Enhanced dielectric response of ZrO2 upon Ti doping and introduction of O vacancies

We determine the electronic properties and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and Ti doping using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis. We find significantly enhanced static dielectric response in zirconia with Ti doping and introduction of oxygen vacancies. Softening of phonon modes are responsible for the enhanced dielectric response of doped samples compared to pure zirconia.

Influence of sintering conditions and doping on the dielectric relaxation originating from the surface layer effects in CaCu3Ti4O12 ceramics

Detailed investigations into the dielectric dispersion phenomenon in the giant dielectric constant material CaCu3Ti4O12 (CCTO) around room temperature revealed the existence of two successive dielectric relaxations. In the temperature domain, a new dielectric relaxation was clearly observed around 250K, in addition to the well-investigated dielectric relaxation close to 100K. The effect of sintering and doping (La3+) on the strength of these dielectric relaxations were studied in detail. The sintering temperature as well as its duration was found to have tremendous influence on the dielectric relaxation that was encountered around 250 K. This Maxwell-Wagner (M-W) type of relaxation was found to be originating from the surface layer containing the Cu-rich phase, which was ascribed to the difference in the oxygen content between the surface and the interior of the sample. Interestingly, this particular additional relaxation was not observed in La2/3Cu3Ti4O12, a low dielectric constant member of the CCTO family, in which the segregation of Cu-rich phase on the surface was absent. Indeed the correlation between the new relaxation and the presence of Cu-rich phase in CCTO ceramics was further corroborated by the absence of the same after removing the top and bottom layers. (C) 2007 Elsevier Ltd. All rights reserved.

The effect of pressure and W-doping on the properties of ZnO thin films for NO2 gas sensing

Pure and W-doped ZnO thin films were obtained using magnetron sputtering at working pressures of 0.4 Pa and 1.33 Pa. The films were deposited on glass and alumina substrates at room temperature and subsequently annealed at 400oC for 1 hour in air. The effects of pressure and W-doping on the structure, chemical, optical and electronic properties of the ZnO films for gas sensing were examined. From AFM, the doped film deposited at higher pressure (1.33 Pa) has spiky morphology with much lower grain density and porosity compared to the doped film deposited at 0.4 Pa. The average gain size and roughness of the annealed films were estimated to be 65 nm and 2.2 nm, respectively with slightly larger grain size and roughness appeared in the doped films. From XPS the films deposited at 1.33 Pa favored the formation of adsorbed oxygen on the film surface and this has been more pronounced in the doped film which created active sites for OH adsorption. As a consequence the W-doped film deposited at 1.33 Pa was found to have lower oxidation state of W (35.1 eV) than the doped film deposited at 0.4 Pa (35.9 eV). Raman spectra indicated that doping modified the properties of the ZnO film and induced free-carrier defects. The transmittance of the samples also reveals an enhanced free-carrier density in the W-doped films. The refractive index of the pure film was also found to increase from 1.7 to 2.2 after W-doping whereas the optical band gap only slightly increased. The W-doped ZnO film deposited at 0.4 Pa appeared to have favorable properties for enhanced gas sensing. This film showed significantly higher sensing performance towards 5-10 ppm NO2 at lower operating temperature of 150oC most dominantly due to increased free-carrier defects achieved by W-doping.

Theory of the unusual doping and temperature dependence of photoemission spectra in manganites

A recent, major, puzzle in the core-level photoemission spectra of doped manganites is the observation of a 1–2 eV wide shoulder with intensity varying with temperature T as the square of the magnetization over a T scale of order 200 K, an order of magnitude less than electronic energies. This is addressed and resolved here, by extending a recently proposed two-fluid polaron–mobile electron model for these systems to include core-hole effects. The position of the shoulder is found to be determined by Coulomb and Jahn-Teller energies, while its spectral weight is determined by the mobile electron energetics which is strongly T and doping dependent, due to annealed disorder scattering from the polarons and the t2g core spins. Our theory accounts quantitatively for the observed T dependence of the difference spectra, and furthermore, explains the observed correspondence between spectral changes due to increasing doping and decreasing T.

Thermal properties of MOSi2 with minor aluminum substitutions

Mo(Si1-xAlx)(2) compositions (x = 0-0.1) have been prepared by a modified SHS route under uniaxial hydrostatic pressure. Oxidation studies carried out by thermal analysis and sheet resistivity indicate an improvement in the low temperature (700-900 K) oxidation resistance with increasing aluminum addition. Dilatometric results show a decrease in the a value up to x = 0.05 substitution. With the aluminum substitution, both thermal expansion coefficient and thermal conductivity show decrease in their values except in the biphasic region. The x = 0.05 composition containing both C11(b) and C40 phases is a promising material for high temperature thermal barrier coating as it shows higher oxidation resistance and a similar K/alpha value as compared to pure MoSi, (c) 2006 Elsevier Ltd. All rights reserved.

Optimization of friction stir welding parameters for dissimilar aluminum alloys

Assembly consisting of cast and wrought aluminum alloys has wide spread application in defense and aero space industries. For the efficacious use of the transition joints, the weld should have adequate strength and formability. In the present investigation, A356 and 6061 aluminum alloys were friction stir welded under tool rotational speed of 1000-1400 rpm and traversing speed of 80-240 mm/min, keeping other parameters same. The variable process window is responsible for the change in total heat input and cooling rate during welding. Structural characterization of the bonded assemblies exhibits recovery-recrystallization in the stirring zone and breaking of coarse eutectic network of Al-Si. Dispersion of fine Si rich particles, refinement of 6061 grain size, low residual stress level and high defect density within weld nugget contribute towards the improvement in bond strength. Lower will be the tool rotational and traversing speed, more dominant will be the above phenomena. Therefore, the joint fabricated using lowest tool traversing and rotational speed, exhibits substantial improvement in bond strength (similar to 98% of that of 6061 alloy), which is also maximum with respect to others. (C) 2010 Elsevier Ltd. All rights reserved.

Steroids and related natural products. VII. Boron trifluoride etherate-lithium aluminum hydride reduction of smilagenin acetate

Reduction of smilagenin acetate (Va) using a boron trifluoride etherate-lithium aluminum hydride reagent, followed by hydrogen peroxide oxidation and acetylation, was found to yield: 3β-ethoxysmilagenin (Vb), 3β-ethoxydihydrosmilagenin acetate (VIa), dihydrosmilagenin diacetate (VIb), and a complex mixture of partially acetylated products. Similar reaction conditions were employed to convert dihydrodiosgenin (II) to dihydrochlorogenin (III). Boron trifluoride etherate-lithium aluminum hydride reduction of 3β-acetoxy-5α-cholestane and 3β-acetoxy-5α-lanostane (VIIIa) was shown to yield the corresponding 3β-ethoxy (e.g., VIIIb) derivatives.

Dry sliding wear behavior of Al2O3 fiber reinforced aluminum composites

Dry sliding wear behavior of die-cast ADC12 aluminum alloy composites reinforced with short alumina fibers were investigated by using a pin-on-disk wear tester. The Al2O3 fibers were 4 mu m in diameter and were present in volume fractions (T-f)ranging from 0.03 to 0.26, The length of the fiber varied from 40 to 200 mu m. Disks of aluminum-alumina composites were rubbed against a pin of nitrided stainless steel SUS440B with a load of 10 N at a sliding velocity of 0.1 m/s. The unreinforced ADC 12 aluminum alloy and their composites containing low volume fractions of alumina (V-f approximate to 0.05) showed a sliding-distance-dependent transition from severe to mild wear. However, composites containing high volume fractions of alumina ( V-f > 0.05) exhibited only mild wear for all sliding distances. The duration of occurrence of the severe wear regime and the wear rate both decrease with increasing volume fraction. In MMCs the wear rate in the mild wear regime decreases with increase in volume fraction: reaching a minimum value at V-f = 0.09 Beyond V-f = 0.09 the wear rate increasesmarginally. On the other hand, the wear rate of the counterface (steel pin) was found to increase moderately with increase in V-f. From the analysis of wear data and detailed examination of (a) worn surfaces, (b) their cross-sections and (c) wear debris, two modes of wear mechanisms have been identified to be operative, in these materials and these are: (i) adhesive wear in the case of unreinforced matrix material and in MMCs with low Vf and (ii) abrasive wear in the case of MMCs with high V-f. (C) 2000 Elsevier Science Ltd. All rights reserved.

An elastic-viscoplastic constitutive model for the hot-forming of aluminum alloys

Under hot-forming conditions characterized by high homologous temperatures and strain-rates, metals usually exhibit rate-dependent inelastic behavior. An elastic-viscoplastic constitutive model is presented here to describe metal behavior during hot-forming. The model uses an isotropic internal variable to represent the resistance offered to plastic deformation by the microstructure. Evolution equations are developed for the inelastic strain and the deformation resistance based on experimental results. A methodology is presented for extracting model parameters from constant true strain-rate compression tests performed at different temperatures. Model parameters are determined for an Al-1Mn alloy and an Al-Mg-Si alloy, and the predictions of the model are shown to be in good agreement with the experimental data. (C) 2000 Kluwer Academic Publishers.

Role of aluminum-magnesium alloys in humid aging of composite solid propellants

The humid aging of composite propellants containing a terpolymer of polybutadiene, acrylic acid, and acrylonitrile (PBAN) as a binder has been studied as a function of aging temperature, relative humidity, and aging time. Three composite types - AP-PBAN, AP-Al-PBAN, and AP-(Al-Mg) alloy- PBAN - have been studied. The burning rates of all three propellant types were unaffected by aging. The calorimetric values of composites containing aluminum-magnesium alloy decreased on aging, and the lattice parameter of the alloy decreased to a value close to that of aluminum. Water absorption in all of the samples increased with increases in the temperature, relative humidity, and aging time. The compression strength of the nonmetalized and aluminized samples decreased on aging, whereas that of the composites containing the alloy increased. The latter effect has been traced to reaction of residual carboxyl groups on the polymer chains with magnesium, leading to cross-linking. The reaction between the -COOH groups and magnesium has been proved using infrared spectroscopy. (Author)

Search for new transparent conductors: Effect of Ge doping on the conductivity of Ga2O3, In2O3 and Ga1.4In0.6O3

Only a small amount (<= 3.5 mol%) of Ge can be doped in Ga2O3, Ga1.4In0.6O3 and In2O3 by means of solid state reactions at 1400 degrees C. All these samples are optically transparent in the visible range, but Ge-doped Ga2O3 and Ga1.4In0.6O3 are insulating. Only Ge-doped In2O3 exhibits a significant decrease in resistivity, the resistivity decreasing further on thermal quenching and H-2 reduction.The resistivity of 2.7% Ge-doped In2O3 after H-2 reduction shows a metallic behavior, and a resistivity of similar to 1 m Omega cm at room temperature, comparable to that of Sn-doped In2O3. (C) 2010 Elsevier Ltd. All rights reserved.

XPS evidence for molecular charge-transfer doping of graphene

By employing X-ray photoelectron spectroscopy (XPS), we have been able to establish the occurrence of charge-transfer doping in few-layer graphene covered with electron acceptor (TCNE) and donor (TTF) molecules. We have performed quantitative estimates of the extent of charge transfer in these complexes and elucidated the origin of unusual shifts of their Raman G-bands and explained the differences in the dependence of conductivity on n- and p-doping. The study unravels the cause of the apparent difference between the charge-transfer doping and electrochemical doping. (C) 2010 Elsevier B.V. All rights reserved.