锯齿形板条抽运结构的热效应数值比较

激光二极管抽运的全固态激光器中,除了激光介质的温度分布和热透镜效应以外,抽运、冷却结构对获得高光束质量、高功率激光输出至关重要。基于热传导方程,在相同的抽运功率和传导冷却边界条件下,对单侧面抽运锯齿形(zigzag)板条、单侧面键合锯齿形板条、部分抽运板条三种不同抽运结构的温度分布、热致应力、温度导致的折射率变化进行了详细的分析,并通过光线追迹方法,比较了光束在锯齿形面内和垂直于锯齿形面内的光程差,由光程差曲线分析了激光束的热透镜效应。对三种抽运结构的端面温度、端面变形和端面变形导致的光程差也进行了对比分

All solid-state, injection-seeded Ti:sapphire ring laser

In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported. It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

Low-threshold diode-pumped Yb3+, Na+: CaF2 self-Q-switched laser

For the first time to our knowledge, the laser performance of Yb3+, Na+-codoped CaF2 single crystals was demonstrated. Self-Q-switched laser operation at 1050nm was observed for 976 nm diode pumping at room temperature. On 5 W of incident power, the repetition rate and width of the self-Q-switched pulses reached 28 kHz and 1.5 mu s, respectively. A maximal slope efficiency of 20.3% and minimal threshold absorbed pump power of 30 mW were respectively achieved with different output couplers, showing the promising application of Yb3+, Na+-codoped CaF2 crystals as compact and efficient solid-state lasers. (C) 2005 Optical Society of America.

Diode-pumped passively q-switched Nd : YAG ceramic laser with a Cr4+: YAG crystal-satiable absorber

Transparent polycrystalline Nd:YAG ceramics were fabricated by solid-state reactive sintering a mixture of commercial Al2O3,Y2O3, and Nd2O3 powders. The powders were mixed in ethanol and doped with 0.5 wt% tetraethoxysilane, dried, and pressed. Pressed samples were sintered at 1750 degrees C in vacuum. Transparent fully dense samples with average grain sizes of 10 mu m were obtained. The 1 at.% Nd:YAG ceramic was used to research passively Q-switched laser output with a Cr4+:YAG crystal as a saturable absorber. An average output power of 94 mW with a pulse width of 50 ns was obtained when the incident pump power was 750 mW. The slope efficiency was 13%. The pulse energy is 5 mu J, and the peak power is about 100 W.

Diode-pumped Yb : YAG ceramic laser

Transparent polycrystalline Yb:YAG ceramics were fabricated by solid-state reactive sintering a mixture of commercial Al2O3, Y2O3, and Yb2O3 powders. The powders were mixed in ethanol and doped with 0.5 wt% tetraethoxysilane, dried, and pressed. Pressed samples were sintered at 1730 degrees C in vacuum. Transparent fully dense samples with grain sizes of several micrometers were obtained. The phase from 1500 degrees to 1700 degrees C was important for the grain growth, in which the grains grew quickly and a mass of pores were eliminated from the body of the sample. Annealing was an important step to remove the vacancies of oxygen and transform Yb2+ to Yb3+. The 1 at.% Yb:YAG ceramic sample was pumped by a diode laser to study the laser properties. The maximum output power of 1.02 W was obtained with a slope efficiency of 25% at 1030 nm. The size of the lasering sample was 4 mm x 4 mm x 3 mm.

Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

Diode-pumped self-starting mode-locked Nd : YVO4 laser with semiconductor saturable absorber output coupler

By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3 ps were generated at the output power of about 1 W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44% and optical-to-optical conversion efficiency of 19%.

Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

A bulk crystal of Yb:Sc2SiO5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). The largest ground-state splitting of Yb3+ ions is up to 1027 cm(-1) in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.

End-pumped continuous-wave passively modelocked Nd : YVO4 laser with low pump power

A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.