Effect of microstructure on the mechanical behavior of b-modified ti-6al-4v alloys

Small additions of B to Titanium alloys refine the as-cast microstructure significantly and hence improve their mechanical performance. In this work, tensile, fracture and fatigue properties of the as-cast and HIPed Ti-6Al-4V alloy with hypoeutectic wt.% of B additions have been examined, with particular emphasis on identifying the microstructural length scale that controls the mechanical properties of these alloys.

Pressure transitions and electron transport behaviour of crystalline Se-Te alloys

Pressure transitions of Se-Te alloys have been studied over the entire range of compositions. Conductivities have also been measured as a function of temperature and alloy composition. Transition pressures, activation barriers and isothermal conductivities exhibit distinct changes of slope in their variation as a function of composition at about 8 at % of Te. Transition pressures change slope at not, vert, similar 35% Te also. An attempt has been made to explain these observations on the basis of the size effect of Te which, in turn, affects the electron energy dispersions in the band structure.

Subsurface deformation in dry sliding of hypo-eutectic Al-Si alloys

The subsurface deformation during dry sliding of Al-Si alloys is studied by fragmentation of silicon particles. The size of the fragmented particles does not vary with load. The depth of deformation is found to increase with increase in normal load. This experimental observation agrees with load-deformation depth characteristics obtained by a slip line field model.

The nature of non-equilibrium solidification of undercooled Agsingle bondCu alloys in contact with primary copper dendrites

Liquids of silver-copper alloys with near eutectic compositions embedded in a copper matrix were undercooled. The structural and microstructural investigations of these alloys solidified from undercooled temperature indicated the absence of both the eutectic reaction and diffusionless transformation below the equal free energy curve (T0). Instead the liquid maintained local equilibrium with the copper dendrites continuously until it intersected the extended solidus of the silver rich solid solution.

Pressure-Induced transitions in amorphous TlxSe100-x alloys

The electrical resistivity of bulk semiconducting amorphous TlxSe100-x alloys with 0 ≤ x ≤ 25 has been investigated up to a pressure of 14 GPa and down to liquidnitrogen temperature by use of a Bridgman anvil device. All the glasses undergo a discontinuous pressure-induced semiconducting-to-metal transition. X-ray diffraction studies on the pressure-recovered samples show that the high-pressure phase is the crystalline phase. The pressure-induced crystalline products are identified to be a mixture of Se having a hexagonal structure with a = 4·37 Aring and c = 4·95 Aring and TlSe having a tetragonal structure with a = 8·0 Aring and c = 7·0 Aring

Characterization of dry sliding wear of Al---Si alloys

Controversy exists in the published literature as to the effect of silicon content and pressure on the dry sliding wear of Al---Si alloys. The present paper attempts to clarify the question by reporting a statistical analysis of data obtained from factorially designed experiments conducted on a pinon-disc machine in the pressure range 0.105–1.733 MPa and speed range 0.19–0.94 m s−1. Under these conditions it was found that, in the range 4–24 wt.% Si, wear of binary unmodified alloys does not significantly differ between the alloys. However, it is significantly less than that corresponding to an alloy containing no silicon. The effect of pressure on wear rate was found to be linear and monotonie and, over the narrow range of speeds used, the wear rate was found to be unaffected by speed. The coefficient of friction was found to be insensitive to variations in silicon content, pressure and speed.

Thermodynamics of cobalt-manganese alloys using fluoride and oxide electrolytes

Abstract is not available.

Characterisation of humidity dependence of a metal oxide semiconductor (MOS) sensor array using Partial Least Squares (PLS)

Metal oxide semiconductor (MOS) sensors are a class of chemical sensor that have potential for being a practical core sensor module for an electronic nose system in various environmental monitoring applications. However, the responses of these sensors may be affected by changes in humidity and this must be taken into consideration when developing calibration models. This paper characterises the humidity dependence of a sensor array which consists of 12 MOS sensors. The results were used to develop calibration models using partial least squares. Effects of humidity on the response of the sensor array and predictive ability of partial least squares are discussed. It is shown that partial least squares can provide proper calibration models to compensate for effects caused by changes in humidity.

Characterisation of humidity dependence of a metal oxide semiconductor sensor array using partial least squares

Metal oxide semiconductor (MOS) sensors are a class of chemical sensors that have potential for being a practical core sensor module for an electronic nose system in various environmental monitoring applications. However, the responses of these sensors may be affected by changes in humidity and this must be taken into consideration when developing calibration models. This paper characterises the humidity dependence of a sensor array which consists of 12 MOS sensors. The results were used to develop calibration models using partial least squares (PLS). Effects of humidity on the response of the sensor array and predictive ability of partial least squares are discussed. It is shown that partial least squares can provide proper calibration models to compensate for effects caused by changes in humidity. Special Issue: Selected Paper from the 12th International Symposium on Olfaction and Electronic Noses - ISOEN 2007, International Symposium on Olfaction and Electronic Noses.

Numerical studies on columnar-to-equiaxed transition in directional solidification of binary alloys

A numerical study on columnar-to-equiaxed transition (CET) during directional solidification of binary alloys is presented using a macroscopic solidification model. The position of CET is predicted numerically using a critical cooling rate criterion reported in literature. The macroscopic solidification model takes into account movement of solid phase due to buoyancy, and drag effect on the moving solid phase because of fluid motion. The model is applied to simulate the solidification process for binary alloys (Sn-Pb) and to estimate solidification parameters such as position of the liquidus, velocity of the liquidus isotherm, temperature gradient ahead of the liquidus, and cooling rate at the liquidus. Solidification phenomena under two cooling configurations are studied: one without melt convection and the other involvin thermosolutal convection. The numerically predicted positions of CET compare well with those of experiments reported in literature. Melt convection results in higher cooling rate, higher liquidus isotherm velocities, and stimulation of occurrence of CET in comparison to the nonconvecting case. The movement of solid phase aids further the process of CET. With a fixed solid phase, the occurrence of CET based on the same critical cooling rate is delayed and it occurs at a greater distance from the chill.

Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures

The resistivity of selenium-doped n-InP single crystal layers grown by liquid-phase epitaxy with electron concentrations varying from 6.7 x 10$^18$ to 1.8 x 10$^20$ cm$^{-3}$ has been measured as a function of hydrostatic pressure up to 10 GPa. Semiconductor-metal transitions were observed in each case with a change in resistivity by two to three orders of magnitude. The transition pressure p$_c$ decreased monotonically from 7.24 to 5.90 GPa with increasing doping concentration n according to the relation $p_c = p_o [1 - k(n/n_m)^a]$, where n$_m$ is the concentration (per cubic centimetre) of phosphorus donor sites in InP atoms, p$_o$ is the transition pressure at low doping concentrations, k is a constant and $\alpha$ is an exponent found experimentally to be 0.637. The decrease in p$_c$ is considered to be due to increasing internal stress developed at high concentrations of ionized donors. The high-pressure metallic phase had a resistivity (2.02-6.47) x 10$^{-7}$ $\Omega$ cm, with a positive temperature coefficient dependent on doping.

Quasi Crystalline A1-Mn Alloys: Pressure Induced Crystallization and Structural Studies

Irreversible, Pressure induced, quasicrystal-to-crystal transitions are observed for the first time in melt spun alloys at 4.9 GPa for Al 78 Mn22 and 9.3 GPa for Al86 Mn14 by monitoring the electrical resistivities of these alloys as a function of pressure. Electron diffraction and x-ray measurements are used to show that these quasicrystalline phases have icosohedral point group symmetry. The crystalline phases which appear at high pressures are identified as h.c.p. for Al78 Mn22 and orthorhombic for Al86 Mn14.

Adsorption Of Methanol On The Surfaces Of Copper-Alloys - Ups And Eels Studies

Methanol adsorbs molecularly on the surfaces of Cu–Pd alloys at low temperatures and transforms to CH3O or CO on warming, depending upon the alloy composition. On oxygen presorbed Cu–Pd alloy surfaces, adsorption of methanol gives rise to H2O and H2CO. CH3OH adsorbed molecularly on the surfaces of Cu–Au alloys and CH3O is formed only at relatively high temperatures.