993 resultados para Strong light
Resumo:
We apply a scattering theory of nonperturbative quantum electrodynamics to study the photoelectron angular distributions (PADs) of a hydrogen atom irradiated by linearly polarized laser light. The calculated PADs show main lobes and jetlike structure. Previous experimental studies reveal that in a set of above-threshold-ionization peaks when the absorbed-photon number increases by one, the jet number also increases by one. Our study confirms this experimental observation. Our calculations further predict that in some cases three more jets may appear with just one-more-photon absorption. With consideration of laser-frequency change, one less jet may also appear with one-more-photon absorption. The jetlike structure of PADs is due to the maxima of generalized phased Bessel functions, not an indication of the quantum number of photoelectron angular momentum states.
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An analytical fluid model for vacuum heating during the oblique incidence by an ultrashort ultraintense p-polarized laser on a solid-density plasma is proposed. The steepening of an originally smooth electron density profile as the electrons are pushed inward by the laser is included self-consistently. It is shown that the electrons being pulled out and then returned to the plasma at the interface layer by the wave field can lead to a phenomenon like wave breaking since the front part of the returning electrons always move slower than the trailing part. This can lead to heating of the plasma at the expense of the wave energy. An estimate for the efficiency of laser energy absorption by the vacuum heating is given. It is also found that for the incident laser intensity parameter, a(L)> 0.5, the absorption rate peaks at an incident angle 45 degrees-52 degrees and it reaches a maximum of 30% at a(L)approximate to 1.5.
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We have observed strong scattering of a probe light by dilute Bose-Einstein condensate (BEC) Rb-87 gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.
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We discuss coupling of ultrashort light pulses into waveguides by use of a prism waveguide coupler configuration. Theoretical analysis indicates that an extra loss induced by the short coherence times of ultrashort pulses, which has a strong effect on the reflected light and the optimum coupling condition, appears in the waveguide. Numerical simulations show that the reflectance strongly depends on the coherence times of ultrashort pulses. A method for realizing optimum coupling by compensating for the extra loss is proposed as well in this paper. A preliminary experiment of employing ultrashort pulses with different coherence times was carried out, and good agreement between theory and experiment was obtained. (c) 2006 Optical Society of America.
Resumo:
Three kinds of metal(II) tetraazaporphyrin complexes with blue-violet and red light wavelength absorption were synthesized by refluxing tetraazaporphyrin ligand and different metal(II) ions, respectively. Their structures were confirmed by elemental analysis, LDI-TOF-MS, FT-IR and UV-Vis. The solubility of metal(II) tetraazaporphyrin complexes in organic solvents and absorption properties of their chloroform solution and films on K9 glass in the region 250-800 nm were measured. The influence on the difference of absorption maximum from metal(II) tetraazaporphyrin complexes to tetraazaporphyrin ligand by different metal(II) ions was studied. In addition, the thermal stability of the complexes was also evaluated. (c) 2006 Elsevier Ltd. All rights reserved.
Resumo:
Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.
Resumo:
Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.
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We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.
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We present experimental measurements on Silicon-on-insulator (SOI) photonic crystal slabs with an active layer containing Er3+ ions-doped Silicon nanoclusters (Si-nc), showing strong enhancement of 1.54 μm emission at room temperature. We provide a systematic theoretical analysis to interpret such results. In order to get further insight, we discuss experimental data on the guided luminescence of unpatterned SOI planar slot waveguides, which show enhanced light emission in transverse-magnetic (TM) modes over transverse-electric (TE) ones. ©2007 IEEE.
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Cyanobacteria perform photosynthesis and respiration in the thylakoid membrane, suggesting that the two processes are interlinked. However, the role of the respiratory electron transfer chain under natural environmental conditions has not been established. Through targeted gene disruption, mutants of Synechocystis sp. PCC 6803 were generated that lacked combinations of the three terminal oxidases: the thylakoid membrane-localized cytochrome c oxidase (COX) and quinol oxidase (Cyd) and the cytoplasmic membrane-localized alternative respiratory terminal oxidase. All strains demonstrated similar growth under continuous moderate or high light or 12-h moderate-light/dark square-wave cycles. However, under 12-h high-light/dark square-wave cycles, the COX/Cyd mutant displayed impaired growth and was completely photobleached after approximately 2 d. In contrast, use of sinusoidal light/dark cycles to simulate natural diurnal conditions resulted in little photobleaching, although growth was slower. Under high-light/dark square-wave cycles, the COX/Cyd mutant suffered a significant loss of photosynthetic efficiency during dark periods, a greater level of oxidative stress, and reduced glycogen degradation compared with the wild type. The mutant was susceptible to photoinhibition under pulsing but not constant light. These findings confirm a role for thylakoid-localized terminal oxidases in efficient dark respiration, reduction of oxidative stress, and accommodation of sudden light changes, demonstrating the strong selective pressure to maintain linked photosynthetic and respiratory electron chains within the thylakoid membrane. To our knowledge, this study is the first to report a phenotypic difference in growth between terminal oxidase mutants and wild-type cells and highlights the need to examine mutant phenotypes under a range of conditions.
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We demonstrate the on-chip nanoscale focusing of surface plasmons in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip. Enhancing light matter interactions is discussed. © 2012 OSA.
Resumo:
We investigate numerically and experimentally the on-chip nanoscale focusing of surface plasmon polaritons (SPPs) in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip. © 2011 IEEE.
Resumo:
We demonstrate the on-chip nanoscale focusing of surface plasmons in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip. Enhancing light matter interactions is discussed. © 2011 Optical Society of America.
Resumo:
We investigate numerically and experimentally the on-chip nanoscale focusing of surface plasmon polaritons (SPPs) in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip. © 2010 Optical Society of America.
Resumo:
A silicon-on-insulator (SOI) optical fiber-to-waveguide spot-size converter (SSC) overlaid with specially treated silica is investigated for integrated optical circuits. Unlike the conventional process of simply depositing the hot silica on silicon waveguides, two successive layers of silicon dioxide were grown on etched SSC structures by PECVD (plasma-enhanced chemical vapor deposition). The two layers have 0.8% index contrast and supply stronger cladding for an incident light beam. Additionally, this process is able to reduce the effective refractive index of the input mode to less than 1.47 (extremely close to that of the fiber), substantially weakening the unwanted back reflection. Exploiting this technology, it was demonstrated that the SSC showed a theoretical low mode mismatch loss of 1.23 dB for a TE-like mode and has an experimental coupling efficiency of 66%.