Stochastic resonance in quantum-well semiconductor lasers

The quantum well (QW) semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics. In order to improve the quality of direct-modulation by means of the stochastic resonance (SR) mechanism in QW semiconductor lasers, we investigate the behaviour of the SR in direct-modulated QW semiconductor laser systems. Considering the cross-correlated carrier noise and photon noise, we calculate the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated laser system by using the linear approximation method. The results indicate that the SR always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Intensity pulsations in distributed feedback Yb:Phosphate waveguide lasers

The intensity pulsations of a cw 1030 nm Yb:Phosphate monolithic waveguide laser with distributed feedback are described. We show that the pulsations could result from the coupling of the two orthogonal polarization modes through the two photon process of cooperative luminescence. The predictions of the presented theoretical model agree well with the observed behaviour.

Dynamics of free-running, pump-modulated and coupled semiconductor and solid-state lasers

The output of a laser is a high frequency propagating electromagnetic field with superior coherence and brightness compared to that emitted by thermal sources. A multitude of different types of lasers exist, which also translates into large differences in the properties of their output. Moreover, the characteristics of the electromagnetic field emitted by a laser can be influenced from the outside, e.g., by injecting an external optical field or by optical feedback. In the case of free-running solitary class-B lasers, such as semiconductor and Nd:YVO4 solid-state lasers, the phase space is two-dimensional, the dynamical variables being the population inversion and the amplitude of the electromagnetic field. The two-dimensional structure of the phase space means that no complex dynamics can be found. If a class-B laser is perturbed from its steady state, then the steady state is restored after a short transient. However, as discussed in part (i) of this Thesis, the static properties of class-B lasers, as well as their artificially or noise induced dynamics around the steady state, can be experimentally studied in order to gain insight on laser behaviour, and to determine model parameters that are not known ab initio. In this Thesis particular attention is given to the linewidth enhancement factor, which describes the coupling between the gain and the refractive index in the active material. A highly desirable attribute of an oscillator is stability, both in frequency and amplitude. Nowadays, however, instabilities in coupled lasers have become an active area of research motivated not only by the interesting complex nonlinear dynamics but also by potential applications. In part (ii) of this Thesis the complex dynamics of unidirectionally coupled, i.e., optically injected, class-B lasers is investigated. An injected optical field increases the dimensionality of the phase space to three by turning the phase of the electromagnetic field into an important variable. This has a radical effect on laser behaviour, since very complex dynamics, including chaos, can be found in a nonlinear system with three degrees of freedom. The output of the injected laser can be controlled in experiments by varying the injection rate and the frequency of the injected light. In this Thesis the dynamics of unidirectionally coupled semiconductor and Nd:YVO4 solid-state lasers is studied numerically and experimentally.

Low Threshold Quantum Dot Lasers

Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam.

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

A semi-gas kinetics (SGK) model for performance analyses of flowing chemical oxygen-iodine laser (COIL) is presented. In this model, the oxygen-iodine reaction gas flow is treated as a continuous medium, and the effect of thermal motions of particles of different laser energy levels on the performances of the COIL is included and the velocity distribution function equations are solved by using the double-parameter perturbational method. For a premixed flow, effects of different chemical reaction systems, different gain saturation models and temperature, pressure, yield of excited oxygen, iodine concentration and frequency-shift on the performances of the COIL are computed, and the calculated output power agrees well with the experimental data. The results indicate that the power extraction of the SGK model considering 21 reactions is close to those when only the reversible pumping reaction is considered, while different gain saturation models and adjustable parameters greatly affect the output power, the optimal threshold gain range, and the length of power extraction.

One-dimensional improvement and two-dimensional and 3-dimensional treatments for stable oscillation condition, mode structure and power output in high-speed-flow lasers

For high-speed-flow lasers, the one-dimensional and first-order approximate treatment in[1] under approximation of geometrical optics is improved still within the scope of approx-imation of geometrical optics. The strict accurate results are obtained, and what is more,two- and three-dimensional treatments are done. Thus for two- and three-dimensional cases, thestable oscillation condition, the formulae of power output and analytical expression of modesunder approximation of geometrical optics (in terms of gain function) are derived. Accord-ing to the present theory, one-and two-dimensional calculations for the typical case of Gerry'sexperiment are presented. All the results coincide well with the experiment and are better thanthe results obtained in [1].In addition, the applicable scope of Lee's stable oscillation condition given by [1] is ex-panded; the condition for the approximation of gcometrical optics to be applied to mode con-structure in optical cavity is obtained for the first time and the difference between thiscondition and that for free space is also pointed out in the present work.

1.55-mu m InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with lnGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 mum. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does. (C) 2004 Elsevier Ltd. All rights reserved.

Mode competition in acousto-optically Q-switched planar waveguide lasers

Multi-mode rate equations have been developed to investigate mode competition in high-power acousto-optically Q-switched planar waveguide lasers. The mode competition arises from coupling effects and temporal losses in the transform between guided modes and free-space propagation. Pulse-to-pulse instability and temporal beam distortions are enlarged by mode competition when the laser works in the multi-mode regime. The influence of parasitic oscillation is also discussed. A Nd:YAG planar waveguide laser has been established with a folded hybrid/unstable resonator. A maximum average power of 83 W with a beam propagation factor M-x(2) x M-y(2) = 1.2 x 1.4 is obtained. The theoretical simulation agrees well with the experimental observation. (c) 2006 Elsevier Ltd. All rights reserved.

Avaliação da indução de lesões no DNA por lasers terapêuticos de baixa potência

Na medicina regenerativa há uma crescente utilização de lasers de baixa intensidade em protocolos terapêuticos para tratamento de doenças em tecidos moles e no tecido ósseo. Lasers emitem feixes de luz com características específicas, nas quais o comprimento de onda, a frequência, potência e modo de missão são propriedades determinantes para as respostas fotofísica, fotoquímica e fotobiológica. Entretanto, sugere-se que lasers de baixa potência induzem a produção de radicais livres, que podem reagir com biomoléculas importantes, como o DNA. Essas reações podem causar lesões e induzir mecanismos de reparo do DNA para preservar a integridade do código genético e homeostase celular. Portanto, o objetivo deste trabalho foi avaliar lesões no DNA de células do sangue periférico de ratos Wistar e a expressão dos genes ERCC1 e ERCC2 em tecidos biológicos expostos a lasers de baixa intensidade em comprimentos de onda, fluências, potências e modos de emissão utilizados em protocolos terapêuticos. Para tal, amostras de sangue periférico foram expostas ao laser vermelho (660 nm) e infravermelho (808 nm) em diferentes fluências, potências e modos de emissão, e a indução de lesões no DNA foi avaliada através do ensaio cometa. Em outros experimentos, lesões no DNA foram analisadas através do ensaio cometa modificado, utilizando as enzimas de reparo: formamidopirimidina DNA glicosilase (FPG) e endonuclease III. Pele e músculo de ratos Wistar foram expostos aos lasers e amostras desses tecidos foram retiradas para extração de RNA, síntese de cDNA e avaliação da expressão dos genes por PCR quantitativo em tempo real. Os dados obtidos neste estudo sugeriram que a exposição aos lasers induz lesões no DNA dependendo da fluência, potência e modo de emissão, e que essas lesões são alvos da FPG e endonuclease III. A expressão relativa do RNAm de ERCC1 e de ERCC2 foi alterada nos tecidos expostos dependendo do comprimento de onda e fluência utilizada. Os resultados obtidos neste estudo sugerem que danos oxidativos no DNA poderiam ser considerados para segurança do paciente e eficácia terapêutica, bem como alterações na expressão dos genes de reparo do DNA participariam dos efeitos de bioestimulação que justificam as aplicações terapêutica de lasers de baixa potência.

1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study

Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-μm wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AIGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

Post-processing of vertical-cavity surface-emitting lasers for transverse mode and polarization control

The operation on how high quality single-mode operation can be readily attained on etching circles in multimode devices is discussed. Arrays of such spots can also be envisaged. Control of the polarization state is also achieved by use of deep line etches. The output filaments and beam shapes of the conventional multimode vertical cavity surface emitting lasers (VCSEL) is shown to be engineered in terms of their positions, widths, and polarizations by use of focused ion beam etching (FIBE). Several GaAs quantum well top-emitting devices with cavity diameters of 10 μm and 18 μm were investigated.