Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Micro-inverter for integrated grid-tie PV module using resonant controller

Two-stage isolated converters for photovoltaic (PV) applications commonly employ a high-frequency transformer on the DC-DC side, submitting the DC-AC inverter switches to high voltages and forcing the use of IGBTs instead of low-voltage and low-loss MOSFETs. This paper shows the modeling, control and simulation of a single-phase full-bridge inverter with high-frequency transformer (HFT) that can be used as part of a two-stage converter with transformerless DC-DC side or as a single-stage converter (simple DC-AC inverter) for grid-connected PV applications. The inverter is modeled in order to obtain a small-signal transfer function used to design the PResonant current control regulator. A high-frequency step-up transformer results in reduced voltage switches and better efficiency compared with converters in which the transformer is used on the DC-DC side. Simulations and experimental results with a 200 W prototype are shown. © 2012 IEEE.

Utilização de sinais adicionais estabilizantes para o amortecimento de oscilações de baixa frequência do sistema elétrico de potência multimáquinas

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Preparação e caracterização de filmes finos de 'BA''BI IND.2''TA IND.2''O IND.9(BBT)' e 'BA''BI IND.2''NB IND.2''O IND.9(BBN)'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Micro-inverter for integrated grid-tie photovoltaic module using resonant controller

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Search for standard model production of four top quarks in the lepton plus jets channel in pp collisions at root S=8 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Microinversor integrado ao módulo fotovoltaico para sistemas conectados à rede elétrica utilizando controlador ressonante

This paper shows the modeling and control of a single-phase full-bridge inverter with high-frequency transformer that may be used as part of a two-stage converter with transformerless DC-DC side or as a single-stage converter (simple DC-AC converter) for grid-connected PV applications. The inverter is modeled in order to obtain a small-signal transfer function used to design the P+Resonant current controller. A highfrequency step-up transformer results in reduced voltage switches and better efficiency compared with converters in which the transformer is used on the DC-DC side. Simulations and experimental results with a 200 W prototype are shown. 1

Reduced-order modelling, circuit-level design and SOI fabrication of microelectromechanical resonators

This thesis deals with two important research aspects concerning radio frequency (RF) microresonators and switches. First, a new approach for compact modeling and simulation of these devices is presented. Then, a combined process flow for their simultaneous fabrication on a SOI substrate is proposed. Compact models for microresonators and switches are extracted by applying mathematical model order reduction (MOR) to the devices finite element (FE) description in ANSYS c° . The behaviour of these devices includes forms of nonlinearities. However, an approximation in the creation of the FE model is introduced, which enables the use of linear model order reduction. Microresonators are modeled with the introduction of transducer elements, which allow for direct coupling of the electrical and mechanical domain. The coupled system element matrices are linearized around an operating point and reduced. The resulting macromodel is valid for small signal analysis around the bias point, such as harmonic pre-stressed analysis. This is extremely useful for characterizing the frequency response of resonators. Compact modelling of switches preserves the nonlinearity of the device behaviour. Nonlinear reduced order models are obtained by reducing the number of nonlinearities in the system and handling them as input to the system. In this way, the system can be reduced using linear MOR techniques and nonlinearities are introduced directly in the reduced order model. The reduction of the number of system nonlinearities implies the approximation of all distributed forces in the model with lumped forces. Both for microresonators and switches, a procedure for matrices extraction has been developed so that reduced order models include the effects of electrical and mechanical pre-stress. The extraction process is fast and can be done automatically from ANSYS binary files. The method has been applied for the simulation of several devices both at devices and circuit level. Simulation results have been compared with full model simulations, and, when available, experimental data. Reduced order models have proven to conserve the accuracy of finite element method and to give a good description of the overall device behaviour, despite the introduced approximations. In addition, simulation is very fast, both at device and circuit level. A combined process-flow for the integrated fabrication of microresonators and switches has been defined. For this purpose, two processes that are optimized for the independent fabrication of these devices are merged. The major advantage of this process is the possibility to create on-chip circuit blocks that include both microresonators and switches. An application is, for example, aswitched filter bank for wireless transceiver. The process for microresonators fabrication is characterized by the use of silicon on insulator (SOI) wafers and on a deep reactive ion etching (DRIE) step for the creation of the vibrating structures in single-crystal silicon and the use of a sacrificial oxide layer for the definition of resonator to electrode distance. The fabrication of switches is characterized by the use of two different conductive layers for the definition of the actuation electrodes and by the use of a photoresist as a sacrificial layer for the creation of the suspended structure. Both processes have a gold electroplating step, for the creation of the resonators electrodes, transmission lines and suspended structures. The combined process flow is designed such that it conserves the basic properties of the original processes. Neither the performance of the resonators nor the performance of the switches results affected by the simultaneous fabrication. Moreover, common fabrication steps are shared, which allows for cheaper and faster fabrication.

Characterization of the Capacitance of a Rotating Ring–Disk Electrode

The use of rotating ring–disk electrodes as generator-collector systems has so far been limited to the detection of Faradaic currents at the ring. As opposed to other generator-collector configurations, non-Faradaic detection has not yet been carried out with rotating ring–disk electrodes. In this study, a.c. perturbation based detection for measurement of the ring impedance is introduced. By using a conducting polymer-modified disk electrode in combination with a bare gold ring as a model, it is shown that the measured ring capacitance correlates with the polarization of the polymer film, most probably due to counter-ion exchange. A method of calculating the ring capacitance based on a small-signal sinusoid perturbation is described and the most important instrumental limitations are identified.

Overdeepened glacial basins as archives for the Quaternary landscape evolution of the Alps

The Alps and the Alpine foreland have been shaped by repeated glaciations during Quaternary glacial-interglacial cycles. Extent, timing and impact on landscape evolution of these glaciations are, however, poorly constrained due to the fragmentary character of terrestrial archives. In this context, the sedimentary infills of subglacially eroded, ‘overdeepened’, basins may serve as important archives to complement the Quaternary stratigraphy over several glacial-interglacial cycles. In this thesis, the infills of deep subglacial basins in the Lower Glatt valley (N Switzerland) are explored to better constrain the Middle- to Late Pleistocene environmental change. Five drill cores gave direct insight into to the up to ~200 m thick valley fill at the study site and allowed for detailed analysis of sedimentary facies, age and architecture of the basin fills. A first focus is set on the sedimentology of coarse-grained diamicts with sorted interbeds overlying bedrock in the trough center, which mark the onset of deposition in many glacial bedrock troughs. Evidence from macro- and microsedimentology suggests that these sediments are emplaced subglacially and reflect deposition, reworking and deformation in response to repeated coupling and decoupling of the ice-bed interface promoted by high basal water pressures. Overlying these subglacial sediments, large volumes of sandy glacio-deltaic, fine-grained glacio-lacustrine and lacustrine sediments document sedimentation during glacier retreat from the basins. On these thick valley fill sequences the applicability and reliability of luminescence dating is investigated in a second step on the basis of experiments with several different luminescence signals, protocols and experiments to assess the signal stability. The valley fill of the Lower Glatt valley is then grouped into nine depositional cycles (Formations A-I), which are related to the Birrfeld Glaciation (~MIS2), the Beringen Glaciation (~MIS6), and up to three earlier Middle Pleistocene glaciations, tentatively correlated to the Hagenholz, Habsburg, and Möhlin Glaciations, according to the regional glaciation history. The complex bedrock geometry and valley fill architecture are shown to be the result of multiple erosion and infilling cycles and reflect the interplay of subglacial erosion, glacial to lacustrine infilling of overdeepened basins, and fluvial down-cutting and aggradation in the non-overdeepened valley fill. Evidence suggests that in the study area deep bedrock incision, and/or partial re-excavation, occurred mainly during the Beringen and Hagenholz Glaciation, while older structures may have existed. Together with the observation of minor, ‘inlaid’ glacial basins, dynamic changes in the magnitude and focus of subglacial erosion over time are documented.

Wireless power charger for light electric vehicles

Wireless power transmission technology is gaining more and more attentions in city transportation applications due to its commensurate power level and efficiency with conductive power transfer means. In this paper, an inductively coupled wireless charging system for 48V light electric vehicle is proposed. The power stages of the system is evaluated and designed, including the high frequency inverter, the resonant network, full bridge rectifier, and the load matching converter. Small signal modeling and linear control technology is applied to the load matching converter for input voltage control, which effectively controls the wireless power flow. The prototype is built with a dsPIC digital signal controller; the experiments are carried out, and the results reveal nature performances of a series-series resonant inductive power charger in terms of frequency, air-gap length, power flow control, and efficiency issues.

Wavelength converters based on four-wave mixing in semiconductor optical amplifiers for advanced modulation formats

Les convertisseurs de longueur d’onde sont essentiels pour la réalisation de réseaux de communications optiques à routage en longueur d’onde. Dans la littérature, les convertisseurs de longueur d’onde basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur constituent une solution extrêmement intéressante, et ce, en raison de leurs nombreuses caractéristiques nécessaires à l’implémentation de tels réseaux de communications. Avec l’émergence des systèmes commerciaux de détection cohérente, ainsi qu’avec les récentes avancées dans le domaine du traitement de signal numérique, il est impératif d’évaluer la performance des convertisseurs de longueur d’onde, et ce, dans le contexte des formats de modulation avancés. Les objectifs de cette thèse sont : 1) d’étudier la faisabilité des convertisseurs de longueur d’onde basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur pour les formats de modulation avancés et 2) de proposer une technique basée sur le traitement de signal numérique afin d’améliorer leur performance. En premier lieu, une étude expérimentale de la conversion de longueur d’onde de formats de modulation d’amplitude en quadrature (quadrature amplitude modulation - QAM) est réalisée. En particulier, la conversion de longueur d’onde de signaux 16-QAM à 16 Gbaud et 64-QAM à 5 Gbaud dans un amplificateur optique à semi-conducteur commercial est réalisée sur toute la bande C. Les résultats démontrent qu’en raison des distorsions non-linéaires induites sur le signal converti, le point d’opération optimal du convertisseur de longueur d’onde est différent de celui obtenu lors de la conversion de longueur d’onde de formats de modulation en intensité. En effet, dans le contexte des formats de modulation avancés, c’est le compromis entre la puissance du signal converti et les non-linéarités induites qui détermine le point d’opération optimal du convertisseur de longueur d’onde. Les récepteurs cohérents permettent l’utilisation de techniques de traitement de signal numérique afin de compenser la détérioration du signal transmis suite à sa détection. Afin de mettre à profit les nouvelles possibilités offertes par le traitement de signal numérique, une technique numérique de post-compensation des distorsions induites sur le signal converti, basée sur une analyse petit-signal des équations gouvernant la dynamique du gain à l’intérieur des amplificateurs optiques à semi-conducteur, est développée. L’efficacité de cette technique est démontrée à l’aide de simulations numériques et de mesures expérimentales de conversion de longueur d’onde de signaux 16-QAM à 10 Gbaud et 64-QAM à 5 Gbaud. Cette méthode permet d’améliorer de façon significative les performances du convertisseur de longueur d’onde, et ce, principalement pour les formats de modulation avancés d’ordre supérieur tel que 64-QAM. Finalement, une étude expérimentale exhaustive de la technique de post-compensation des distorsions induites sur le signal converti est effectuée pour des signaux 64-QAM. Les résultats démontrent que, même en présence d’un signal à bruité à l’entrée du convertisseur de longueur d’onde, la technique proposée améliore toujours la qualité du signal reçu. De plus, une étude du point d’opération optimal du convertisseur de longueur d’onde est effectuée et démontre que celui-ci varie en fonction des pertes optiques suivant la conversion de longueur d’onde. Dans un réseau de communication optique à routage en longueur d’onde, le signal est susceptible de passer par plusieurs étages de conversion de longueur d’onde. Pour cette raison, l’efficacité de la technique de post-compensation est démontrée, et ce pour la première fois dans la littérature, pour deux étages successifs de conversion de longueur d’onde de signaux 64-QAM à 5 Gbaud. Les résultats de cette thèse montrent que les convertisseurs de longueur d’ondes basés sur le mélange à quatre ondes dans les amplificateurs optiques à semi-conducteur, utilisés en conjonction avec des techniques de traitement de signal numérique, constituent une technologie extrêmement prometteuse pour les réseaux de communications optiques modernes à routage en longueur d’onde.

Components and circuits for tunneling diode based high frequency sources

Terahertz (THz) technology has been generating a lot of interest because of the potential applications for systems working in this frequency range. However, to fully achieve this potential, effective and efficient ways of generating controlled signals in the terahertz range are required. Devices that exhibit negative differential resistance (NDR) in a region of their current-voltage (I-V ) characteristics have been used in circuits for the generation of radio frequency signals. Of all of these NDR devices, resonant tunneling diode (RTD) oscillators, with their ability to oscillate in the THz range are considered as one of the most promising solid-state sources for terahertz signal generation at room temperature. There are however limitations and challenges with these devices, from inherent low output power usually in the range of micro-watts (uW) for RTD oscillators when milli-watts (mW) are desired. At device level, parasitic oscillations caused by the biasing line inductance when the device is biased in the NDR region prevent accurate device characterisation, which in turn prevents device modelling for computer simulations. This thesis describes work on I-V characterisation of tunnel diode (TD) and RTD (fabricated by Dr. Jue Wang) devices, and the radio frequency (RF) characterisation and small signal modelling of RTDs. The thesis also describes the design and measurement of hybrid TD oscillators for higher output power and the design and measurement of a planar Yagi antenna (fabricated by Khalid Alharbi) for THz applications. To enable oscillation free current-voltage characterisation of tunnel diodes, a commonly employed method is the use of a suitable resistor connected across the device to make the total differential resistance in the NDR region positive. However, this approach is not without problems as the value of the resistor has to satisfy certain conditions or else bias oscillations would still be present in the NDR region of the measured I-V characteristics. This method is difficult to use for RTDs which are fabricated on wafer due to the discrepancies in designed and actual resistance values of fabricated resistors using thin film technology. In this work, using pulsed DC rather than static DC measurements during device characterisation were shown to give accurate characteristics in the NDR region without the need for a stabilisation resistor. This approach allows for direct oscillation free characterisation for devices. Experimental results show that the I-V characterisation of tunnel diodes and RTD devices free of bias oscillations in the NDR region can be made. In this work, a new power-combining topology to address the limitations of low output power of TD and RTD oscillators is presented. The design employs the use of two oscillators biased separately, but with the combined output power from both collected at a single load. Compared to previous approaches, this method keeps the frequency of oscillation of the combined oscillators the same as for one of the oscillators. Experimental results with a hybrid circuit using two tunnel diode oscillators compared with a single oscillator design with similar values shows that the coupled oscillators produce double the output RF power of the single oscillator. This topology can be scaled for higher (up to terahertz) frequencies in the future by using RTD oscillators. Finally, a broadband Yagi antenna suitable for wireless communication at terahertz frequencies is presented in this thesis. The return loss of the antenna showed that the bandwidth is larger than the measured range (140-220 GHz). A new method was used to characterise the radiation pattern of the antenna in the E-plane. This was carried out on-wafer and the measured radiation pattern showed good agreement with the simulated pattern. In summary, this work makes important contributions to the accurate characterisation and modelling of TDs and RTDs, circuit-based techniques for power combining of high frequency TD or RTD oscillators, and to antennas suitable for on chip integration with high frequency oscillators.

MRI indices of functional recovery following intracerebral implantation of a human neural stem cell line in a pre-clinical model of ischaemic stroke

Stem cell therapy for ischaemic stroke is an emerging field in light of an increasing number of patients surviving with permanent disability. Several allogenic and autologous cells types are now in clinical trials with preliminary evidence of safety. Some clinical studies have reported functional improvements in some patients. After initial safety evaluation in a Phase 1 study, the conditionally immortalised human neural stem cell line CTX0E03 is currently in a Phase 2 clinical trial (PISCES-II). Previous pre-clinical studies conducted by ReNeuron Ltd, showed evidence of functional recovery in the Bilateral Asymmetry test up to 6 weeks following transplantation into rodent brain, 4 weeks after middle cerebral artery occlusion. Resting-state fMRI is increasingly used to investigate brain function in health and disease, and may also act as a predictor of recovery due to known network changes in the post-stroke recovery period. Resting-state methods have also been applied to non-human primates and rodents which have been found to have analogous resting-state networks to humans. The sensorimotor resting-state network of rodents is impaired following experimental focal ischaemia of the middle cerebral artery territory. However, the effects of stem cell implantation on brain functional networks has not previously been investigated. Prior studies assessed sensorimotor function following sub-cortical implantation of CTX0E03 cells in the rodent post-stroke brain but with no MRI assessments of functional improvements. This thesis presents research on the effect of sub-cortical implantation of CTX0E03 cells on the resting- state sensorimotor network and sensorimotor deficits in the rat following experimental stroke, using protocols based on previous work with this cell line. The work in this thesis identified functional tests of appropriate sensitivity for long-term dysfunction suitable for this laboratory, and investigated non-invasive monitoring of physiological variables required to optimize BOLD signal stability within a high-field MRI scanner. Following experimental stroke, rats demonstrated expected sensorimotor dysfunction and changes in the resting-state sensorimotor network. CTX0E03 cells did not improve post-stroke functional outcome (compared to previous studies) and with no changes in resting-state sensorimotor network activity. However, in control animals, we observed changes in functional networks due to the stereotaxic procedure. This illustrates the sensitivity of resting-state fMRI to stereotaxic procedures. We hypothesise that the damage caused by cell or vehicle implantation may have prevented functional and network recovery which has not been previously identified due to the application of different functional tests. The findings in this thesis represent one of few pre-clinical studies in resting-state fMRI network changes post-stroke and the only to date applying this technique to evaluate functional outcomes following a clinically applicable human neural stem cell treatment for ischaemic stroke. It was found that injury caused by stereotaxic injection should be taken into account when assessing the effectiveness of treatment.

Interface properties and capacitance-voltage behaviour of diamond devices prepared by microwave-assisted CVD

Free standing diamond films were used to study the effect of diamond surface morphology and microstructure on the electrical properties of Schottky barrier diodes. By using free standing films both the rough top diamond surface and the very smooth bottom surface are available for post-metal deposition. Rectifying electrical contacts were then established either with the smooth or the rough surface. The estimate of doping density from the capacitance-voltage plots shows that the smooth surface has a lower doping density when compared with the top layers of the same film. The results also show that surface roughness does not contribute significantly to the frequency dispersion of the small signal capacitance. The electrical properties of an abrupt asymmetric n(+)(silicon)-p(diamond) junction have also been measured. The I-V curves exhibit at low temperatures a plateau near zero bias, and show inversion of rectification. Capacitance-voltage characteristics show a capacitance minimum with forward bias, which is dependent on the environment conditions. It is proposed that this anomalous effect arises from high level injection of minority carriers into the bulk.