the cultivation of anoxygenic photosynthetic bacteria

The laser diode (LD) is a unique light source that can efficiently produce all radiant energy within the narrow wavelength range used most effectively by a photosynthetic microorganism. We have investigated the use of a single type of LID for the cultivation of the well-studied anoxygenic photosynthetic bacterium, Rhodobacter capsulatus (Rb. capsulatus). An array of vertical-cavity surface-emitting lasers (VCSELs) was driven with a current of 25 mA, and delivered radiation at 860 nm with 0.4 nm linewidth. The emitted light was found to be a suitable source of radiant energy for the cultivation of Rb. capsulatus. The dependence of growth rate on incident irradiance was quantified. Despite the unusual nearly monochromatic light source used in these experiments, no significant changes in the pigment composition and in the distribution of bacteriochlorophyll between LHII and LHI-RC were detected in bacterial cells transferred from incandescent light to laser light. We were also able to show that to achieve a given growth rate in a light-limited culture, the VCSEL required only 30% of the electricity needed by an incandescent bulb, which is of great significance for the potential use of laser-devices in biotechnological applications and photobioreactor construction. (c) 2006 Wiley Periodicals, Inc.

The use of loop mirrors and chirped fibre Bragg gratings in actively-modelocked fibre lasers

The development of an all-optical communications infrastructure requires appropriate optical switching devices and supporting hardware. This thesis presents several novel fibre lasers which are useful pulse sources for high speed optical data processing and communications. They share several attributes in common: flexibility, stability and low-jitter output. They all produce short (picosecond) and are suitable as sources for soliton systems. The lasers are all-fibre systems using erbium-doped fibre for gain, and are actively-modelocked using a dual-wavelength nonlinear optical loop mirror (NOLM) as a modulator. Control over the operating wavelength and intra-cavity dispersion is obtained using a chirped in-fibre Bragg grating.Systems operating both at 76MHz and gigahertz frequencies are presented, the latter using a semiconductor laser amplifier to enhance nonlinear action in the loop mirror. A novel dual-wavelength system in which two linear cavities share a common modulator is presented with results which show that the jitter between the two wavelengths is low enough for use in switching experiments with data rates of up to 130Gbit/s.

All-fiber passively mode-locked femtosecond laser using a 45º-tilted fiber grating polarization element

We report on the demonstration of an all-fiber femtosecond erbium doped fiber laser passively mode-locked using a 45º tilted fiber grating as an in-fiber polarizer in the laser cavity. The laser generates 600 fs pulses with output pulse energies ~1 nJ. Since the 45° tilted grating has a broad polarization response, the laser output has shown a tunabilty in wavelength from 1548 nm to 1562 nm by simply adjusting the polarization controllers in the cavity.

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

Orange-to-red tunable picosecond pulses by frequency doubling in a diode-pumped PPKTP waveguide

A compact picosecond all-room-temperature orange-to-red tunable laser source in the spectral region between 600 and 627 nm is demonstrated. The tunable radiation is obtained by second-harmonic generation in a periodically poled potassium titanyl phosphate (PPKTP) multimode waveguide using a tunable quantum-dot external-cavity mode-locked laser. The maximum second-harmonic output peak power of 3.91 mW at 613 nm is achieved for 85.94 mW of launched pump peak power at 1226 nm, resulting in conversion efficiency of 4.55%. © 2013 Optical Society of America.

On-off and multistate intermittencies in cascaded random distributed feedback fibre laser

A range of physical and engineering systems exhibit an irregular complex dynamics featuring alternation of quiet and burst time intervals called the intermittency. The intermittent dynamics most popular in laser science is the on-off intermittency [1]. The on-off intermittency can be understood as a conversion of the noise in a system close to an instability threshold into effective time-dependent fluctuations which result in the alternation of stable and unstable periods. The on-off intermittency has been recently demonstrated in semiconductor, Erbium doped and Raman lasers [2-5]. Recently demonstrated random distributed feedback (random DFB) fiber laser has an irregular dynamics near the generation threshold [6,7]. Here we show the intermittency in the cascaded random DFB fiber laser. We study intensity fluctuations in a random DFB fiber laser based on nitrogen doped fiber. The laser generates first and second Stokes components 1120 nm and 1180 nm respectively under an appropriate pumping. We study the intermittency in the radiation of the second Stokes wave. The typical time trace near the generation threshold of the second Stokes wave (Pth) is shown at Fig. 1a. From the number of long enough time-traces we calculate statistical distribution between major spikes in time dynamics, Fig. 1b. To eliminate contribution of high frequency components of spikes we use a low pass filter along with the reference value of the output power. Experimental data is fitted by power law, ~(P-Pth)y, where is a mean time between pikes. There are two different intermittency regimes. Just above Pth, the mean time is approximated by the -3/2 power law. The -3/2 power law is typical to the on-off intermittency with hopping between two states (first and second Stokes waves in our case) [7]. At higher power, the mean time is approximated by -4 power law, that indicates a change in intermittency type to multistate. Multistable dynamics is observed in erbium-doped fiber lasers [8]. The origin of multiples states in our system could be probably connected with polarization hopping or other reasons and should be further investigated. We have presented a first experimental statistical characterisation of the on-off and multistate intermittencies that occur in the generation of the second Stokes wave in nitrogen doped random DFB fiber laser. References [1] H. Fujisaka and T. Yamada, “A New Intermittency in Coupled Dynamical Systems,” Prog. Theor. Phys. 74, 918 (1985). [2] S. Osborne, A. Amann, D. Bitauld, and S. O’Brien, “On-off intermittency in an optically injected semiconductor laser,” Phys. Rev. E 85, 056204 (2012). [3] S. Sergeyev, K. O'Mahoney, S. Popov, and A. T. Friberg, “Coherence and anticoherence resonance in high-concentration erbium-doped fiber laser,” Opt. Lett. 35, 3736 (2010). [4] A.E. El-Taher, S.V. Sergeyev, E.G. Turitsyna, P. Harper, and S. K. Turitsyn, “Intermittent Self-Pulsing in a Fiber Raman Laser”, In proc. Conf. Nonlin. Photon., paper ID 1367139, Colorado Springs, USA, 2012 [5] S.K. Turitsyn, S.A. Babin, A.E. El-Taher, P. Harper, D.V. Churkin, S.I. Kablukov, J.D. Ania-Castañón, V. Karalekas, and E.V. Podivilov, “Random distributed feedback fibre laser”, Nat. Photon..4, 231 (2010). [6] I. D. Vatnik, D. V. Churkin, S. A. Babin, and S. K. Turitsyn, "Cascaded random distributed feedback Raman fiber laser operating at 1.2 μm," Opt. Express 19, 18486 (2011). [7] W. Feller, An introduction to probability theory and its applications, Vol. 1, 3rd ed. (Wiley, New-York, 1968). [8] G. Huerta-Cuellar, A.N. Pisarchik, and Y.O. Barmenkov, “Experimental characterization of hopping dynamics in a multistable fiber laser,” Phys. Rev. E 78, 035202(R) (2008).

Optical trapping with superfocused high-M2 laser diode beam

Many applications of high-power laser diodes demand tight focusing. This is often not possible due to the multimode nature of semiconductor laser radiation possessing beam propagation parameter M2 values in double-digits. We propose a method of 'interference' superfocusing of high-M2 diode laser beams with a technique developed for the generation of Bessel beams based on the employment of an axicon fabricated on the tip of a 100 μm diameter optical fiber with highprecision direct laser writing. Using axicons with apex angle 140º and rounded tip area as small as 10 μm diameter, we demonstrate 2-4 μm diameter focused laser 'needle' beams with approximately 20 μm propagation length generated from multimode diode laser with beam propagation parameter M2=18 and emission wavelength of 960 nm. This is a few-fold reduction compared to the minimal focal spot size of 11 μm that could be achieved if focused by an 'ideal' lens of unity numerical aperture. The same technique using a 160º axicon allowed us to demonstrate few-μm-wide laser 'needle' beams with nearly 100 μm propagation length with which to demonstrate optical trapping of 5-6 μm rat blood red cells in a water-heparin solution. Our results indicate the good potential of superfocused diode laser beams for applications relating to optical trapping and manipulation of microscopic objects including living biological objects with aspirations towards subsequent novel lab-on-chip configurations.