Nanocrystalline LaOCl:Tb3+/Sm3+ as promising phosphors for full-color field-emission displays

Nanocrystalline LaOCl:Tb3+/Sm3+ phosphors were synthesized by a Pechini-type sol-gel process. Under UV and electron-beam excitation, LaOCl:Tb3+/Sm3+ show the characteristic emission of Tb3+ (D-5(3,4) -> F-7(6), ... (2)) and Sm3+ ((4)G(5/2) -> H-6(5/2),(7/2),(9/2)), respectively. In particular, the cathodoluminescence (CL) color of LaOCl:Tb3+ can be tuned from blue to green by changing Tb3+-doped concentration, and their CL intensities (brightness) are higher than those of commercial products Y2SiO5:Ce3+ and ZnO:Zn, respectively. White CL can be realized by codoping with Tb3+ and Sm3+ in a single-phase LaOCl host. The obtained white light is very close to the standard white light. These phosphors are promising for application in field-emission displays.

Nanocrystalline LaAlO3:Sm3+ as a Promising Yellow Phosphor for Field Emission Displays

Nanocyrstalline LaAlO3:Sm3+ phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. XRD results reveal that the sample begins to crystallize at 600 degrees C, and pure LaAlO3 phase can be obtained at 700 degrees C. FE-SEM images indicate that the Sm3+-doped LaAlO3 phosphors are composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of UV light (245 nm) and low-voltage electron beams (1-3 kV), the Sm3+-doped LaAlO3 phosphors show the characteristic emissions of the Sm3+ ((4)G(5/2)-H-6(5/2), H-6(7/2), H-6(9/2) transitions) with a yellow color. The CL intensity (brightness) of the Sm3+-doped LaAlO3 phosphor is higher than that of the commercial product [Zn(Cd)S:Ag+] (yellow) to some extent.

Nanocrystalline LaGaO3 : Tm3+ as an efficient blue phosphor for field emission displays with high color purity

Nanocrystalline Tm3+-doped LaGaO3 phosphors were prepared through a Pechini-type sol-gel process [M. P. Pechini, U.S. Patent No. 3,330,697 (11 July 1967)]. X-ray diffraction, field emission scanning electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. Under the excitation of ultraviolet light and low voltage electron beams (0.5-3 kV), the Tm3+-doped LaGaO3 phosphors show the characteristic emissions from the LaGaO3 host lattice and the Tm3+ (D-1(2), (1)G(4)-F-3(4), and H-3(6) transitions), respectively. The blue CL of the Tm3+-doped LaGaO3 phosphors, with a dominant wavelength of 458 nm, had better Commission International I'Eclairage chromaticity coordinates (0.1552, 0.0630) and higher emission intensity than the commercial product (Y2SiO5:Ce3+).

Host-sensitized luminescence of Dy3+, Pr3+ , Tb3+ in polycrystalline CaIn2O4 for field emission displays

Caln(2)O(4):Dy3+/Pr3+/Tb3+ blue-white/green/green phosphors were prepared by the Pechini sol-gel process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), diffuse reflectance, photoluminescence (PL) and cathodoluminescencc (CL) spectra as well as lifetimes were utilized to characterize the samples. The XRD results reveal that the samples begin to crystallize at 800 degrees C 3-1 and pure CaIn2O4 phase can be obtained after annealing at 900 degrees C. The FE-SEM images indicate that the CaIn2O4:Dy3+, CaIn2O4:Pr3+ and CaIn2O4:Tb3+ samples consist of spherical grains with size around 200-400nm. Under the excitation of ultraviolet light and low electron beams (1-5kV), the CaIn2O4:Dy3+, CaIn2O4:Pr3+ and CaIn2O4:Tb3+ phosphors show the characteristic emissions of Dy3+ ((F9/2-H15/2)-F-4-H-6 and (F9/2-H13/2)-F-4-H-6 transitions, blue-white), Pr3+ ((P0-H4)-P-3-H-3, (D2-H4)-D-1-H-3 and (P1-H5)-P-3-H-3 transitions, green) and Tb3+ ((D4-F6,5,4,3)-D-5-F-7 transitions, green), respectively. All the luminescence is resulted from an efficient energy transfer from the CaIn2O4 host lattice to the doped Dy3+ ,Pr3+ and Tb3+ ions, and the corresponding luminescence mechanisms have been proposed.

Waveguide QED: Many-body bound-state effects in coherent and Fock-state scattering from a two-level system

Strong coupling between a two-level system (TLS) and bosonic modes produces dramatic quantum optics effects. We consider a one-dimensional continuum of bosons coupled to a single localized TLS, a system which may be realized in a variety of plasmonic, photonic, or electronic contexts. We present the exact many-body scattering eigenstate obtained by imposing open boundary conditions. Multiphoton bound states appear in the scattering of two or more photons due to the coupling between the photons and the TLS. Such bound states are shown to have a large effect on scattering of both Fock- and coherent-state wave packets, especially in the intermediate coupling-strength regime. We compare the statistics of the transmitted light with a coherent state having the same mean photon number: as the interaction strength increases, the one-photon probability is suppressed rapidly, and the two- and three-photon probabilities are greatly enhanced due to the many-body bound states. This results in non-Poissonian light. © 2010 The American Physical Society.

QUANTUM HALL FERROMAGNET IN A DOUBLE WELL WITH VANISHING g-FACTOR.

We have studied the quantum Hall effect in Al(x)Ga(1-x)As-double well structure with vanishing g-factor. We determined the density-magnetic field n(s) - B diagrams for the longitudinal resistance R(xx). In spite of the fact that the n(s) - B diagram for conventional GaAs double wells shows a striking similarity with the theory, we observed the strong difference between these diagrams for double wells with vanishing g-factor. We argue that the electron-electron interaction is responsible for unusual behavior of the Landau levels in such a system.

Al-based anodic oxide films structure observation using field emission gun scanning electron microscopy

In the present work, the anodic oxide films of Al, Al-Cu 4.5% and Al-Si 6.5% alloys are formed using direct and pulse current. In the case of Al-Cu and Al-Si alloys, the electrolyte used contains sulfuric acid and oxalic acid, meanwhile for Al the electrolyte contains sulfuric acid only. Al-Cu alloy was submitted to a heat treatment in order to decrease the effect of inter metallic phase theta upon the anodic film structure. Fractured samples were observed using a field emission gun scanning electron microscope JSM-6330F at (LME)/Brazilian Synchrotron Light Laboratory (LNLS), Campinas, SP, Brazil. The oxide film images enable evaluation of the pore size and form with a resolution similar to the transmission electron microscope (TEM) resolution. It is also observed that the anodizing process using pulse current produces an irregular structure of pore walls, and by direct cur-rent it is produced a rectilinear pore wall. (c) 2005 Elsevier B.V. All rights reserved.

Electron field emission from boron doped microcrystalline diamond

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N-B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E-th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm(-2) were obtained using electric fields less than 8 V/mu m. (c) 2007 Elsevier B.V. All rights reserved.

Präzisionsmessung des magnetischen Moments des Elektrons in wasserstoffähnlichem Kohlenstoff

In dieser Arbeit wird eine Messung des magnetischen Moments des Elektronsin wasserstoffähnlichem Kohlenstoff vorgestellt. Das Ergebnis derMessungen an einem einzelnen gespeicherten¹²C⁵⁺-Ionist: g = 2,001 041 596 4 (8)(6)(44). Der erste Fehler bezeichnet die statistischeUnsicherheit, der zweite Fehler die systematische Unsicherheit. Der letzteFehler resultiert aus der Unsicherheit des Verhältnisses der Massedes ¹²C⁵⁺-Ions und der des Elektrons. Die hohe Genauigkeitder Messung wurde durch die räumliche Trennung des Nachweises derAusrichtung des Spins und des Induzierens der spin-flips erreicht. DieMessung stellt die bisher genaueste Bestimmung eines atomaren g-Faktorsdar und bestätigt den theoretischen Wert der Göteborger Theoriegruppeauf 7*10^-9. Zusammen mit diesen Rechnungen verifiziert sie dieBound-State-QED-Korrekturen genauer als 1%. Somit ist der g-Faktor desin¹²C⁵⁺ gebunden Elektrons neben Messungen der Lambshiftin schweren hochgeladenen Ionen der genaueste Test der Bound-State-QED.
Wird auf die Richtigkeit der Berechnung des g-Faktors des gebundenenElektrons vertraut, kann folgender Wert für die atomare Masse desElektrons gewonnen werden: m_e= 0,000 548 579 912 8 (15) u.

Collimated Field Emission Beams from Metal Double-Gate Nanotip Arrays Optically Excited via Surface Plasmon Resonance

The generation of collimated electron beams from metal double-gate nanotip arrays excited by near infrared laser pulses is studied. Using electromagnetic and particle tracking simulations, we showed that electron pulses with small rms transverse velocities are efficiently produced from nanotip arrays by laser-induced field emission with the laser wavelength tuned to surface plasmon polariton resonance of the stacked double-gate structure. The result indicates the possibility of realizing a metal nanotip array cathode that outperforms state-of-the-art photocathodes.

Enhancement of field emission from multistage structure of carbon nanotube arrays

The field emission measurements for the multistage structured nanotubes (i.e., thin-multiwall and single wall carbon nanotubes grown on multiwall carbon nanotubes) were carried out and a low turn-on field of ~0.45 V/ μm, high emission current of 450 μA at a field of IV/μm and a large field enhancement factor of ~26200 were obtained. The thin multiwall carbon nanotubes (thin-MWNTs) and single wall carbon nanotubes (SWNTs) were grown on the regular arrays of vertically aligned multi wall carbon nanotubes (MWNTs) on porous silicon substrate by Chemical Vapor Deposition (CVD) method. The thin-MWNTs and SWNTs grown on MWNTs in this way have a multistage structure which gives higher enhancement of the electric field and hence the electron field emission.

Al-based anodic oxide films structure observation using field emission gun scanning electron microscopy

In the present work, the anodic oxide films of Al, Al-Cu 4.5% and Al-Si 6.5% alloys are formed using direct and pulse current. In the case of Al-Cu and Al-Si alloys, the electrolyte used contains sulfuric acid and oxalic acid, meanwhile for Al the electrolyte contains sulfuric acid only. Al-Cu alloy was submitted to a heat treatment in order to decrease the effect of inter metallic phase theta upon the anodic film structure. Fractured samples were observed using a field emission gun scanning electron microscope JSM-6330F at (LME)/Brazilian Synchrotron Light Laboratory (LNLS), Campinas, SP, Brazil. The oxide film images enable evaluation of the pore size and form with a resolution similar to the transmission electron microscope (TEM) resolution. It is also observed that the anodizing process using pulse current produces an irregular structure of pore walls, and by direct cur-rent it is produced a rectilinear pore wall. (c) 2005 Elsevier B.V. All rights reserved.

Enhancing field emission from a carbon nanotube array by lateral control of electrodynamic force field

Fluctuation of field emission current from carbon nanotubes (CNTs) poses certain difficulties for their use in nanobiomedical X-ray devices and imaging probes. This problem arises due to deformation of the CNTs due to electrodynamic force field and electron-phonon interaction. It is of great importance to have precise control of emitted electron beams very near the CNT tips. In this paper, a new array configuration with stacked array of CNTs is analysed and it is shown that the current density distribution is greatly localised at the middle of the array, that the scatter due to electrodynamic force field is minimised and that the temperature transients are much smaller compared to those in an array with random height distribution.