Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique

The dependence of the electronic energy levels on the size of quantum dots (QDs) with the shape of spherical lens is studied by using the B-spline technique for the first time. Within the framework of the effective-mass theory, the values of electronic energy levels are obtained as a function of the height, radius and volume of QDs, respectively. When the height or radius of QDs increases, all the electronic energy levels lower, and the separations between the energy levels decrease. For lens-shape QDs, height is the key factor in dominating the energy levels comparing with the effect of radius, especially in dominating the ground-state level. These computational results are compared with that of other theoretical calculation ways. The B-spline technique is proved to be an effective way in calculating the electronic structure in QDs with the shape of spherical lens.

One-dimensional quantum waveguide theory of Rashba electrons

The ballistic spin transport in one-dimensional waveguides with the Rashba effect is studied. Due to the Rashba effect, there are two electron states with different wave vectors for the same energy. The wave functions of two Rashba electron states are derived, and it is found that their phase depend on the direction of the circuit and the spin directions of two states are perpendicular to the circuit, with the +pi/2 and -pi/2 angles, respectively. The boundary conditions of the wave functions and their derivatives at the intersection of circuits are given, which can be used to investigate the waveguide transport properties of Rashba spin electron in circuits of any shape and structure. The eigenstates of the closed circular and square loops are studied by using the transfer matrix method. The transfer matrix M(E) of a circular arc is obtained by dividing the circular arc into N segments and multiplying the transfer matrix of each straight segment. The energies of eigenstates in the closed loop are obtained by solving the equation det[M(E)-I]=0. For the circular ring, the eigenenergies obtained with this method are in agreement with those obtained by solving the Schrodinger equation. For the square loop, the analytic formula of the eigenenergies is obtained first The transport properties of the AB ring and AB square loop and double square loop are studied using the boundary conditions and the transfer matrix method In the case of no magnetic field, the zero points of the reflection coefficients are just the energies of eigenstates in closed loops. In the case of magnetic field, the transmission and reflection coefficients all oscillate with the magnetic field; the oscillating period is Phi(m)=hc/e, independent of the shape of the loop, and Phi(m) is the magnetic flux through the loop. For the double loop the oscillating period is Phi(m)=hc/2e, in agreement with the experimental result. At last, we compared our method with Koga's experiment. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253752]

Electronic transport through self-assembled quantum disks

In this paper we study a single electron tunneling through a vertically stacked self-assembled quantum disks structure using a transfer matrix technique in the framework of effective mass approximation. In the disks, the electron is confined both laterally and vertically; we separate the motion in the vertical and lateral directions within the adiabatic approximation and treat the energy levels of the latter as an effective confining potential. The influence of a constant applied electric field is taken into account using an exact Airy-function formalism and the current density is calculated at zero temperature. By increasing the widths of the barriers, we find the peaks of the current density shift toward lower voltage region; meanwhile, they can become even sharper. (C) 2004 Elsevier Ltd. All rights reserved.

Research progress of electronic properties of self-assembled semiconductor quantum dots

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. In the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed.

Application of plane wave method to the calculation of electronic states of nano-structures

The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15(n), respectively, for n-dimensional nano-structures (n = 1,2,3). Our proposals can be widely applied in the design of various nano-structure devices.

Resonant tunneling theory of planar quantum dot structures

The ballistic transport in the semiconductor, planar, circular quantum dot structures is studied theoretically. The transmission probabilities show apparent resonant tunneling peaks, which correspond to energies of bound states in the dot. By use of structures with different angles between the inject and exit channels, the resonant peaks can be identified very effectively. The perpendicular magnetic field has obvious effect on the energies of bound states in the quantum dot, and thus the resonant peaks. The treatment of the boundary conditions simplifies the problem to the solution of a set of linear algebraic equations. The theoretical results in this paper can be used to design planar resonant tunneling devices, whose resonant peaks are adjustable by the angle between the inject and exit channels and the applied magnetic field. The resonant tunneling in the circular dot structures can also be used to study the bound states in the absence and presence of magnetic field.

Self-consistent calculation of electronic states in asymmetric double barrier structure

With contributions from both three-dimensional (3D) electrons in heavily doped contacts and 2D electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and that in the central well of an asymmetric double barrier structure (DBS). By choosing the thickness of the incident barrier properly, it is revealed that these two quasi-bound levels may merge into a unique bound level in the off-resonance regime which shows a very good 2D nature in contrast to the conventional picture for level crossing. An evident intrinsic I-V bistability is also shown. It is noticeable that the effect of charge build-up in the central well is so strong that the electric field in the incident barrier even decreases when the applied bias increases within the resonant region.

From Tunneling to Hopping: A Comprehensive Investigation of Charge Transport Mechanism in Molecular Junctions Based on Oligo(p-phenylene ethynylene)s

The charge transport mechanism of oligo(p-phenylene ethynylene)s with lengths ranging from 0.98 to 5.11 nm was investigated using modified scanning tunneling microscopy break junction and conducting probe atomic force microscopy methods. The methods were based on observing the length dependence of molecular resistance at single molecule level and the current-voltage characteristics in a wide length distribution. An intrinsic transition from tunneling to hopping charge transport mechanism was observed near 2.75 nm. A new transitional zone was observed in the long length molecular wires compared to short ones. This was not a simple transition between direct tunneling and field emission, which may provide new insights into transport mechanism investigations. Theoretical calculations provided an essential explanation for these phenomena in terms of molecular electronic structures.

Predicting the frequency dispersion of electronic hyperpolarizabilities on the basis of absorption data and thomas-kuhn sum rules

Successfully predicting the frequency dispersion of electronic hyperpolarizabilities is an unresolved challenge in materials science and electronic structure theory. We show that the generalized Thomas-Kuhn sum rules, combined with linear absorption data and measured hyperpolarizability at one or two frequencies, may be used to predict the entire frequency-dependent electronic hyperpolarizability spectrum. This treatment includes two- and three-level contributions that arise from the lowest two or three excited electronic state manifolds, enabling us to describe the unusual observed frequency dispersion of the dynamic hyperpolarizability in high oscillator strength M-PZn chromophores, where (porphinato)zinc(II) (PZn) and metal(II)polypyridyl (M) units are connected via an ethyne unit that aligns the high oscillator strength transition dipoles of these components in a head-to-tail arrangement. We show that some of these structures can possess very similar linear absorption spectra yet manifest dramatically different frequency dependent hyperpolarizabilities, because of three-level contributions that result from excited state-to excited state transition dipoles among charge polarized states. Importantly, this approach provides a quantitative scheme to use linear optical absorption spectra and very limited individual hyperpolarizability measurements to predict the entire frequency-dependent nonlinear optical response. Copyright © 2010 American Chemical Society.

A theory of hypoellipticity and unique ergodicity for semilinear stochastic PDEs

We present a theory of hypoellipticity and unique ergodicity for semilinear parabolic stochastic PDEs with "polynomial" nonlinearities and additive noise, considered as abstract evolution equations in some Hilbert space. It is shown that if Hörmander's bracket condition holds at every point of this Hilbert space, then a lower bound on the Malliavin covariance operatorμt can be obtained. Informally, this bound can be read as "Fix any finite-dimensional projection on a subspace of sufficiently regular functions. Then the eigenfunctions of μt with small eigenvalues have only a very small component in the image of Π." We also show how to use a priori bounds on the solutions to the equation to obtain good control on the dependency of the bounds on the Malliavin matrix on the initial condition. These bounds are sufficient in many cases to obtain the asymptotic strong Feller property introduced in [HM06]. One of the main novel technical tools is an almost sure bound from below on the size of "Wiener polynomials," where the coefficients are possibly non-adapted stochastic processes satisfying a Lips chitz condition. By exploiting the polynomial structure of the equations, this result can be used to replace Norris' lemma, which is unavailable in the present context. We conclude by showing that the two-dimensional stochastic Navier-Stokes equations and a large class of reaction-diffusion equations fit the framework of our theory.

Theory of the near K-edge structure in electron energy loss spectroscopy

Arguments are given that lead to a formalism for calculating near K-edge structure in electron energy loss spectroscopy (EELS). This is essentially a one electron picture, while many body effects may be introduced at different levels, such as the local density approximation to density functional theory or the GW approximation to the electron self-energy. Calculations are made within the all electron LMTO scheme in crystals with complex atomic and electronic structures, and these are compared with experiment. (c) 2004 Elsevier B.V. All rights reserved.

Non-linear electronic transport in Pt nanowires deposited by focused ion beam

Electrical transport and structural properties of platinum nanowires, deposited using the focussed ion beam method have been investigated. Energy dispersive X-ray spectroscopy reveals metal-rich grains (atomic composition 31% Pt and 50% Ga) in a largely non-metallic matrix of C, O and Si. Resistivity measurements (15-300 K) reveal a negative temperature coefficient with the room-temperature resistivity 80-300 times higher than that of bulk Pt. Temperature dependent current-voltage characteristics exhibit non-linear behaviour in the entire range investigated. The conductance spectra indicate increasing non-linearity with decreasing temperature, reaching 4% at 15 K. The observed electrical behaviour is explained in terms of a model for inter-grain tunnelling in disordered media, a mechanism that is consistent with the strongly disordered nature of the nanowires observed in the structure and composition analysis.

Electro-thermal theory of intermodulation distortion in lossy microwave components

An analytic formulation of dynamic electro-thermally induced nonlinearity is developed for a general resistive element, yielding a self-heating circuit model based on a fractional derivative. The model explains the 10 dB/decade slope of the intermodulation products observed in two-tone testing. Two-tone testing at 400 MHz of attenuators, microwave chip terminations, and coaxial terminations is reported with tone spacing ranging from 1 to 100 Hz.

Theory of phonon dissipation in the conduction of stressed Au nanowires

Recent experiments on Au break junctions [Phys. Rev. Lett. 88 (2002) 216803] have characterized the nonlinear conductance of stretched short Au nanowires. They reveal in the voltage range 10-20 meV the signatures of dissipation effects, likely due to phonons in the nanowire, reducing the conductance below the quantized value of 2e(2)/h. We present here a theory, based on a model tight-binding Hamiltonian and on non-equilibrium Green's function techniques, which accounts for the main features of the experiment. The theory helps in revealing details of the experiment which need to be addressed with a more realistic, less idealized, theoretical framework. (C) 2004 Elsevier B.V. All rights reserved.