Coupled phonons, magnetic excitations, and ferroelectricity in AlFeO3: Raman and first-principles studies

We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 to 315 K covering a spectral range from 100 to 2200 cm(-1) and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering-induced phonon renormalization are evident in (1) anomalous temperature dependence of many modes with frequencies below 850 cm(-1), particularly near the magnetic transition temperature T-c approximate to 250 K, and (2) distinct changes in band positions of high-frequency Raman bands between 1100 and 1800 cm(-1); in particular, a broad mode near 1250 cm(-1) appears only below T-c, attributed to the two-magnon Raman scattering. We also observe weak anomalies in the mode frequencies similar to 100 K due to a magnetically driven ferroelectric phase transition. Understanding of these experimental observations has been possible on the basis of first-principles calculations of the phonons' spectrum and their coupling with spins.

Analysis of multi-conductor coupled microstrip lines with an aperture in the ground plane for the design of a broadband filter

Closed-form expressions for the propagation characteristics of coupled microstrip lines with a symmetrical aperture in the ground plane are derived. Expressions for the regular microstrip coupled lines have been modified using physical insights to incorporate the effect of the aperture. The accuracy of these expressions has been verified by full-wave simulations and compared with conformal mapping analysis. These expressions are accurate within 5% for a substrate whose thickness varies from 0.2 to 1.6mm and permittivity in the range of 210. Designing a broadband filter based on planar multi-conductor coupled lines with aperture in the ground plane is demonstrated in this paper using the proposed expressions for its practical use.

MEMS Tunable Optical Filter Based on Multi-Ring Resonator

We propose a novel MEMS tunable optical filter with a flat-top pass band based on multi-ring resonator in an electrostatically actuated microcantilever for communication application. The filter is basically structured on a microcantilever beam and built in optical integrated ring resonator which is placed in one end of the beam to gain maximum stress on the resonator. Thus, when a DC voltage is applied, the beam will bend, that induces a stress and strain in the ring, which brings a change in refractive index and perimeter of the rings leading to change in the output spectrum shift, providing the tenability as high as 0.68nm/mu N. and it is capable of tuning up to 1.7nm.

Analysis of a second-order polarization-independent filter made of a single ring resonator and a Sagnac interferometer

A novel second-order polarization-independent filter made of a single ring resonator and a Sagnac interferometer (SRRSI) is proposed, and its filtering characteristics are investigated. By using birefringence in waveguide, a single ring resonator can be used to synthesize a filter with second-order response. Analytical formulas are derived for characteristics of the SRRSI varied with waveguide parameters.. such as the coupling coefficient; and the critical condition of a second-order Butterworth filter is given. The influence of loss in the ring resonator is also analyzed. (c) 2005 Elsevier B.V. All rights reserved.

Voltage programmable dual-band bandpass/bandstop filter response in a single micro-electro-mechanical device

This paper reports on a switchable multi-band filter response achieved within a single micro-electro-mechanical device. A prototype device fabricated in a SOI process demonstrates a voltage programmable and tunable, dual-band, band-pass/band-stop response. Both analytical and finite element models are introduced in this paper to elucidate the operating principle of the filter and to guide filter design. Voltage programmability of the filter characteristic is demonstrated with the ability to independently tune the centre frequency and bandwidth for each band. A representative measurement shows that the minimum 3 dB-bandwidth (BW) is 155 Hz, 140Hz, and 20 dB-BW is 216 Hz, 203Hz for the upper-band and lower-band center frequencies located at 131.5 kHz and 130.7 kHz, respectively. © 2011 IEEE.