Study of the II Network as the Compound Slot Equivalent Circuit Model

A combination of Method of Moments (MoM) and compound slot Equivalent Circuit Model for linear array design is presented in this document. From the S Matrix of the single element, the more suitable network for its characterization is analyzed and selected. Then according to the radiation requirements of the desired array, the elements are designed and then properly connected by means of Forward Matching Procedure (FMP), which takes into account impedance matters in order to keep the input matched at the designing frequency. Comparison between HFSS simulations and MoM-FMP results are also presented. First part of this work was introduced in (1)(2) but a summary is included here to make the understanding easier.

Array Compacto De Monopolos Planos Con Plano De Tierra Ranurado Para Sistemas Mimo

A compact array of monopoles with a slotted ground plane is analyzed for being used in MIMO systems. Compact arrays suffer usually from high coupling which degrades significantly MIMO benefits. Through a matching network, main drawbacks can be solved, although it tends to provide a low bandwidth. The studied design is an array of monopoles with a slot in the ground plane. The slot shape is optimized with a Genetic Algorithm and an own electromagnetic software based on MoM in order to fulfill main figures of merit within a significant bandwidth

Contribution to the design of waveguide-fed compound-slot arrays by means of equivalent circuit modelling

Los arrays de ranuras son sistemas de antennas conocidos desde los años 40, principalmente destinados a formar parte de sistemas rádar de navíos de combate y grandes estaciones terrenas donde el tamaño y el peso no eran altamente restrictivos. Con el paso de los años y debido sobre todo a importantes avances en materiales y métodos de fabricación, el rango de aplicaciones de este tipo de sistemas radiantes creció en gran medida. Desde nuevas tecnologías biomédicas, sistemas anticolisión en automóviles y navegación en aviones, enlaces de comunicaciones de alta tasa binaria y corta distancia e incluso sistemas embarcados en satélites para la transmisión de señal de televisión. Dentro de esta familia de antennas, existen dos grupos que destacan por ser los más utilizados: las antennas de placas paralelas con las ranuras distribuidas de forma circular o espiral y las agrupaciones de arrays lineales construidos sobre guia de onda. Continuando con las tareas de investigación desarrolladas durante los últimos años en el Instituto de Tecnología de Tokyo y en el Grupo de Radiación de la Universidad Politécnica de Madrid, la totalidad de esta tesis se centra en este último grupo, aunque como se verá se separa en gran medida de las técnicas de diseño y metodologías convencionales. Los arrays de ranuras rectas y paralelas al eje de la guía rectangular que las alimenta son, sin ninguna duda, los modelos más empleados debido a la fiabilidad que presentan a altas frecuencias, su capacidad para gestionar grandes cantidades de potencia y la sencillez de su diseño y fabricación. Sin embargo, también presentan desventajas como estrecho ancho de banda en pérdidas de retorno y rápida degradación del diagrama de radiación con la frecuencia. Éstas son debidas a la naturaleza resonante de sus elementos radiantes: al perder la resonancia, el sistema global se desajusta y sus prestaciones degeneran. En arrays bidimensionales de slots rectos, el campo eléctrico queda polarizado sobre el plano transversal a las ranuras, correspondiéndose con el plano de altos lóbulos secundarios. Esta tesis tiene como objetivo el desarrollo de un método sistemático de diseño de arrays de ranuras inclinadas y desplazadas del centro (en lo sucesivo “ranuras compuestas”), definido en 1971 como uno de los desafíos a superar dentro del mundo del diseño de antennas. La técnica empleada se basa en el Método de los Momentos, la Teoría de Circuitos y la Teoría de Conexión Aleatoria de Matrices de Dispersión. Al tratarse de un método circuital, la primera parte de la tesis se corresponde con el estudio de la aplicabilidad de las redes equivalentes fundamentales, su capacidad para recrear fenómenos físicos de la ranura, las limitaciones y ventajas que presentan para caracterizar las diferentes configuraciones de slot compuesto. Se profundiza en las diferencias entre las redes en T y en ! y se condiciona la selección de una u otra dependiendo del tipo de elemento radiante. Una vez seleccionado el tipo de red a emplear en el diseño del sistema, se ha desarrollado un algoritmo de cascadeo progresivo desde el puerto alimentador hacia el cortocircuito que termina el modelo. Este algoritmo es independiente del número de elementos, la frecuencia central de funcionamiento, del ángulo de inclinación de las ranuras y de la red equivalente seleccionada (en T o en !). Se basa en definir el diseño del array como un Problema de Satisfacción de Condiciones (en inglés, Constraint Satisfaction Problem) que se resuelve por un método de Búsqueda en Retroceso (Backtracking algorithm). Como resultado devuelve un circuito equivalente del array completo adaptado a su entrada y cuyos elementos consumen una potencia acorde a una distribución de amplitud dada para el array. En toda agrupación de antennas, el acoplo mutuo entre elementos a través del campo radiado representa uno de los principales problemas para el ingeniero y sus efectos perjudican a las prestaciones globales del sistema, tanto en adaptación como en capacidad de radiación. El empleo de circuito equivalente se descartó por la dificultad que suponía la caracterización de estos efectos y su inclusión en la etapa de diseño. En esta tesis doctoral el acoplo también se ha modelado como una red equivalente cuyos elementos son transformadores ideales y admitancias, conectada al conjunto de redes equivalentes que representa el array. Al comparar los resultados estimados en términos de pérdidas de retorno y radiación con aquellos obtenidos a partir de programas comerciales populares como CST Microwave Studio se confirma la validez del método aquí propuesto, el primer método de diseño sistemático de arrays de ranuras compuestos alimentados por guía de onda rectangular. Al tratarse de ranuras no resonantes, el ancho de banda en pérdidas de retorno es mucho mas amplio que el que presentan arrays de slots rectos. Para arrays bidimensionales, el ángulo de inclinación puede ajustarse de manera que el campo quede polarizado en los planos de bajos lóbulos secundarios. Además de simulaciones se han diseñado, construido y medido dos prototipos centrados en la frecuencia de 12GHz, de seis y diez elementos. Las medidas de pérdidas de retorno y diagrama de radiación revelan excelentes resultados, certificando la bondad del método genuino Method of Moments - Forward Matching Procedure desarrollado a lo largo de esta tésis. Abstract The slot antenna arrays are well known systems from the decade of 40s, mainly intended to be part of radar systems of large warships and terrestrial stations where size and weight were not highly restrictive. Over the years, mainly due to significant advances in materials and manufacturing methods, the range of applications of this type of radiating systems grew significantly. From new biomedical technologies, collision avoidance systems in cars and aircraft navigation, short communication links with high bit transfer rate and even embedded systems in satellites for television broadcast. Within this family of antennas, two groups stand out as being the most frequent in the literature: parallel plate antennas with slots placed in a circular or spiral distribution and clusters of waveguide linear arrays. To continue the vast research work carried out during the last decades in the Tokyo Institute of Technology and in the Radiation Group at the Universidad Politécnica de Madrid, this thesis focuses on the latter group, although it represents a technique that drastically breaks with traditional design methodologies. The arrays of slots straight and parallel to the axis of the feeding rectangular waveguide are without a doubt the most used models because of the reliability that they present at high frequencies, its ability to handle large amounts of power and their simplicity of design and manufacturing. However, there also exist disadvantages as narrow bandwidth in return loss and rapid degradation of the radiation pattern with frequency. These are due to the resonant nature of radiating elements: away from the resonance status, the overall system performance and radiation pattern diminish. For two-dimensional arrays of straight slots, the electric field is polarized transverse to the radiators, corresponding to the plane of high side-lobe level. This thesis aims to develop a systematic method of designing arrays of angled and displaced slots (hereinafter "compound slots"), defined in 1971 as one of the challenges to overcome in the world of antenna design. The used technique is based on the Method of Moments, Circuit Theory and the Theory of Scattering Matrices Connection. Being a circuitry-based method, the first part of this dissertation corresponds to the study of the applicability of the basic equivalent networks, their ability to recreate the slot physical phenomena, their limitations and advantages presented to characterize different compound slot configurations. It delves into the differences of T and ! and determines the selection of the most suitable one depending on the type of radiating element. Once the type of network to be used in the system design is selected, a progressive algorithm called Forward Matching Procedure has been developed to connect the proper equivalent networks from the feeder port to shorted ending. This algorithm is independent of the number of elements, the central operating frequency, the angle of inclination of the slots and selected equivalent network (T or ! networks). It is based on the definition of the array design as a Constraint Satisfaction Problem, solved by means of a Backtracking Algorithm. As a result, the method returns an equivalent circuit of the whole array which is matched at its input port and whose elements consume a power according to a given amplitude distribution for the array. In any group of antennas, the mutual coupling between elements through the radiated field represents one of the biggest problems that the engineer faces and its effects are detrimental to the overall performance of the system, both in radiation capabilities and return loss. The employment of an equivalent circuit for the array design was discarded by some authors because of the difficulty involved in the characterization of the coupling effects and their inclusion in the design stage. In this thesis the coupling has also been modeled as an equivalent network whose elements are ideal transformers and admittances connected to the set of equivalent networks that represent the antennas of the array. By comparing the estimated results in terms of return loss and radiation with those obtained from popular commercial software as CST Microwave Studio, the validity of the proposed method is fully confirmed, representing the first method of systematic design of compound-slot arrays fed by rectangular waveguide. Since these slots do not work under the resonant status, the bandwidth in return loss is much wider than the longitudinal-slot arrays. For the case of two-dimensional arrays, the angle of inclination can be adjusted so that the field is polarized at the low side-lobe level plane. Besides the performed full-wave simulations two prototypes of six and ten elements for the X-band have been designed, built and measured, revealing excellent results and agreement with the expected results. These facts certify that the genuine technique Method of Moments - Matching Forward Procedure developed along this thesis is valid and trustable.

Development of a Uniform Theory of Diffraction for Scattered and Surface Electromagnetic Field Analysis on a Cylinder

Con esta tesis ”Desarrollo de una Teoría Uniforme de la Difracción para el Análisis de los Campos Electromagnéticos Dispersados y Superficiales sobre un Cilindro” hemos iniciado una nueva línea de investigación que trata de responder a la siguiente pregunta: ¿cuál es la impedancia de superficie que describe una estructura de conductor eléctrico perfecto (PEC) convexa recubierta por un material no conductor? Este tipo de estudios tienen interés hoy en día porque ayudan a predecir el campo electromagnético incidente, radiado o que se propaga sobre estructuras metálicas y localmente convexas que se encuentran recubiertas de algún material dieléctrico, o sobre estructuras metálicas con pérdidas, como por ejemplo se necesita en determinadas aplicaciones aeroespaciales, marítimas o automovilísticas. Además, desde un punto de vista teórico, la caracterización de la impedancia de superficie de una estructura PEC recubierta o no por un dieléctrico es una generalización de varias soluciones que tratan ambos tipos de problemas por separado. En esta tesis se desarrolla una teoría uniforme de la difracción (UTD) para analizar el problema canónico del campo electromagnético dispersado y superficial en un cilindro circular eléctricamente grande con una condición de contorno de impedancia (IBC) para frecuencias altas. Construir una solución basada en UTD para este problema canónico es crucial en el desarrollo de un método UTD para el caso más general de una superficie arbitrariamente convexa, mediante el uso del principio de localización de los campos electromagnéticos a altas frecuencias. Esta tesis doctoral se ha llevado a cabo a través de una serie de hitos que se enumeran a continuación, enfatizando las contribuciones a las que ha dado lugar. Inicialmente se realiza una revisión en profundidad del estado del arte de los métodos asintóticos con numerosas referencias. As í, cualquier lector novel puede llegar a conocer la historia de la óptica geométrica (GO) y la teoría geométrica de la difracción (GTD), que dieron lugar al desarrollo de la UTD. Después, se investiga ampliamente la UTD y los trabajos más importantes que pueden encontrarse en la literatura. As í, este capítulo, nos coloca en la posición de afirmar que, hasta donde nosotros conocemos, nadie ha intentado antes llevar a cabo una investigación rigurosa sobre la caracterización de la impedancia de superficie de una estructura PEC recubierta por un material dieléctrico, utilizando para ello la UTD. Primero, se desarrolla una UTD para el problema canónico de la dispersión electromagnética de un cilindro circular eléctricamente grande con una IBC uniforme, cuando es iluminado por una onda plana con incidencia oblicua a frecuencias altas. La solución a este problema canónico se construye a partir de una solución exacta mediante una expansión de autofunciones de propagación radial. Entonces, ésta se convierte en una nueva expansión de autofunciones de propagación circunferencial muy apropiada para cilindros grandes, a través de la transformación de Watson. De esta forma, la expresión del campo se reduce a una integral que se evalúa asintóticamente, para altas frecuencias, de manera uniforme. El resultado se expresa según el trazado de rayos descrito en la UTD. La solución es uniforme porque tiene la importante propiedad de mantenerse continua a lo largo de la región de transición, a ambos lados de la superficie del contorno de sombra. Fuera de la región de transición la solución se reduce al campo incidente y reflejado puramente ópticos en la región iluminada del cilindro, y al campo superficial difractado en la región de sombra. Debido a la IBC el campo dispersado contiene una componente contrapolar a causa de un acoplamiento entre las ondas TEz y TMz (donde z es el eje del cilindro). Esta componente contrapolar desaparece cuando la incidencia es normal al cilindro, y también en la región iluminada cuando la incidencia es oblicua donde el campo se reduce a la solución de GO. La solución UTD presenta una muy buena exactitud cuando se compara numéricamente con una solución de referencia exacta. A continuación, se desarrolla una IBC efectiva para el cálculo del campo electromagnético dispersado en un cilindro circular PEC recubierto por un dieléctrico e iluminado por una onda plana incidiendo oblicuamente. Para ello se derivan dos impedancias de superficie en relación directa con las ondas creeping y de superficie TM y TE que se excitan en un cilindro recubierto por un material no conductor. Las impedancias de superficie TM y TE están acopladas cuando la incidencia es oblicua, y dependen de la geometría del problema y de los números de onda. Además, se ha derivado una impedancia de superficie constante, aunque con diferente valor cuando el observador se encuentra en la zona iluminada o en la zona de sombra. Después, se presenta una solución UTD para el cálculo de la dispersión de una onda plana con incidencia oblicua sobre un cilindro eléctricamente grande y convexo, mediante la generalización del problema canónico correspondiente al cilindro circular. La solución asintótica es uniforme porque se mantiene continua a lo largo de la región de transición, en las inmediaciones del contorno de sombra, y se reduce a la solución de rayos ópticos en la zona iluminada y a la contribución de las ondas de superficie dentro de la zona de sombra, lejos de la región de transición. Cuando se usa cualquier material no conductor se excita una componente contrapolar que tiende a desaparecer cuando la incidencia es normal al cilindro y en la región iluminada. Se discuten ampliamente las limitaciones de las fórmulas para la impedancia de superficie efectiva, y se compara la solución UTD con otras soluciones de referencia, donde se observa una muy buena concordancia. Y en tercer lugar, se presenta una aproximación para una impedancia de superficie efectiva para el cálculo de los campos superficiales en un cilindro circular conductor recubierto por un dieléctrico. Se discuten las principales diferencias que existen entre un cilindro PEC recubierto por un dieléctrico desde un punto de vista riguroso y un cilindro con una IBC. Mientras para un cilindro de impedancia se considera una impedancia de superficie constante o uniforme, para un cilindro conductor recubierto por un dieléctrico se derivan dos impedancias de superficie. Estas impedancias de superficie están asociadas a los modos de ondas creeping TM y TE excitadas en un cilindro, y dependen de la posición y de la orientación del observador y de la fuente. Con esto en mente, se deriva una solución UTD con IBC para los campos superficiales teniendo en cuenta las dependencias de la impedancia de superficie. La expansión asintótica se realiza, mediante la transformación de Watson, sobre la representación en serie de las funciones de Green correspondientes, evitando as í calcular las derivadas de orden superior de las integrales de tipo Fock, y dando lugar a una solución rápida y precisa. En los ejemplos numéricos realizados se observa una muy buena precisión cuando el cilindro y la separación entre el observador y la fuente son grandes. Esta solución, junto con el método de los momentos (MoM), se puede aplicar para el cálculo eficiente del acoplamiento mutuo de grandes arrays conformados de antenas de parches. Los métodos propuestos basados en UTD para el cálculo del campo electromagnético dispersado y superficial sobre un cilindro PEC recubierto de dieléctrico con una IBC efectiva suponen un primer paso hacia la generalización de una solución UTD para superficies metálicas convexas arbitrarias cubiertas por un material no conductor e iluminadas por una fuente electromagnética arbitraria. ABSTRACT With this thesis ”Development of a Uniform Theory of Diffraction for Scattered and Surface Electromagnetic Field Analysis on a Cylinder” we have initiated a line of investigation whose goal is to answer the following question: what is the surface impedance which describes a perfect electric conductor (PEC) convex structure covered by a material coating? These studies are of current and future interest for predicting the electromagnetic (EM) fields incident, radiating or propagating on locally smooth convex parts of highly metallic structures with a material coating, or by a lossy metallic surfaces, as for example in aerospace, maritime and automotive applications. Moreover, from a theoretical point of view, the surface impedance characterization of PEC surfaces with or without a material coating represents a generalization of independent solutions for both type of problems. A uniform geometrical theory of diffraction (UTD) is developed in this thesis for analyzing the canonical problem of EM scattered and surface field by an electrically large circular cylinder with an impedance boundary condition (IBC) in the high frequency regime, by means of a surface impedance characterization. The construction of a UTD solution for this canonical problem is crucial for the development of the corresponding UTD solution for the more general case of an arbitrary smooth convex surface, via the principle of the localization of high frequency EM fields. The development of the present doctoral thesis has been carried out through a series of landmarks that are enumerated as follows, emphasizing the main contributions that this work has given rise to. Initially, a profound revision is made in the state of art of asymptotic methods where numerous references are given. Thus, any reader may know the history of geometrical optics (GO) and geometrical theory of diffraction (GTD), which led to the development of UTD. Then, the UTD is deeply investigated and the main studies which are found in the literature are shown. This chapter situates us in the position to state that, as far as we know, nobody has attempted before to perform a rigorous research about the surface impedance characterization for material-coated PEC convex structures via UTD. First, a UTD solution is developed for the canonical problem of the EM scattering by an electrically large circular cylinder with a uniform IBC, when it is illuminated by an obliquely incident high frequency plane wave. A solution to this canonical problem is first constructed in terms of an exact formulation involving a radially propagating eigenfunction expansion. The latter is converted into a circumferentially propagating eigenfunction expansion suited for large cylinders, via the Watson transformation, which is expressed as an integral that is subsequently evaluated asymptotically, for high frequencies, in a uniform manner. The resulting solution is then expressed in the desired UTD ray form. This solution is uniform in the sense that it has the important property that it remains continuous across the transition region on either side of the surface shadow boundary. Outside the shadow boundary transition region it recovers the purely ray optical incident and reflected ray fields on the deep lit side of the shadow boundary and to the modal surface diffracted ray fields on the deep shadow side. The scattered field is seen to have a cross-polarized component due to the coupling between the TEz and TMz waves (where z is the cylinder axis) resulting from the IBC. Such cross-polarization vanishes for normal incidence on the cylinder, and also in the deep lit region for oblique incidence where it properly reduces to the GO or ray optical solution. This UTD solution is shown to be very accurate by a numerical comparison with an exact reference solution. Then, an effective IBC is developed for the EM scattered field on a coated PEC circular cylinder illuminated by an obliquely incident plane wave. Two surface impedances are derived in a direct relation with the TM and TE surface and creeping wave modes excited on a coated cylinder. The TM and TE surface impedances are coupled at oblique incidence, and depend on the geometry of the problem and the wave numbers. Nevertheless, a constant surface impedance is found, although with a different value when the observation point lays in the lit or in the shadow region. Then, a UTD solution for the scattering of an obliquely incident plane wave on an electrically large smooth convex coated PEC cylinder is introduced, via a generalization of the canonical circular cylinder problem. The asymptotic solution is uniform because it remains continuous across the transition region, in the vicinity of the shadow boundary, and it recovers the ray optical solution in the deep lit region and the creeping wave formulation within the deep shadow region. When a coating is present a cross-polar field term is excited, which vanishes at normal incidence and in the deep lit region. The limitations of the effective surface impedance formulas are discussed, and the UTD solution is compared with some reference solutions where a very good agreement is met. And in third place, an effective surface impedance approach is introduced for determining surface fields on an electrically large coated metallic circular cylinder. Differences in analysis of rigorouslytreated coated metallic cylinders and cylinders with an IBC are discussed. While for the impedance cylinder case a single constant or uniform surface impedance is considered, for the coated metallic cylinder case two surface impedances are derived. These are associated with the TM and TE creeping wave modes excited on a cylinder and depend on observation and source positions and orientations. With this in mind, a UTD based method with IBC is derived for the surface fields by taking into account the surface impedance variation. The asymptotic expansion is performed, via the Watson transformation, over the appropriate series representation of the Green’s functions, thus avoiding higher-order derivatives of Fock-type integrals, and yielding a fast and an accurate solution. Numerical examples reveal a very good accuracy for large cylinders when the separation between the observation and the source point is large. Thus, this solution could be efficiently applied in mutual coupling analysis, along with the method of moments (MoM), of large conformal microstrip array antennas. The proposed UTD methods for scattered and surface EM field analysis on a coated PEC cylinder with an effective IBC are considered the first steps toward the generalization of a UTD solution for large arbitrarily convex smooth metallic surfaces covered by a material coating and illuminated by an arbitrary EM source.

Broadband active differential array for the mid-frequency SKA band

This paper presents the design and characterization process of an active array demonstrator for the mid-frequency range (i.e., 300 MHz-1000 MHz) of the future Square Kilometre Array (SKA) radio telescope. This demonstrator, called FIDA3 (FG-IGN: Fundación General Instituto Geográfico Nacional - Differential Active Antenna Array), is part of the Spanish contribution for the SKA project. The main advantages provided by this design include the use of a dielectric-free structure, and the use of a fully-differential receiver in which differential low-noise amplifiers (LNAs) are directly connected to the balanced tapered-slot antennas (TSAs). First, the radiating structure and the differential low-noise amplifiers were separately designed and measured, obtaining good results (antenna elements with low voltage standing-wave ratios, array scanning capabilities up to 45°, and noise temperatures better than 52 K with low-noise amplifiers at room temperature). The potential problems due to the differential nature of the proposed solution are discussed, so some effective methods to overcome such limitations are proposed. Second, the complete active antenna array receiving system was assembled, and a 1 m2 active antenna array tile was characterized.

Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications

El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.

Molecular heterogeneity of progenitors and radial migration in the developing cerebral cortex revealed by transgene expression.

We have analyzed the developmental pattern of beta-galactosidase (beta-gal) expression in the cerebral cortex of the beta 2nZ3'1 transgenic mouse line, which was generated using regulatory elements of the beta 2-microglobulin gene and shows ectopic expression in nervous tissue. From embryonic day 10 onward, beta-gal was expressed in the medial and dorsal cortices, including the hippocampal region, whereas lateral cortical areas were devoid of labeling. During the period of cortical neurogenesis (embryonic days 11-17), beta-gal was expressed by selective precursors in the proliferative ventricular zone of the neocortex and hippocampus, as well as by a number of migrating and postmigratory neurons arranged into narrow radial stripes above the labeled progenitors. Thus, the transgene labels a subset of cortical progenitors and their progeny. Postnatally, radial clusters of beta-gal-positive neurons were discernible until postpartum day 10. At this age, the clusters were 250 to 500 microns wide, composed of neurons spanning all the cortical layers and exhibiting several neuronal phenotypes. These data suggest molecular heterogeneity of cortical progenitors and of the cohorts of postmitotic neurons originating from them, which implies intrinsic molecular mosaicism in both cortical progenitors and developing neurons. Furthermore, the data show that neurons committed to the expression of the transgene migrate along very narrow, radial stripes.

Conditional transformation of a pancreatic beta-cell line derived from transgenic mice expressing a tetracycline-regulated oncogene.

Conditional oncogene expression in transgenic mice is of interest for studying the oncoprotein requirements during tumorigenesis and for deriving cell lines that can be induced to undergo growth arrest and enhance their differentiated functions. We utilized the bacterial tetracycline (Tet)-resistance operon regulatory system (tet) from Tn10 of Escherichia coli to control simian virus 40 (SV40) large tumor (T) antigen (TAg) gene expression and to generate conditionally transformed pancreatic beta cells in transgenic mice. A fusion protein containing the tet repressor (tetR) and the activating domain of the herpes simplex virus protein VP16, which converts the repressor into a transcription activator, was produced in beta cells of transgenic mice under control of the insulin promoter. In a separate lineage of transgenic mice, the TAg gene was introduced under control of a tandem array of tet operator sequences and a minimal promoter, which by itself is not sufficient for gene expression. Mice from the two lineages were then crossed to generate double-transgenic mice. Expression of the tetR fusion protein in beta cells activated TAg transcription, resulting in the development of beta-cell tumors. Tumors arising in the absence of Tet were cultured to derive a stable beta-cell line. Cell incubation in the presence of Tet led to inhibition of proliferation, as shown by decreased BrdUrd and [3H]thymidine incorporation. The Tet derivative anhydrotetracycline showed a 100-fold stronger inhibition compared with Tet. When administered in vivo, Tet efficiently inhibited beta-cell proliferation. These findings indicate that transformed beta cells selected for growth during a tumorigenesis process in vivo maintain a dependence on the continuous presence of the TAg oncoprotein for their proliferation. This system provides an approach for generation of beta-cell lines for cell therapy of diabetes as well as conditionally transformed cell lines from other cell types of interest.

Chromospheric activity and rotation of FGK stars in the solar vicinity. An estimation of the radial velocity jitter

Context. Chromospheric activity produces both photometric and spectroscopic variations that can be mistaken as planets. Large spots crossing the stellar disc can produce planet-like periodic variations in the light curve of a star. These spots clearly affect the spectral line profiles, and their perturbations alter the line centroids creating a radial velocity jitter that might “contaminate” the variations induced by a planet. Precise chromospheric activity measurements are needed to estimate the activity-induced noise that should be expected for a given star. Aims. We obtain precise chromospheric activity measurements and projected rotational velocities for nearby (d ≤ 25 pc) cool (spectral types F to K) stars, to estimate their expected activity-related jitter. As a complementary objective, we attempt to obtain relationships between fluxes in different activity indicator lines, that permit a transformation of traditional activity indicators, i.e., Ca II H & K lines, to others that hold noteworthy advantages. Methods. We used high resolution (~50 000) echelle optical spectra. Standard data reduction was performed using the IRAF ECHELLE package. To determine the chromospheric emission of the stars in the sample, we used the spectral subtraction technique. We measured the equivalent widths of the chromospheric emission lines in the subtracted spectrum and transformed them into fluxes by applying empirical equivalent width and flux relationships. Rotational velocities were determined using the cross-correlation technique. To infer activity-related radial velocity (RV) jitter, we used empirical relationships between this jitter and the R’_HK index. Results. We measured chromospheric activity, as given by different indicators throughout the optical spectra, and projected rotational velocities for 371 nearby cool stars. We have built empirical relationships among the most important chromospheric emission lines. Finally, we used the measured chromospheric activity to estimate the expected RV jitter for the active stars in the sample.

On the Radial Onset of Clumping in the Wind of the B0I Massive Star QV Nor

We present an analysis of a 78 ks Chandra high-energy transmission gratings observation of the B0I star QV Nor, the massive donor of the wind-accreting pulsar 4U1538−52. The neutron star (NS) orbits its companion in a very close orbit (r < 1.4R*, in units of the stellar radii), thereby allowing probing of the innermost wind regions. The flux of the Fe Kα line during eclipse reduces to only ∼30% of the flux measured out of eclipse. This indicates that the majority of Fe fluorescence must be produced in regions close to the NS, at distances smaller than 1R* from its surface. The fact that the flux of the continuum decreases to only ∼3% during eclipse allows for a high contrast of the Fe Kα line fluorescence during eclipse. The line is not resolved and centered at 1.9368 0.0018 l = 0.0032 - + Å. From the inferred plasma speed limit of v < c l < 800 l D km s−1 and range of ionization parameters of log 1, 2 x = [- ], together with the stellar density profile, we constrain the location of the cold, dense material in the stellar wind of QV Nor using simple geometrical considerations. We then use the Fe Kα line fluorescence as a tracer of wind clumps and determine that these clumps in the stellar wind of QV Nor (B0I) must already be present at radii r < 1.25R*, close to the photosphere of the star.

Australia Telescope Compact Array H I observations of the NGC 6845 galaxy group

We present the results of Australia Telescope Compact Array (ATCA) H i line and 20-cm radio continuum observations of the galaxy quartet NGC 6845. The H i emission extends over all four galaxies but can only be associated clearly with the two spiral galaxies, NGC 6845A and B, which show signs of strong tidal interaction. We derive a total H i mass of at least 1.8 x 10(10) M-., most of which is associated with NGC 6845A, the largest galaxy of the group. We investigate the tidal interaction between NGC 6845A and B by studying the kinematics of distinct H i components and their relation to the known H ii regions. No H i emission is detected from the two lenticular galaxies, NGC 6845C and D. A previously uncatalogued dwarf galaxy, ATCA J2001-4659, was detected 4.4 arcmin NE from NGC 6845B and has an H i mass of similar to5 x 10(8) M-.. No H i bridge is visible between the group and its newly detected companion. Extended 20-cm radio continuum emission is detected in NGC 6845A and B as well as in the tidal bridge between the two galaxies. We derive star formation rates of 15-40 M-. yr(-1).

Reducing the height of a circular array of monopoles using top hats and dielectric coatings

Using a Radial Guide Field Matching Method, an investigation is performed into reducing the height of an electronically steered circular array of monopole antennas composed of a central active element surrounded by passive elements being either short- or open-circuited. It is shown that a considerable height reduction can be achieved using top hats attached to monopoles ends and by applying dielectric coating underneath the top hats. The trade-off in achieving height reduction is narrower impedance bandwidth.

A switched-beam antenna of monopoles housed in a radial guide with transition to free space

The design of a switched-beam antenna formed by a circular array of monopoles housed inside a radial guide with a transition to free space is presented. Two alternative types of transitions to free space, one using a truncated conducting cone and the other created by a tapered dielectric material at the edge of the radial guide, are described. The use of the radial guide with transition increases the return-loss bandwidth of the array and enables shaping its beam in elevation. (C) 2004 Wiley Periodicals, Inc.

Effect of line of sight propagation on capacity of an indoor MIMO system

In this paper the performance of a multiple input multiple output (MIMO) wireless communication system operating in an indoor environment, featuring both line of sight (LOS) and non-line of sight (NLOS) signal propagation, is assessed. In the model the scattering objects are assumed to be uniformly distributed in an area surrounding the transmitting and receiving array antennas. Mutual coupling effects in the arrays are treated in an exact manner. However interactions with scattering objects are taken into account via a single bounce approach. Computer simulations are carried out for the system capacity for varying inter-element spacing in the receiving array for assumed values of LOS/NLOS power fraction and signal to noise ratio (SNR).

Fibre grating time delay element for phased array antennas

The authors have demonstrated an optical fibre grating based delay line which produces time delays in increments as small as 31 ps. The device could provide a true time delay component for a phased array antenna