Shu shi : 15 juan /

Imprint date from preface.

Cheng tan shan fang gu wen cun gao : si juan ; Cheng tan shan fang shi ji : shi qi juan /

Kuang 19 x 14.5 cm., 9 hang 25 zi, bai kou, zuo you shuang bian, ban xin zhong juan juan ci, xia juan ye ci.

Ya qu zang shu /

Caption title.

Dong gang shi sheng : shi si juan, juan shou, juan mo /

Jiaqing er shi nian Shu Wei xu shu ji ke shu shi.

Yan chuan ji : shi si juan /

Fan Zhaoli xu shu ji chong bian shu shi

Si sheng yi zhi lu : si juan /

Double leaves, oriental style, in case.

Tie xiao an shi chao : er juan ; Tie xiao an wen ji : si juan /

Fu: Yuan Cheng zhuan Du xiao xuan wen gao.

Hua chuang meng ying tu : shi : si juan, ci : yi juan, he yun : yi juan /

Ci shu wei Cheng shi yu you peng chang chou zhi ji.

Guo chao ru lin zheng lun : si juan /

Daoguang er shi nian Wang Ruyu xu shu ji Wang shi bian shu shi.

Ge zhu wen chao : si juan /

Qing Daoguang shi liu nian Huang Chengji xu shu ji ke shu shi.

Hou Han shu /

On double leaves, oriental style, in case.

A new low temperature synthesis route of fraipontite (Zn,Al)3(Si,Al)2O5(OH)4

A low temperature synthesis method based on the decomposition of urea at 90°C in water has been developed to synthesise fraipontite. This material is characterised by a basal reflection 001 at 7.44 Å. The trioctahedral nature of the fraipontite is shown by the presence of a 06l band around 1.54 Å, while a minor band around 1.51 Å indicates some cation ordering between Zn and Al resulting in Al-rich areas with a more dioctahedral nature. TEM and IR indicate that no separate kaolinite phase is present. An increase in the Al content however, did result in the formation of some SiO2 in the form of quartz. Minor impurities of carbonate salts were observed during the synthesis caused by to the formation of CO32- during the decomposition of urea.

Ordering of Ge islands on Si(001) substrates patterned by nanoindentation

Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by atomic force microscopy and scanning electron microscopy. The nanoindents act as trapping sites, allowing ripening of Ge islands at those locations during subsequent deposition and diffusion of Ge on the surface. The results show that island ordering is intrinsically linked to the nucleation and growth at indented sites and it strongly depends on pattern parameters.