Probing Single and Bilayer Graphene Field Effect Transistors By Raman Spectroscopy

This article is a review of our work related to Raman studies of single layer and bilayer graphenes as a function Fermi level shift achieved by electrochemically top gating a field effect transistor. Combining the transport and in situ Raman studies of the field effect devices, a quantitative understanding is obtained of the phonon renormalization due to doping of graphene. Results are discussed in the light of time dependent perturbation theory, with electron phonon coupling parameter as an input from the density functional theory. It is seen that phonons near and Gamma and K points of the Brillouin zone are renormalized very differently by doping. Further, Gamma-phonon renormalization is different in bilayer graphene as compared to single layer, originating from their different electronic band structures near the zone boundary K-point. Thus Raman spectroscopy is not only a powerful probe to characterize the number of layers and their quality in a graphene sample, but also to quantitatively evaluate electron phonon coupling required to understand the performance of graphene devices.

Role of the cesium antimonide layer in the Na2KSb/Cs3Sb photocathode

When radiation of sufficiently high energy is incident on the surface of a semiconductor photocathode, electrons are excited from the valence band to the conduction band and these may contribute to the photocurrent. The photocurrent in a single-layer cathode is found to be small, because of collisions within the cathode material, the electron affinity condition, etc. It is observed that when a thin layer of n-type cesium antimonide (Cs3Sb) is deposited over a p-type layer of sodium potassium antimonide (Na2KSb), there occurs a sharp rise in the photocurrent. The causes for the dramatic increase in the photocurrent obtainable from a sodium potassium antimonide cathode, by depositing a thin layer of cesium antimonide are analyzed in this article. It has been shown that the interface between sodium potassium antimonide and cesium antimonide can result in lowering of the electron affinity to a level below the bottom of the conduction band of sodium potassium antimonide. The drift field that arises at the heterointerface enables the electrons to reach the surface, leading to the emission of almost all the photogenerated electrons within the cathode. The processes involved in photoemission from such a double-layer cathode are examined from a theoretical point of view. The spectral response of the two-layer cathode is also found to be better than that of a single-layer cathode.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy and characterized by photoluminescence (PL). For both single- and multi-layer QDs, PL intensity of the first excited state is larger than that of the ground state at 15 K. Conversely, at room temperature (RT), PL intensity of the first excited state is smaller than that of the ground state. This result is explained by the phonon bottleneck effect. To the ground state, the PL intensities of the multi-layer QDs are larger than that of the single-layer QDs at 15 K, while the intensities are smaller than that of the single-layer QDs at RT. This is due to the defects in the multi-layer QD samples acting as the nonradiative recombination centers. The inter-diffusion of Ga and In atoms in the growth process of multi-layer QDs results in the PL blueshift of the ground state and broadening of the full-width at half-maximum (FWHM), which can be avoided by decreasing the spacers' growth temperature. At the spacers' growth temperature of 520degreesC, we have prepared the 5-layer QDs which emit near 1.3 mum with a FWHM of 31.7 meV at RT, and 27.9 meV at 77 K. (C) 2002 Published by Elsevier Science B.V.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Novel White Electroluminescent Single Polymer Derived from Fluorene and Quinacridone

A novel series of white light emitting single polymers are prepared by incorporating low contents of quinacridone into the main chain of polyfluorene. This is the first report of quinacridone-containing conjugated polymer. Single layer devices (ITO/PEDOT:PSS/polymer/Ca/Al) are fabricated with these polymers. Energy transfer from fluorene segments to quinacridone unit is observed. Moreover, in the EL process, quinacridone unit can trap electrons and cannot trap holes from fluorene segments.

Double-ceramic-layer thermal barrier coatings of La2Zr2O7/YSZ deposited by electron beam-physical vapor deposition

Double-ceramic-layer(DCL) thermal barrier coatings (TBCs) of La2Zr2O7 (LZ) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies and cyclic oxidation behavior of the DCL coating were studied. Both the X-ray diffraction (XRD) and thermogravimetric-differential thermal analysis (TG-DTA) prove that LZ and YSZ have good chemical applicability to form a DCL coating. The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ coating. and even longer than that of the single layer YSZ coating. The failure of the DCL coating is a result of both the bond coat oxidation and the thermal strain between bond coat and ceramic layer generated by the thermal expansion mismatch.

Molecular design on highly efficient white electroluminescence from a single-polymer system with simultaneous blue, green, and red emission

A highly efficient white electroluminescent polymer with simultaneous blue, green, and red emission is reported, developed using a dopant/host strategy by covalently attaching both a green- and a red-light-emitting dopant to the side chain of a blue-light-emitting polymer host (see figure). In a single-layer device a maximum luminance efficiency of 7.3 cd A(-1) with CIE coordinates of (0.31,0.32) is achieved.

White electroluminescence from a single polymer system: Improved performance by means of enhanced efficiency and red-shifted luminescence of the blue-light-emitting species

High-efficiency white electrolurninescence from a single polymer is achieved by enhancing the electroluminescence efficiency and effecting a red-shift in the emission spectrum of the blue emissive species. A single-layer device of the resultant polymer exhibits a higher luminous efficiency than the nonmodified species (12.8 cd A(-1), see figure) and an external quantum efficiency of 5.4 % with CIE coordinates of (0.31,0.36), exemplifying the success of the reported methodology.

Three-color white electroluminescence from a single polymer system with blue, green and red dopant units as individual emissive species and polyfluorene as individual polymer host

A white electroluminescent single polymer system with both high electroluminescence efficiency and excellent color rendering index (CRI) value is developed by covalently attaching blue, green, and red dopant units as individual light-emitting species to the side chain of polyfluorene as individual polymer host. A luminous efficiency of 8.6 cd A(-1), CIE coordinates of (0.33, 0.36) and CRI value of 88 was demonstrated with their single-layer devices.

White electroluminescence from a single-polymer system with simultaneous two-color emission: Polyfluorene as blue host and 2,1,3-benzothiadiazole derivatives as orange dopants on the side chain

Four single polymers with two kinds of attachment of orange chromophore to blue polymer host for white electroluminescence (EL) were designed. The effect of the side-chain attachment and main-chain attachment on the EL efficiencies of the resulting polymers was compared. The side-chain-type single polymers are found to exhibit more efficient white EL than that of the main-chain-type single polymers. Based on the side-chain-type white single polymer with 4-(4-alkyloxy-phenyl)-7-(4-diphenylamino-phenyl)-2,1,3-benzothiadiazoles as the orange-dopant unit and polyfluorene as the blue polymer host, white EL with simultaneous orange (lambda(max) = 545 nm) and blue emission (lambda(max) = 432 nm/460 nm) is realised. A single-layer device (indium tin oxide/poly(3,4-ethylenedioxythiophene)/polymer/Ca/Al) made of these polymers emits white light with the Commission Internationale de l'Eclairage coordinates of (0.30,0.40), possesses a turn-on voltage of 3.5 V, luminous efficiency of 10.66 cd A(-1), power efficiency of 6.68 lm W-1, and a maximum brightness of 21240 cd m(-2).

White electrolumineseence from a single-polymer system with simultaneous two-color emission: Polyfluorene as the blue host and a 2,1,3-benzothiadiazole derivative as the orange dopant on the main chain

New single-polymer electroluminescent systems containing two individual emission species - polyfluorenes as a blue host and 2,1,3-benzothiadiazole derivative units as an orange dopant on the main chain - have been designed and synthesized. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue(lambda(max) = 421 nm/445 nm) and orange emission (lambda(max) = 564 nm)from the corresponding emitting species. The influence of the photoluminescence (PL) efficiencies of both the blue and orange species on the electroluminescence (EL) efficiencies of white polymer light-emitting diodes (PLEDs) based on the single-polymer systems has been investigated. The introduction of the highly efficient 4,7-bis(4-(N-phenyl-N-(4-methylphenyl)amino)phenyl)-2,1,3-benzothiadiazole unit to the main chain of polyfluorene provides significant improvement in EL efficiency. For a single-layer device fabricated in air (indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid/polymer/Ca/Al), pure-white electroluminescence with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35,0.32), maximum brightness of 12 300 cd m(-2), luminance efficiency of 7.30 cd A(-1), and power efficiency of 3.34 lm W-1 can be obtained.

Thermal stability of double-ceramic-layer thermal barrier coatings with various coating thickness

Double-ceramic-layer (DCL) coatings with various thickness ratios composed of YSZ (6-8 wt.% Y2O3 + ZrO2) and lanthanum zirconate (LZ, La2Zr2O7) were produced by the atmospheric plasma spraying. Chemical stability of LZ in contact with YSZ in DCL coatings was investigated by calcining powder blends at different temperatures. No obvious reaction was observed when the calcination temperature was lower than 1250 degrees C, implying that LZ and YSZ had good chemical applicability for producing DCL coating. The thermal cycling test indicate that the cycling lives of the DCL coatings are strongly dependent on the thickness ratio of LZ and YSZ, and the coatings with YSZ thickness between 150 and 200 mu m have even longer lives than the single-layer YSZ coating. When the YSZ layer is thinner than 100 mu m, the DCL coatings failed in the LZ layer close to the interface of YSZ layer and LZ layer. For the coatings with the YSZ thickness above 150 mu m, the failure mainly occurs at the interface of the YSZ layer and the bond coat.