Carbon nanotube based photocathodes for high frequency amplifiers

The combination of high frequency, high power, high efficiency capabilities is a feature of vacuum tube technology. For most of applications, large bandwidths are required, and therefore the modulation method should also allow large bandwidth operation. Optically modulated cold cathodes, avoiding the use of resonant cavities, should satisfy this requirement. This is the reason why we have developed carbon nanotube based photocathode.© 2009 IEEE.

Linear semiconductor optical amplifiers

The chapter reviews properties and applications of linear semiconductor optical amplifiers (SOA). Section 12.1 covers SOA basics, including working principles, material systems, structures and their growth. Booster or inline amplifiers as well as low-noise preamplifiers are classified. Section 12.2 discusses the influence of parameters like gain, noise figure, gain saturation, gain and phase dynamics, and alpha-factor. In Sect. 12.3, the application of a linear SOA as a reach extender in future access networks is addressed. The input power dynamic range is introduced, and measurements for on-off keying and phase shift keying signals are shown. Section 12.4 presents the state of the art for commercially available SOA and includes a treatment of reflective SOAs (RSOA) as well. © 2012 Springer-Verlag Berlin Heidelberg.

Monolithic MZI-SOA hybrid switch for low-power and low-penalty operation.

We report the first experimental demonstration of a monolithically integrated hybrid dilated 2×2 modular optical switch using Mach-Zehnder modulators as low-loss 1×2 switching elements and short semiconductor optical amplifiers to provide additional extinction and gain. An excellent 40 dB cross-talk/extinction ratio is recorded with data-modulated signal-to-noise ratios of up to 44 dB in a 0.1 nm bandwidth. A switching time of 3 ns is demonstrated. Bit error rate studies show extremely low subsystem penalties of less than 0.1 dB, and studies indicate that, by using this hybrid switch building block, an 8×8 port switch could be achieved with 14 dB input power dynamic range for subsystem penalties of less than 0.5 dB.

Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 rum at the bias current of 500 mA. The influences of them electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Low Power Integrated Circuits for Wireless Neural Recording Applications

A group of prototype integrated circuits are presented for a wireless neural recording micro-system. An inductive link was built for transcutaneous wireless power transfer and data transmission. Power and data were transmitted by a pair of coils on a same carrier frequency. The integrated receiver circuitry was composed of a full-wave bridge rectifier, a voltage regulator, a date recovery circuit, a clock recovery circuit and a power detector. The amplifiers were designed with a limited bandwidth for neural signals acquisition. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments. 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 MHz carrier within 10 mm. The total gain of 60 dB was obtained by the preamplifier and a main amplifier at 0.95Hz - 13.41 KHz with 0.215 mW power dissipation. The power consumption of the 100 MHz ASK transmitter is 0.374 mW. All the integrated circuits operated under a 3.3 V power supply except the voltage regulator.

Modeling and optimizing of high-concentration erbium-doped fiber amplifiers with consideration of ion-clusters

Starting from the modeling of isolated ions and ion-clusters, a closed form rate and power evolution equations for high-concentration erbium-doped fiber amplifiers are constructed. Based on the equations, the effects of the fraction of ion-clusters in total ions and the number of ions per cluster on the performance of high-concentration erbium-doped fiber amplifiers are analyzed numerically. The results show that the presence of the ion-clusters deteriorates amplifier performance, such as the signal power, signal gain, the threshold pump power for zero gain, saturated signal gain, and the maximum gain efficiency, etc. The optimum fiber length or other parameters should be modified with the ion-clusters being taken into account for the amplifiers to achieve a better performance. (c) 2007 Elsevier B.V. All rights reserved.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

All-optical signal processing using semiconductor optical amplifiers for next generation optical networks

This thesis details an experimental and simulation investigation of some novel all-optical signal processing techniques for future optical communication networks. These all-optical techniques include modulation format conversion, phase discrimination and clock recovery. The methods detailed in this thesis use the nonlinearities associated with semiconductor optical amplifiers (SOA) to manipulate signals in the optical domain. Chapter 1 provides an introduction into the work detailed in this thesis, discusses the increased demand for capacity in today’s optical fibre networks and finally explains why all-optical signal processing may be of interest for future optical networks. Chapter 2 discusses the relevant background information required to fully understand the all-optical techniques demonstrated in this thesis. Chapter 3 details some pump-probe measurement techniques used to calculate the gain and phase recovery times of a long SOA. A remarkably fast gain recovery is observed and the wavelength dependent nature of this recovery is investigated. Chapter 4 discusses the experimental demonstration of an all-optical modulation conversion technique which can convert on-off- keyed data into either duobinary or alternative mark inversion. In Chapter 5 a novel phase sensitive frequency conversion scheme capable of extracting the two orthogonal components of a quadrature phase modulated signal into two separate frequencies is demonstrated. Chapter 6 investigates a novel all-optical clock recovery technique for phase modulated optical orthogonal frequency division multiplexing superchannels and finally Chapter 7 provides a brief conclusion.

Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects

In this theoretical paper, the analysis of the effect that ON-state active-device resistance has on the performance of a Class-E tuned power amplifier using a shunt inductor topology is presented. The work is focused on the relatively unexplored area of design facilitation of Class-E tuned amplifiers where intrinsically low-output-capacitance monolithic microwave integrated circuit switching devices such as pseudomorphic high electron mobility transistors are used. In the paper, the switching voltage and current waveforms in the presence of ON-resistance are analyzed in order to provide insight into circuit properties such as RF output power, drain efficiency, and power-output capability. For a given amplifier specification, a design procedure is illustrated whereby it is possible to compute optimal circuit component values which account for prescribed switch resistance loss. Furthermore, insight into how ON-resistance affects transistor selection in terms of peak switch voltage and current requirements is described. Finally, a design example is given in order to validate the theoretical analysis against numerical simulation.

2.4 GHz Class-E power amplifier with transmissionline harmonic terminations

The design procedure, fabrication and measurement of a Class-E power amplifier with excellent second- and third-harmonic suppression levels are presented. A simplified design technique offering compact physical layout is proposed. With a 1.2 mm gate-width GaAs MESFET as a switching device, the amplifier is capable of delivering 19.2 dBm output power at 2.41 GHz, achieves peak PAE of 60% and drain efficiency of 69%, and exhibits 9 dB power gain when operated from a 3 V DC supply voltage. When compared to the classical Class-E two-harmonic termination amplifier, the Class-E amplifier employing three-harmonic terminations has more than 10% higher drain efficiency and 23 dB better third-harmonic suppression level. Experimental results are presented and good agreement with simulation is obtained. Further, to verify the practical implementation in communication systems, the Bluetooth-standard GFSK modulated signal is applied to both two- and three-harmonic amplifiers. The measured RMS FSK deviation error and RMS magnitude error were, for the three-harmonic case, 1.01 kHz and 0.122%, respectively, and, for the two-harmonic case, 1.09 kHz and 0.133%. © 2007 The Institution of Engineering and Technology.

Analysis of the effect of finite d.c. blocking capacitance and finite d.c. feed inductance on the performance of inverse class-E amplifiers

The first analysis and synthesis equations for the newly introduced inverse Class-E amplifier when operated with a finite d.c. blocking capacitance and a finite d.c.-feed inductance are presented in the paper. Closed-form design equations are derived in order to establish the circuit component values required for optimum synthesis. Excellent agreement between numerical simulation results and theoretical prediction is obtained. It is shown that drain efficiency approaching 100 at a pre-specified output power level can be achieved as zero-current switching and zero-current derivative conditions are simultaneously satisfied. The proposed analysis offers the prospect for realistic MMIC implementation.

Series-L/parallel-tuned comparison with shunt-C/series-tuned class-E power amplifier

An analysis of the operation of a series-L/parallel-tuned class-E amplifier and its equivalence to the classic shunt-C/series-tuned class-E amplifier are presented. The first reported closed form design equations for the series-L/parallel-tuned topology operating under ideal switching conditions are given. Furthermore, a design procedure is introduced that allows the effect that nonzero switch resistance has on amplifier performance efficiency to be accounted for. The technique developed allows optimal circuit components to be found for a given device series resistance. For a relatively high value of switching device ON series resistance of 4O, drain efficiency of around 66% for the series-L/parallel-tuned topology, and 73% for the shunt-C/series-tuned topology appear to be the theoretical limits. At lower switching device series resistance levels, the efficiency performance of each type are similar, but the series-L/parallel-tuned topology offers some advantages in terms of its potential for MMIC realisation. Theoretical analysis is confirmed by numerical simulation for a 500mW (27dBm), 10% bandwidth, 5 V series-L/parallel-tuned, then, shunt-C/series-tuned class E power amplifier, operating at 2.5 GHz, and excellent agreement between theory and simulation results is achieved. The theoretical work presented in the paper should facilitate the design of high-efficiency switched amplifiers at frequencies commensurate with the needs of modern mobile wireless applications in the microwave frequency range, where intrinsically low-output-capacitance MMIC switching devices such as pHEMTs are to be used.

Analysis of the Second Harmonic Effect on Power Amplifier Intermodulation Products

A theoretical analysis is reported in this paper to investigate the effect that a second harmonic signal which might be present at an amplifier’s input has on generating additional intermodulation products, particularly the third-order intermodulation (IM3) products. The analysis shows that the amplitude of an extra generated IM3 component is equal to the product of the fundamental amplitude, the second harmonic amplitude, and the second order Taylor series coefficient. The effect of the second order harmonic on the IM3 is examined through a simulated example of a 2.22-GHz 10-W Class-EF amplifier whereby the IM3 levels have been reduced by 2-3 dB after employing a second harmonic termination stub at the input.

All-optical processing systems based on semiconductor optical amplifiers

Nesta tese investigam-se e desenvolvem-se dispositivos para processamento integralmente óptico em redes com multiplexagem densa por divisão no comprimento de onda (DWDM). O principal objectivo das redes DWDM é transportar e distribuir um espectro óptico densamente multiplexado com sinais de débito binário ultra elevado, ao longo de centenas ou milhares de quilómetros de fibra óptica. Estes sinais devem ser transportados e encaminhados no domínio óptico de forma transparente, sem conversões óptico-eléctrico-ópticas (OEO), evitando as suas limitações e custos. A tecnologia baseada em amplificadores ópticos de semicondutor (SOA) é promissora graças aos seus efeitos não-lineares ultra-rápidos e eficientes, ao potencial para integração, reduzido consumo de potência e custos. Conversores de comprimento de onda são o elemento óptico básico para aumentar a capacidade da rede e evitar o bloqueio de comprimentos de onda. Neste trabalho, são estudados e analisados experimentalmente métodos para aumentar a largura de banda operacional de conversores de modulação cruzada de ganho (XGM), a fim de permitir a operação do SOA para além das suas limitações físicas. Conversão de um comprimento de onda, e conversão simultânea de múltiplos comprimentos de onda são testadas, usando interferómetros de Mach-Zehnder com SOA. As redes DWDM de alto débito binário requerem formatos de modulação optimizados, com elevada tolerância aos efeitos nefastos da fibra, e reduzida ocupação espectral. Para esse efeito, é vital desenvolver conversores integramente ópticos de formatos de modulação, a fim de permitir a interligação entre as redes já instaladas, que operam com modulação de intensidade, e as redes modernas, que utilizam formatos de modulação avançados. No âmbito deste trabalho é proposto um conversor integralmente óptico de formato entre modulação óptica de banda lateral dupla e modulação óptica de banda lateral residual; este é caracterizado através de simulação e experimentalmente. Adicionalmente, é proposto um conversor para formato de portadora suprimida, através de XGM e modulação cruzada de fase. A interligação entre as redes de transporte com débito binário ultra-elevado e as redes de acesso com débito binário reduzido requer conversão óptica de formato de impulso entre retorno-a-zero (RZ) e não-RZ. São aqui propostas e investigadas duas estruturas distintas: uma baseada em filtragem desalinhada do sinal convertido por XGM; uma segunda utiliza as dinâmicas do laser interno de um SOA com ganho limitado (GC-SOA). Regeneração integralmente óptica é essencial para reduzir os custos das redes. Dois esquemas distintos são utilizados para regeneração: uma estrutura baseada em MZI-SOA, e um método no qual o laser interno de um GC-SOA é modulado com o sinal distorcido a regenerar. A maioria dos esquemas referidos é testada experimentalmente a 40 Gb/s, com potencial para aplicação a débitos binários superiores, demonstrado que os SOA são uma tecnologia basilar para as redes ópticas do futuro.