992 resultados para SM(TTA)(3)PHEN


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The near-infrared (NIR) luminescent lanthanide ions, such as Er(III), Nd(III), and Yb(III), have been paid much attention for the potential use in the optical communications or laser systems. For the first time, the NIR-luminescent Ln(dbm)(3)phen complexes have been covalently bonded to the ordered mesoporous materials MCM-41 and SBA-15 via a functionalized phen group phen-Si (phen-Si = 5-(N,N-bis-3-(triethoxysilyl)propyl)ureyl-1,10-phenanthroline; dbm = dibenzoylmethanate; Ln = Er, Nd, Yb). The synthesis parameters X = 12 and Y = 6 h (X denotes Ln(dbM)(3)(H2O)(2)/phen-MCM-41 molar ratio or Ln(dbM)(3)(H2O)(2)/phenSBA-15 molar ratio and Y is the reaction time for the ligand exchange reaction; phen-MCM-41 and phenSBA-15 are phen-functionalized MCM-41 and SBA-15 mesoporous materials, respectively) were selected through a systematic and comparative study. The derivative materials, denoted as Ln(dbM)(3)phen-MCM-41 and Ln(dbm)(3)phen-SBA-15 (Ln = Er, Nd, Yb), were characterized by powder X-ray diffraction, nitrogen adsorption/desorption, Fourier transform infrared (FT-IR), elemental analysis, and fluorescence spectra. Upon excitation of the ligands absorption bands, all these materials show the characteristic NIR luminescence of the corresponding lanthanide ions through the intramolecular energy transfer from the ligands to the lanthanide ions.

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An organic light-emitting diode fabricated by doping a europium, complex tris(dibiphenoylmethane)-mono (phenanthroline)-europium (Eu(DBPM)(3) (Phen)) into polymer poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene) and poly(N-carbazole) was realized by spin coating. Comparison with other europium complexes, due to the existence of a larger spectral overlap between Eu(DBPM)(3)(Phen) and poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4phenylene), a high efficiency red emission was achieved. The device showed a turn-on voltage of 5.2 V The maximum efficiency reached 0.47 cd/A at luminance of 50 cd/m(2). The maximum luminance can reach 150 cd/m(2) at 95 mA/cm(2). To the best of our knowledge, this is one of the best results based on europium complexes by spin-casting method.

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Stacked organic light-emitting devices (OLEDs) based on a europium complex Eu(TTA)(3) (Tmphen) (TTA = thenoyltrifluoroacetone,Tmphen = 3,4,7,8-tetramethyl-1,10-phenanthroline) were fabricated. In this stacked OLEDs, Li:BCP/V2O5 was used the intermediate charge generation layer sandwiched between two identical emissive units consisting of TPD/CBP:DCJTB:Eu(TTA)(3)(Tmphen)/BCP. As expected, the brightness and electroluminescent (EL) current efficiency were approximately enhanced by double times that of conventional single-unit devices. The stacked OLEDs showed the maximum luminance up to 3000 cd/m(2) at a current density of 190 mA/cm(2) and a current efficiency of 14.5 cd/A at a current density of 0.08 mA/cm(2). At the brightness of 100 cd/m(2), the current efficiency reached 10 cd/A at a current density of 1.6 mA/cm2.

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Ambient reflection of organic light-emitting diodes (OLEDs) is reduced by utilizing a multilayer low-reflection cathode. The low-reflection cathode structure consists of a semitransparent cathode layer, a transparent spacing layer and a high reflective layer. Metals with different optical properties, including silver (Ag) and samarium (Sm), are used as the semitransparent cathode layer, tris(8-quinolinolato) aluminium (Alq(3)) and aluminium (Al) are used as the spacing layer and high reflective layer, respectively. The incident ambient light could be reduced by the cathode structure via destructive optical interference. It is found that the Ag/Alq(3)/Al cathode shows a strong wavelength-dependent reflection. However, the Sm/Alq(3)/Al cathode demonstrates a low reflection in the whole visible range, and the resulting OLED shows a reduced luminous reflectance of 2.7% as compared to 81% for a control device with LiF/Al cathode. A further reduction to 0.9% is realized by replacing a multilayer of Alq(3)/Sm/Alq(3) for the single layer of Alq(3).

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An efficient organic light-emitting device using a trivalent europium (Eu) complex Eu(Tmphen)(TTA)(3) (TTA=thenoyltrifluoroacetone, Tmphen=3,4,7,8-tetramethyl-1,10-phenanthroline) as the dopant emitter was fabricated. The devices were a multilayer structure of indium tin oxide/N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (40 nm)/ Eu complex:4,4-N,N-dicarbazole-biphenyl (1%, 30 nm)/2,9-dimethyl,4,7-diphenyl-1,10phenanthroline (20 nm)/AlQ (30 nm)/LiF (1 nm)/Al (100 nm). A pure red light with a peak of 612 nm and a half bandwidth of 3 nm, which is the characteristic emission of trivalent europium ion, was observed. The devices show the maximum luminance up to 800 cd/m(2), an external quantum efficiency of 4.3%, current efficiency of 4.7 cd/A, and power efficiency of 1.6 lm/W. At the brightness of 100 cd/m(2), the quantum efficiency reaches 2.2% (2.3 cd/A).

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A new tetrakis praseodymium(tu) complex Pr(TFNB)(3)Phen has been synthesized, in which TFNB is 4,4,4-trifluoro-1-(2-naphthyl)-1,3-butanedione and Phen is 1,10-phenanthroline. Its crystal structure and luminescent spectra were successfully determined and investigated. The typical antenna effect existing in the luminescence of Pr(TFNB)(3)Phen was revealed by the study of the UV-Vis absorption spectra of ligands and the excitation spectrum of Pr(TFNB)(3)Phen.

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利用层流恒界面池 ,研究了在 (30 3± 0 .5 K)下纯化 Cyanex92 3-正庚烷 - Na NO3体系萃取 L a( )、Y( )和 Sm( )的传质动力学。考察了搅拌速度、温度及比界面积对萃取速率的影响。实验表明 ,在硝酸体系中 ,Cyanex92 3萃取 L a( )、Y( )和 Sm( )的正向表观活化能分别为 32 .0 k J· mol- 1、16 .4 k J· m ol- 1和 15 .1k J· m ol- 1 ,L a( )的萃取为混合控制过程 ,Y( )和 Sm( )萃取为扩散控制过程。实验还表明萃取过程的化学反应均发生在液 -液界面上。

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In this study, a terbium complex, Tb(acac)(3)bath (acac: acetylacetone, bath: 4,7-diphenyl-1,10-phenanthroline), was synthesized and its luminescent properties were investigated compared with the reported terbium complex, Tb(acac)(3)phen (phen: phenanthroline). When it was used as an emitting material in organic electroluminescent (EL) device, the triple-layer-type device with a structure of glass substrate/ITO (indium-tin oxide)/TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine)/Tb(acac)(3)bath/Alq(3) (tris (8-hydroxyquinolinato) aluminum)/Al (aluminum) exhibited bright characteristic emission of terbium ion upon applying DC voltage. An apparent difference was observed between the photoluminescence spectrum and the EL spectrum. The EL device exhibited some characteristics of diode and the maximum luminance of 77 cd/m(2) was obtained at 17 V.

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Novel soluble rare earth aromatic carboxylates were prepared. The triplet energy level of organic ligand was measured. The photoluminescence properties of the Tb3+ and EU3+ aromatic carboxylates and lifetimes were investigated, which indicated that these rare earth complexes have high quantum efficiency. Because of their excellent solubility, polymer-doping rare earth carboxylates were fabricated as thin Films by spin-coating method and their luminescence properties were studied. Some rare earth organic light-emitting diodes were successfully fabricated which performed high pure color. The maximum luminance of the device of ITO/PVK/PVK :Th (AS)(3)Phen: PBD/PBD/Al is 32 cd(.)m(-2) at 28 V.

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Rare earth complex Eu(DBM)(3)phen (DBM: dibenzoylmethane, phen: 1.10-phenanthroline) hits been incorporated into unmodified MCM-41 and modified MCM-41s by aminopropyltriethoxysilane (APTES) or N-[(3-triethoxysilyl)propyl]ethylenediamine(TEPED). Thus, the assemblies of unmodified or modified MCM-41s with rare earth (RE) complex have been obtained. XRD spectra. NMR spectra. diffuse reflectance spectra. and the luminescence spectra were used to characterize the pure RE complex and the corresponding assemblies. The assemblies have better luminescence properties under UV irradiation. and their fluorescence lifetimes on the excited state are longer than that of the corresponding pure complex. The possible mechanisms are also discussed in the context.

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By comparing the phosphorescence spectra of Gd(acac)(3) (acac: acetylacetone) and Gd(TFacac)(3) (TFacac: 1, 1, 1-trifluoro-acetylacetone), the effect of fluorine replacing of hydrogen was discussed. It can lower the triplet state energy of acac and make it more suitable to the D-5(1) energy state of europium. Organic electroluminescent (OEL) devices with corresponding europium complexes as emissive layers were fabricated. A triple laver-type device with a structure of glass substrate/indium-tin oxide (ITO)/poly(N-vinylcarbazole) (PVK)/PVK:Eu(TFacac)(3)phen:2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD)/PBD/Al exhibits bright red luminescence upon applying dc voltage, The device has the properties of a diode and the current-bias voltage line was obtained.

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Two kinds of rare earth (RE) complexes were intercalated into zirconium bis(monohydrogenphosphate) (alpha -ZrP) by exchanging the RE complexes into the p-methyoxyaniline (PMA) preintercalated compound Zr(O3POH)(2). 2PMA (alpha -ZrP . 2PMA). Powder X-ray diffraction patterns reveal that Eu(DBM)(3)phen (DBM: dibenzoylmethane, phen: 1,10-phenanthroline) and Tb(AA)(3)phen (AA: acetylacetone) intercalated into alpha -ZrP . 2PMA. This was confirmed by the UV-visible spectra of both the RE complexes and the assemblies. At the same time, the assemblies have better luminescent properties, and the fluorescent lifetimes of RE3+ in the excited state in the assemblies are much longer than those in the complexes. The stabilities of the assemblies under UV radiation are much better than those of the RE complexes.

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The encapsulation of a rare earth (RE) complex Eu(DBM)(3)phen in modified S1-MCM-41 with 3-aminopropyltriethoxysilane is reported for the first time. The luminescence intensity of the RE complex in the modified Si-MCM-41 is about 9 times as strong as in unmodified Si-MCM-41 and the luminescence of the RE complex in the modified SI-MCM-41 has good color purity.

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Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].

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Layered compound zirconium bis(monohydrogenphosphate)(alpha-ZrP) intercalated with rare earth complex Eu(DBM)(3)phen was prepared. The pre-intercalation of p-methoxyaniline into alpha-ZrP makes the interlayer separation large enough to exchange PMA with europium complex, thus, the luminescent assembly was prepared. This was confirmed by X-ray diffraction, UV-visible spectra and elemental analysis. The fluorescence spectra and lifetime of the assembly were also presented.