A methodology for granularity-based control of parallelism in logic programs

Several types of parallelism can be exploited in logic programs while preserving correctness and efficiency, i.e. ensuring that the parallel execution obtains the same results as the sequential one and the amount of work performed is not greater. However, such results do not take into account a number of overheads which appear in practice, such as process creation and scheduling, which can induce a slow-down, or, at least, limit speedup, if they are not controlled in some way. This paper describes a methodology whereby the granularity of parallel tasks, i.e. the work available under them, is efficiently estimated and used to limit parallelism so that the effect of such overheads is controlled. The run-time overhead associated with the approach is usually quite small, since as much work is done at compile time as possible. Also,a number of run-time optimizations are proposed. Moreover, a static analysis of the overhead associated with the granularity control process is performed in order to decide its convenience. The performance improvements resulting from the incorporation of grain size control are shown to be quite good, specially for systems with medium to large parallel execution overheads.

User-definable resource bounds analysis for logic programs

We present a static analysis that infers both upper and lower bounds on the usage that a logic program makes of a set of user-definable resources. The inferred bounds will in general be functions of input data sizes. A resource in our approach is a quite general, user-defined notion which associates a basic cost function with elementary operations. The analysis then derives the related (upper- and lower-bound) resource usage functions for all predicates in the program. We also present an assertion language which is used to define both such resources and resourcerelated properties that the system can then check based on the results of the analysis. We have performed some preliminary experiments with some concrete resources such as execution steps, bytes sent or received by an application, number of files left open, number of accesses to a datábase, number of calis to a procedure, number of asserts/retracts, etc. Applications of our analysis include resource consumption verification and debugging (including for mobile code), resource control in parallel/distributed computing, and resource-oriented specialization.

A framework for assertion-based debugging in constraint logic programming

We propose a general framework for assertion-based debugging of constraint logic programs. Assertions are linguistic constructions which allow expressing properties of programs. We define assertion schemas which allow writing (partial) specifications for constraint logic programs using quite general properties, including user-defined programs. The framework is aimed at detecting deviations of the program behavior (symptoms) with respect to the given assertions, either at compile-time or run-time. We provide techniques for using information from global analysis both to detect at compile-time assertions which do not hold in at least one of the possible executions (i.e., static symptoms) and assertions which hold for all possible executions (i.e., statically proved assertions). We also provide program transformations which introduce tests in the program for checking at run-time those assertions whose status cannot be determined at compile-time. Both the static and the dynamic checking are provably safe in the sense that all errors flagged are definite violations of the specifications. Finally, we report on an implemented instance of the assertion language and framework.

Towards granularity based control of parallelism in logic programs

Several types of parallelism can be exploited in logic programs while preserving correctness and efficiency, i.e. ensuring that the parallel execution obtains the same results as the sequential one and the amount of work performed is not greater. However, such results do not take into account a number of overheads which appear in practice, such as process creation and scheduling, which can induce a slow-down, or, at least, limit speedup, if they are not controlled in some way. This paper describes a methodology whereby the granularity of parallel tasks, i.e. the work available under them, is efficiently estimated and used to limit parallelism so that the effect of such overheads is controlled. The run-time overhead associated with the approach is usually quite small, since as much work is done at compile time as possible. Also, a number of run-time optimizations are proposed. Moreover, a static analysis of the overhead associated with the granularity control process is performed in order to decide its convenience. The performance improvements resulting from the incorporation of grain size control are shown to be quite good, specially for systems with médium to large parallel execution overheads.

Estimating the computational cost of logic programs

Information about the computational cost of programs is potentially useful for a variety of purposes, including selecting among different algorithms, guiding program transformations, in granularity control and mapping decisions in parallelizing compilers, and query optimization in deductive databases. Cost analysis of logic programs is complicated by nondeterminism: on the one hand, procedures can return múltiple Solutions, making it necessary to estímate the number of solutions in order to give nontrivial upper bound cost estimates; on the other hand, the possibility of failure has to be taken into account while estimating lower bounds. Here we discuss techniques to address these problems to some extent.

Strange attractor in optical logic cells

Optical logic cells, employed in several tasks as optical computing or optically controlled switches for photonic switching, offer a very particular behavior when the working conditions are slightly modified. One of the more striking changes occurs when some delayed feedback is applied between one of the possible output gates and a control input. Some of these new phenomena have been studied by us and reported in previous papers. A chaotic behavior is one of the more characteristic results and its possible applications range from communications to cryptography. But the main problem related with this behavior is the binary character of the resulting signal. Most of the nowadays-employed techniques to analyze chaotic signals concern to analogue signals where algebraic equations are possible to obtain. There are no specific tools to study digital chaotic signals. Some methods have been proposed. One of the more used is equivalent to the phase diagram in analogue chaos. The binary signal is converted to hexadecimal and then analyzed. We represented the fractal characteristics of the signal. It has the characteristics of a strange attractor and gives more information than the obtained from previous methods. A phase diagram, as the one obtained by previous techniques, may fully cover its surface with the trajectories and almost no information may be obtained from it. Now, this new method offers the evolution around just a certain area being this lines the strange attractor.

Logic cells as basic structures to add/drop WDM information signals

Nowadays, in order to take advantage of fiber optic bandwidth, any optical communications system tends to be WDM. The way to extract a channel, characterized by a wavelength, from the optical fiber is to filter the specific wavelength. This gives the systems a low degree of freedom due to the fact of the static character of most of the employed devices. In this paper we will present a different way to extract channels from an optical fiber with WDM transmission. The employed method is based on an Optically Programmable Logic Cells (OPLC) previously published by us, for other applications as a chaotic generator or as basic element for optical computing. In this paper we will describe the configuration of the OPLC to be employed as a dropping device. It acts as a filter because it will extract the data carried by a concrete wavelength. It does depend, internally, on the wavelength. We will show how the intensity of the signal is able to select the chosen information from the line. It will be also demonstrated that a new idea of redundant information it is the way of selecting the concrete wavelength. As a matter of fact this idea is apparently the only way to use the OPLC as a dropping device. Moreover, based on these concepts, a similar way to route signals to different routes is reported. The basis is the use of photonic switching configurations, namely Batcher or Bayan structures, where the unit switching cells are the above indicated OPLCs.

Sophisticated security verification on routing repaired balanced cell-based dual-rail logic against side channel analysis

Conventional dual-rail precharge logic suffers from difficult implementations of dual-rail structure for obtaining strict compensation between the counterpart rails. As a light-weight and high-speed dual-rail style, balanced cell-based dual-rail logic (BCDL) uses synchronised compound gates with global precharge signal to provide high resistance against differential power or electromagnetic analyses. BCDL can be realised from generic field programmable gate array (FPGA) design flows with constraints. However, routings still exist as concerns because of the deficient flexibility on routing control, which unfavourably results in bias between complementary nets in security-sensitive parts. In this article, based on a routing repair technique, novel verifications towards routing effect are presented. An 8 bit simplified advanced encryption processing (AES)-co-processor is executed that is constructed on block random access memory (RAM)-based BCDL in Xilinx Virtex-5 FPGAs. Since imbalanced routing are major defects in BCDL, the authors can rule out other influences and fairly quantify the security variants. A series of asymptotic correlation electromagnetic (EM) analyses are launched towards a group of circuits with consecutive routing schemes to be able to verify routing impact on side channel analyses. After repairing the non-identical routings, Mutual information analyses are executed to further validate the concrete security increase obtained from identical routing pairs in BCDL.

NOR network transduction procedures : "merging of gates" and "substitution of gates" for fan-in and fan-out restricted networks, NETTRA-G3-FIFO and NETTRA-PG1-FIFO /

"December 1974."--T.p.

Results of the synthesis of optimal networks of AND and OR gates for four-variable switching functions by a branch-and-bound computer program /

Bibliography: p. 39 (2d group)

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Hard thermal loops in static external fields

We examine, in the imaginary-time formalism, the high temperature behavior of n-point thermal loops in static Yang-Mills and gravitational fields. We show that in this regime, any hard thermal loop gives the same leading contribution as the one obtained by evaluating the loop integral at zero external energies and momenta.

ACUTE EFFECT OF A BALLISTIC AND A STATIC STRETCHING EXERCISE BOUT ON FLEXIBILITY AND MAXIMAL STRENGTH

Bacurau, RFP, Monteiro, GA, Ugrinowitsch C, Tricoli, V, Cabral, LF, Aoki, MS. Acute effect of a ballistic and a static stretching exercise bout on flexibility and maximal strength. J Strength Cond Res 23(1): 304-308, 2009-Different stretching techniques have been used during warm-up routines. However, these routines may decrease force production. The purpose of this study was to compare the acute effect of a ballistic and a static stretching protocol on lower-limb maximal strength. Fourteen physically active women (169.3 +/- 8.2 cm; 64.9 +/- 5.9 kg; 23.1 +/- 3.6 years) performed three experimental sessions: a control session (estimation of 45 degrees leg press one-repetition maximum [1RM]), a ballistic session (20 minutes of ballistic stretch and 45 degrees leg press 1RM), and a static session (20 minutes of static stretch and 45 degrees leg press 1RM). Maximal strength decreased after static stretching (213.2 +/- 36.1 to 184.6 +/- 28.9 kg), but it was unaffected by ballistic stretching (208.4 +/- 34.8 kg). In addition, static stretching exercises produce a greater acute improvement in flexibility compared with ballistic stretching exercises. Consequently, static stretching may not be recommended before athletic events or physical activities that require high levels of force. On the other hand, ballistic stretching could be more appropriate because it seems less likely to decrease maximal strength.

Is acute static stretching able to reduce the time to exhaustion at power output corresponding to maximal oxygen uptake?

Samogin Lopes, FA, Menegon, EM, Franchini, E, Tricoli, V, and de M. Bertuzzi, RC. Is acute static stretching able to reduce the time to exhaustion at power output corresponding to maximal oxygen uptake? J Strength Cond Res 24(6): 1650-1656, 2010-This study analyzed the effect of an acute static stretching bout on the time to exhaustion (T(lim)) at power output corresponding to (V) over dotO(2)max. Eleven physically active male subjects (age 22.3 +/- 2.8 years, (V) over dotO(2)max 2.7 +/- 0.5 L . min(-1)) completed an incremental cycle ergometer test, 2 muscle strength tests, and 2 maximal tests to exhaustion at power output corresponding to (V) over dotO(2)max with and without a previous static stretching bout. The T(lim) was not significantly affected by the static stretching (164 +/- 28 vs. 150 +/- 26 seconds with and without stretching, respectively, p = 0.09), but the time to reach (V) over dotO(2)max (118 +/- 22 vs. 102 +/- 25 seconds), blood-lactate accumulation immediately after exercise (10.7 +/- 2.9 vs. 8.0 +/- 1.7 mmol . L(-1)), and oxygen deficit (2.4 +/- 0.9 vs. 2.1 +/- 0.7 L) were significantly reduced (p <= 0.02). Thus, an acute static stretching bout did not reduce T(lim) at power output corresponding to (V) over dotO(2)max possibly by accelerating aerobic metabolism activation at the beginning of exercise. These results suggest that coaches and practitioners involved with aerobic dependent activities may use static stretching as part of their warm-up routines without fear of diminishing high-intensity aerobic exercise performance.