Financial assistance for purchase of large fishing vessels

The Government of Sri Lanka is improving off-shore and deep-shore fishing by introducing more sophisticated and larger vessels into the Sri Lanka waters, together with the offer of subsidies, tax holidays and other concessions to those who seek to operate such fishing vessels. As a first step, some thirty 38 foot class fishing vessels are to be introduced. The requisite variety and quantity of fishing gear is supplied together with the vessels, and operators will be given further assistance to either export or market their catches locally by provision of insulated fish transport vans, jeeps with trailers, crushed ice plants, fish storage cabinets and adequate spares for at least the next few years. A description is given of the credit terms offered for the purchase of such vessels, pre-shipment finance, and loans and hire purchase facilities.

Promising practices in food security and nutrition assistance to vulnerable households in the Tonle Sap Region, Cambodia

The CGIAR Research Program on Aquatic Agricultural Systems (AAS) seeks to reduce poverty and improve food security for many small-scale fishers and farmers who are dependent on aquatic agriculture systems by partnering with local, national and international partners to achieve large-scale development impact. This study on promising practices in food security and nutrition assistance to vulnerable households in the Tonle Sap region forms part of the preliminary research that informs AAS work in the highly productive Mekong Delta and Tonle Sap Lake floodplain. The study aims to identify and learn from promising practices that have had a positive impact on the food security and nutrition of vulnerable households in the Tonle Sap region.

Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.