Phase separation of PS/PVME blend films induced by capillary force

The phase behavior of a miscible PS/PVME (80/20, w/w) blend film in a confined geometry has been investigated at the annealing temperature much lower than the low critical solution temperature (LCST) of the blend. When the annealing temperature (52degreesC) is near the glass transition temperature of the blend (51.2degreesC), PVME-rich phase at the air-film surface under a microchannel forms smaller protrusion. When the annealing temperature is increased to 70degreesC, the protruding stripes, which are almost developed, are mainly composed of the mobile PVME-rich phase. These results reveal that the capillary force lead to the enrichment of PVME-rich phase at the air-polymer interface of a PDMS microchannel, that is, the capillary force lithography (CFL) can induce the phase separation of PS/PVME blend films.

Annealing effects on the surface morphologies of thin PS/PMMA blend films with different film thickness

The surface morphology evolution of three thin polystyrene (PS)/polymethyl methacrylate (PMMA) blend films (<70 nm) on SiOx substrates upon annealing were investigated by atomic force microscopy (AFM) and some interesting phenomena were observed. All the spin-coated PS/PMMA blend films were not in thermodynamic equilibrium. For the 67.1 and the 27.2 nm PS/PMMA blend films, owing to the low mobility of the PMMA-rich phase layer at substrate surfaces and interfacial stabilization caused by long-range van der Waals forces of the substrates, the long-lived metastable surface morphologies (the foam-like and the bicontinuous morphologies) were first observed. For the two-dimensional ultrathin PS/PMMA blend film (16.3 nm), the discrete domains of the PS-rich phases upon the PMMA-rich phase layer formed and the secondary phase separation occurred after a longer annealing time.

Surface morphology control of immiscible polymer-blend thin films

The effects of the molecular weights (molecular weight of polystyrene, M-w,M-PS, varying from 2.9 to 129 k) on the surface morphologies of spin-coated and annealed polystyrene/poly (methyl methacrylate) (PS/PMMA = 50/50, w/w) blend films were investigated by atomic force microscopy and X-ray photoelectron spectroscopy. For the spin-coated films, when the M-w,M-PS varied from 2.9 to 129 k, three different kinds of surface morphologies (a nanophase-separated morphology, a PMMA cellular or network-like morphology whose meshes filled with PS, a sea-island like morphology) were observed and their formation mechanisms are discussed, respectively. Upon annealing, two different morphology-evolution processes were observed. It is found that a upper PS-rich phase layer is formed when M-w,M-PS < 4 k, and this behavior is mainly attributed to the low interfacial tension between PS and PMMA component. When M-w,M-PS > 4 k, the PS-rich phase forms droplets on top of the PMMA-rich phase layer which wets the SiOx substrate. These results indicate that the surface morphology of the polymer blend films can be controlled by the polymer molecular weight and annealing conditions.

WATER-SOLUBLE AND AMPHIPHILIC POLYMERS .6. A STUDY ON THE SURFACE-COMPOSITION OF CAST FILMS OF PST/PMAA AND PEO-PST-PEO BLOCK POLYMERS BY XPS

Thin films of PSt/PMAA and PEO-PSt-PEO block polymers were deposited on a polystyrene substrate by solution adsorption (with or without solvent treatment), and the film surfaces were characterized by means of XPS. Direct solvent - casting of PEO-PSt-PEO from benzene solutions resulted in PSt-rich surfaces, whereas PMAA richer surfaces were obtained for PSt/PMAA films cast from DMF solutions. Moreover, solvent treatment after casting had profound effect on the film surface composition. Treatment with water markedly increased the surface concentration of polar PEO segments. In the case of PSt-PMAA block polymers, the PSt content on the surface increased in the order of water < ethanol < cyclohexane < petroleum ether, the last-named giving films with almost pure PSt surface. It is well worth noticing that the bulk composition had little to do with the surface composition for both PSt/PMAA and PEO-PSt-PEO block polymers within the composition range investigated when subsequent solvent treatment was applied.

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2

Alanine-rich amphiphilic peptide containing the RGD cell adhesion motif: a coating material for human fibroblast attachment and culture

We studied the self-assembly of peptide A6RGD (A: alanine, R: arginine, G: glycine, D: aspartic acid) in water, and the use of A6RGD substrates as coatings to promote the attachment of human cornea stromal fibroblasts (hCSFs). The self-assembled motif of A6RGD was shown to depend on the peptide concentration in water, where both vesicle and fibril formation were observed. Oligomers were detected for 0.7 wt% A6RGD, which evolved into short peptide fibres at 1.0 wt% A6RGD, while a co-existence of vesicles and long peptide fibres was revealed for 2–15 wt% A6RGD. A6RGD vesicle walls were shown to have a multilayer structure built out of highly interdigitated A6 units, while A6RGD fibres were based on β-sheet assemblies. Changes in the self-assembly motif with concentration were reflected in the cell culture assay results. Films dried from 0.1–1.0 wt% A6RGD solutions allowed hCSFs to attach and significantly enhanced cell proliferation relative to the control. In contrast, films dried from 2.5 wt% A6RGD solutions were toxic to hCSFs.

Raman spectroscopy analysis of structural photoinduced changes in GeS(2) + Ga(2)O(3) thin films

Photoexpansion and photobleaching effects have been observed in amorphous GeS(2) + Ga(2)O(3) (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds` breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.

Amylopectin-rich starch plasticized with glycerol for polymer electrolyte application

This paper describes the preparation and characterization of a solid polymer electrolyte based on amylopectin-rich starch plasticized with glycerol. The samples were characterized through ionic conductivity (sigma) measurements, scanning electron microscopy, thermal analysis, and spectroscopy in the UV-Vis-NIR region. The results showed that the highest sigma (1.1 x 10(-4) Scm(-1) at 30 degrees C) was obtained for the sample with n = [O]/[Li] = 6.5 ratio. In addition, the samples plasticized with 30-35 wt.% of glycerol presented high ionic conductivity, transparency and conduction stability. The ionic conductivity measurements as a function of lithium salt contents showed a maximum for n=6.5. The ionic conductivity as a function of time for amylopectin-rich starch plasticized with 30 wt.% of glycerol and containing [O]/[Li] = 10 showed conduction stability over 6 months (sigma similar to 3.01 x 10(-5) S cm(-1)). (C) 2010 Elsevier B.V. All rights reserved.

Columnar microstructure of nanocrystalline Ga1-xMnxN films deposited by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The influence of thermal treatment on the preparation of PNM and PMN-PT thin films

Ferroelectric thin films belong to a class of materials with great technological importance in optic fibers, micro-electromechanical systems, and microprocessors and computers memories.The (1-x)PbMg1/3Nb2/3O3(x)PbTiO3 (PMN-PT) thin films, with x=0, 0.1, 0.35 and 0.5, were prepared by Pechini's process and deposited by spin-coating on Si(100), Pt/Ti/SiO2/Si(100) and quartz substrates. The goal of the present paper is to verify the thermal treatment influence on the perovskite phase formation, which is desirable for these applications. The phase formation was analyzed by X-ray diffraction. The film's surface was characterized by atomic force microscopy to analyze the roughness and the homogeneity. The results of this study indicate that the optimum conditions for obtaining the perovskite phase using a Pt/Ti/SiO2/Si(100) substrate, were drying each deposited layer at 140 degreesC (heating plate), and a final thermal treatment at 600 degreesC for 3 h in a closed system with a lead-rich atmosphere. (C) 2003 Elsevier B.V. All rights reserved.

Structural and vibrational analysis of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering

The structural and vibrational properties of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering were analyzed in a wide composition range (0 < x < 0.18). The films were structurally characterized using x-ray diffraction with Rietveld refinement. The corresponding vibrational properties were investigated using micro-Raman and Fourier transform infrared spectroscopies. The films present a high crystallized fraction, crystallites having wurtzite structure, and high orientation texture with the c axis oriented perpendicular to the substrate surface. Rietveld analysis indicates that Mn atoms are incorporated substitutionally into Ga positions and show that the ionic character of cation-N bonds along the c axis is favored by the Mn incorporation. No evidence for Mn segregation or Mn rich phases was found in the composition range analyzed. Micro-Raman scattering spectra and infrared absorption experiments showed progressive changes with the increase of x and monotonic shifts of the GaN TO and LO peaks to lower frequencies. The structural and vibrational analyses are compared and the influence of Mn on the static and dynamic properties of the lattice is analyzed. (C) 2007 American Institute of Physics.

Stoichiometry unbalance and photoluminescence emission in Ga1-XAsX films prepared by flash evaporation

Both narrow and broad photoluminescence bands were observed in Ga1-XAsX films prepared by flash evaporation of polycrystalline GaAs containing native C impurities. The observed narrow crystalline-like bands are similar to band-to-band and C acceptor impurity emissions in crystalline GaAs. The narrow bands are evidence that the As excess favors the PL active GaAs crystallite formation in films deposited onto silicon (10 0) substrate, even when the As excess is very large (X = 0.84). This favoring is not observed in twin samples grown on silica glass substrates nor on Ga rich samples, indicating the important role of the combined effect of the As excess and Si substrate in the GaAs crystallite formation. The broad amorphous-like bands were observed in Ga rich and in moderately As rich samples. The photoluminescence emission is compared with the microstructure of the material as determined from the micro-Raman, absorption edge and reflectance measurements. The volume fraction of the crystallites formed is small and PL emission indicates that the crystallite electronic quality is much better than the ones formed heat treating films grown on silica glass substrates. (C) 2004 Elsevier B.V. All rights reserved.

Electrodeposited thin mercury films on Pt-Ir alloy electrodes

Mercury thin films prepared by electrochemical deposition on Pt-Ir alloy and after partial removing of mercury at different temperatures were studied by means of an interferometric surface mapping microscope and by X-ray photoelectronic spectroscopy. Mercury film samples having mercury partially removed by anodic stripping at a potential more positive than the corresponding peak in the voltammogram were also studied using the same techniques. For blank samples the surface topographic studies showed well defined grain boundaries. Mercury film samples when heated up to different temperatures showed as material is removed and that the surface roughness decreases as the temperature increases. For samples heated up to 800 degrees C the surface roughness is approximately the same that for the blank. A model for the interphase of volumetric mercury electrodeposited on a Pt-Ir alloy has been proposed using samples both electrochemically and thermally removed of their Hg coatings. The model includes a layered three-region structure, containing at least two Pt-Hg intermetallics: PtHg4 and PtHg2. A substrate modified region, iridium rich, has also been detected. (C) 1999 Elsevier B.V. S.A. All rights reserved.

Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films

Photoexpansion and photobleaching effects have been observed in amorphous GeS2 + Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds' breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.

Urbach energy parameter of flash evaporated amorphous gallium arsenide films

The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from photothermal deflection spectroscopy (PDS), presents large correlated variations with crucible temperature. The optical and electrical results are consistent with the As under coordinated sites being the more important defect in the material. © 2002 Elsevier Science B.V. All rights reserved.