Structural and electrical properties of ZnO varistors containing different spinel phases

Structural and electrical properties of ZnO varistors were investigated as a function of spinel composition. Six varistor mixtures differing only in chemical composition of spinel, were prepared by mixing separately synthesized constituent phases (DSCP method). Compositions of constituent phases in sintered samples were investigated by changes of lattice parameters of the phases, as well as by EDS analysis of the constituent phases. It was found that compositions of ZnO, intergranular and spinel phases were partially changed during sintering due to redistribution of additives, that was controlled by starting spinel composition and its stability. Electrical characterization showed significant difference in electrical properties of investigated varistors: nonlinearity coefficients ranging from 22 to 55 and leakage currents differing by the order of magnitude. Activation energies of conduction were obtained from ac impedance spectroscopy measurements. Calculated values of activation energies were in the range 0.61-1.0 eV confirming difference in defect structure of ZnO grain boundaries in varistors containing different spinel phases. (C) 2001 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Nonlinear properties and stability of SnO2 varistors prepared by evaporation and decomposition of suspensions

SnO2 varistors doped with CoO, Cr2O3 and Nb2O5 were prepared by evaporation and decomposition of suspensions. The composition of the varistors was optimized to improve electrical properties, such as nonlinearity, leakage current and electrical stability. The best results were achieved with the following composition: 99.15% SnO2 +0.75% CoO+0.05% Cr2O3 +0.05% Nb2O5. Samples showed high density, reaching 99.5% of the theoretical density, as well as an homogeneous microstructure. The nonlinear coefficient was higher than 30 in the current range from 10(-7) to 10(-2) A/cm(2). The leakage current was 0.86 mu A/cm(2). These samples showed high stability of electrical parameters when they were exposed to high current of 27 mA/cm(2) for different time periods up to 30 min. (c) 2005 Elsevier Ltd. All rights reserved.

Admittance and dielectric spectroscopy of polycrystalline semiconductors

This text discusses about advantageous, powerful and limitations of admittance and dielectric spectroscopy in the characterization of polycrystalline semiconductors. In the context of polycrystalline semiconductors or dielectric materials, the admittance or dielectric frequency response analyses are shown to be sometimes more useful than impedance spectra analysis, mainly because information on the capacitances or deep trap states are possible to be monitored from admittance or dielectric spectra as a function of dopant concentration or annealing effects. The majority of examples of the application of admittance or dielectric analysis approach were here based on SnO2- and ZnO-based polycrystalline semiconductors devices presenting nonohmic properties. Examples of how to perform the characterization of Schottky barrier in such devices are clearly depicted. The approach is based on findings of the true Mott-Schottky pattern of the barrier by extracting the grain boundary capacitance value from complex capacitance diagram analysis. The equivalent circuit of such kind of devices is mainly consistent with the existence of three parallel elements: the high-frequency limit related to grain boundary capacitances, the complex incremental capacitance at intermediate frequency related to the deep trap relaxation and finally at low frequency region the manifestation of the conductance term representing the dc conductance of the multi-junction device. (c) 2007 Elsevier Ltd. All rights reserved.

Synthesis of SnO2 by chemical routes and its use in varistors production

Tin oxide, SnO2. is a very used compound in industry and one of its uses is as varistor. For the current requirements of the technology is necessary a strict control of the chemical purity and the particle size of the raw material; for that reason the great interest that exists at the moment to develop synthesis methods that allow to get these requirements. In this work, ceramic powders of the Sn-Co-Nb-Ti-Al system using the controlled precipitation and polymeric precursor (Pechini) methods were synthesized. The raw material obtained was characterized using X-ray diffraction (XRD), thermal analysis (DTA/FG) and scanning electron microscopy (SEM). The sintering samples shown a good varistor behavior with non-linear coefficient (alpha) values similar to 22, and Er 2083 V/cm(2). (c) 2007 Elsevier Ltd. All rights reserved.

The influence of aluminium on the overall properties of SnO2-based varistors

The influence of aluminium on the development of the microstructure and on the electrical behaviour of the SnO2 center dot Co3O4 center dot Nb2O5 typical varistor system was studied. Two sources of Al were used, alumina (Al2O3) and boehmite (AlO(OH)). The microstructural features were characterised with scanning (SEM) and transmission (TEM) electron microscopies. The different phases present in the studied samples were also studied with XRD, EDS and electron diffraction patterns of selected areas (SAED). Particles containing Sri, Co, Al, and O were unveiled with TEM. Impedance spectroscopy measurements and current density versus electric field characteristics revealed superior electrical properties for samples with AlO(OH). The higher non-linearity (alpha = 19) was achieved with the addition of 0.1% mol of boehmite. The influence of the secondary phases on the electrical properties is also addressed in this work.

PROCESSING AND CHARACTERIZATION OF LOW-VOLTAGE VARISTORS

ZnO seed particles and Cr2O3 were used in this study to control the microstructure of ZnO varistors. The seed particles were prepared by adding 1.0 mol % BaO to ZnO. The powder was then calcined at 800-degrees-C for 2 h, pressed into pellets and sintered at 1400-degrees-C for 8 h. The sintered ZnO was ground and the BaO eliminated by washing in water. The remaining ZnO powder was classified into a size fraction ranging from 38 to 149 mum. The addition of a small amount (1 weight %) ZnO seed grains produces varistors with low breakdown voltages (7.6 V/mm) and an alpha coefficient of approximately 10. The addition of Cr2O3 stabilizes the spinel phase yielding a more homogeneous microstructure, but degraded electrical behaviour of the ZnO varistor.

Thermal conductivity features of ZnO-based varistors using the laser-pulse method

The thermal conductivity of several commercial ZnO-based varistor systems was determined based on the laser-pulse method, a technique that proved extremely useful and easy to apply. Using this technique, the thermal conductivity was found to be dependent on the microstructural features of the devices, involving the mean grain size and phase composition. Among the phases existing in commercial ZnO-based varistors, ZniSb2O12 and Bi2O3 were found to contribute strongly to the thermal conductivity of the devices. (C) 2003 Elsevier B.V. All rights reserved.

Structural and microstructural behaviour of SnO2 dense ceramics doped with ZnO and WO3

SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration. (c) 2005 Elsevier B.V. All rights reserved.

Influence of the oxygen adsorbed on tin varistors doped with Co, Mn and Cr oxides

The non-ohmic properties of the 98.90% SnO2+(1-x)%CoO+0.05% Cr2O3+0.05% Nb2O5+x% MnO2 varistor system (all of them in mol %), as well as the influence of the oxidizing and reducing atmosphere on this system were studied in this work. Experimental evidence indicates that the electrical properties of the varistor depend on the defects that occur at the grain boundary and on the adsorbed oxygen species such as O''(2), O'(2), O in this region. Thermal treatments at 900 degreesC in oxygen and nitrogen atmospheres indicated such a dependence with the values of the non-linearity coefficient (alpha) increasing under oxygen atmosphere, being reduced in nitrogen atmosphere and restored after a new treatment in oxygen atmosphere, presenting a reversibility in the process. EDS analysis accomplished by SEM showed the distribution of the oxides in the varistor matrix. (C) 2002 Kluwer Academic Publishers.

Effect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors

ZnO has the characteristic of presenting an intermediate value for the effective 3 eV barrier at room temperature. ZnO ceramics are applied in high-voltage systems or circuits. Attempts were made to reduce the number of effective barriers in the system by adding large particles of ZnO to the varistor composition. This procedure reduced the breakdown field of the varistors by values up to 90% lower than those initially obtained, and produced nonlinear coefficients as low as 20. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Nonlinear characteristics of Cr2O3, WO3, ZnO and CoO doped SnO2 varistors

SnO2 based ceramics doped with 1.0 mol% ZnO, 1.0 mol% CoO, 0.1 mol% WO3 and 0.05 mol% Cr2O3 show varistor behavior with nonlinear coefficient alpha = 33, breakdown electric field E-B = 12.5 kV/cm, leakage current I = 0.63 mA/cm(2) and average grain size of 1.52 mu m. Experimental evidence shows that the addition of Cr2O3 improves the nonlinear properties of the samples significantly, the impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the samples doped with Cr2O3. (C) 2005 Elsevier B.V. All rights reserved.

Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy

This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.

Rietveld refinements of SnO(2) ceramic powders doped with ZnO, WO(3), CoO, Nb(2)O(5) and MoO(3)

Polycrystalline materials of SnO(2) doped with ZnO, WO(3), CoO, Nb(2)O(5), and MoO(3). were synthesized by solid state reaction. X-ray powder diffraction data were collected with Cu K(alpha) radiation from a Rigaku-Rint 2000 rotating anode source. The structural and profile parameters were refined by the Rietveld method using GSAS [2]. The obtained residual parameters are R(wp) = 11,93% and R(Bragg) = 4,19%. The refined profile parameters indicate no anisotropic crystallite microstrain. The refinement results and Fourier differences calculations indicate that the dopants do not occupy interstitial sites in the crystal structure of SnO(2).

The failure analyses on ZnO varistors used in high tension devices

The main purpose of this work is to evaluate the failure caused by electrical discharge on commercial ZnO varistor doped with oxide of Bi, Sb, Si, Cr, Co utilized in electric transmission systems. In order to observe the effect of electrical discharge over the microstructure and electrical properties of the varistors, two kinds of pulses were applied: long pulse (2000 ms) and short pulse (8/20 mu s). In both cases, a decrease in grain size and increase in micropores and leakage current were observed. The degraded samples present oxygen defficiency mainly in the grain boundary and phase tranformation from the bismuth oxide phase. (c) 2005 Springer Science+ Business Media, Inc.

Nonlinear behavior of TiO2 center dot Ta2O5 center dot MnO2 material doped with BaO and Bi2O3

A study was made on the effect of the addition of BaO (0.025-0.05 mol%) and Bi2O3 (0.025-0.05 mol%) to the TiO2.Ta2O5.MnO2 material. The samples were characterized by X-ray diffraction, and current-voltage measurements were accomplished for determination of the nonlinear coefficient. An analysis was made to evaluate the microstructural characteristics of the materials. The most appropriate sintering conditions for the materials were analyzed with the purpose of obtaining the best nonlinear coefficient associated with the smallest breakdown electric field. After sintering at 1400 degreesC for 2 h, a low-voltage (30 V cm(-1)) varistor was obtained, which, however, presented a low nonlinear coefficient (6). It was found that the sintering conditions must be controlled in order to improve the electrical properties of these materials. (C) 2004 Elsevier B.V. All rights reserved.