Self-assembly of a nanoscopic platinum(II) double square cage

Self-assembly of a rigid tripyridyl linker with a bidentate 90 degrees Pt(II) acceptor yielded a somewhat unusual double square cage, representing the first example of Pt(II) cage of such shape. Multinuclear NMR as well as single-crystal structure analysis characterized the cage.

Cilengitide combined with cetuximab and platinum-based chemotherapy as first-line treatment in advanced non-small-cell lung cancer (NSCLC) patients: Results of an open-label, randomized, controlled phase II study (CERTO)

Background: This multicentre, open-label, randomized, controlled phase II study evaluated cilengitide in combination with cetuximab and platinum-based chemotherapy, compared with cetuximab and chemotherapy alone, as first-line treatment of patients with advanced non-small-cell lung cancer (NSCLC). Patients and methods: Patients were randomized 1:1:1 to receive cetuximab plus platinum-based chemotherapy alone (control), or combined with cilengitide 2000 mg 1×/week i.v. (CIL-once) or 2×/week i.v. (CIL-twice). A protocol amendment limited enrolment to patients with epidermal growth factor receptor (EGFR) histoscore ≥200 and closed the CIL-twice arm for practical feasibility issues. Primary end point was progression-free survival (PFS; independent read); secondary end points included overall survival (OS), safety, and biomarker analyses. A comparison between the CIL-once and control arms is reported, both for the total cohorts, as well as for patients with EGFR histoscore ≥200. Results: There were 85 patients in the CIL-once group and 84 in the control group. The PFS (independent read) was 6.2 versus 5.0 months for CIL-once versus control [hazard ratio (HR) 0.72; P = 0.085]; for patients with EGFR histoscore ≥200, PFS was 6.8 versus 5.6 months, respectively (HR 0.57; P = 0.0446). Median OS was 13.6 for CIL-once versus 9.7 months for control (HR 0.81; P = 0.265). In patients with EGFR ≥200, OS was 13.2 versus 11.8 months, respectively (HR 0.95; P = 0.855). No major differences in adverse events between CIL-once and control were reported; nausea (59% versus 56%, respectively) and neutropenia (54% versus 46%, respectively) were the most frequent. There was no increased incidence of thromboembolic events or haemorrhage in cilengitide-treated patients. αvβ3 and αvβ5 expression was neither a predictive nor a prognostic indicator. Conclusions: The addition of cilengitide to cetuximab/chemotherapy indicated potential clinical activity, with a trend for PFS difference in the independent-read analysis. However, the observed inconsistencies across end points suggest additional investigations are required to substantiate a potential role of other integrin inhibitors in NSCLC treatment.

On the low temperature deformation mechanism in polycrystalline cadmium

The thermally activated plastic flow of polycrystalline cadmium was investigated by differentialstress creep tests at 86°K and tensile tests in the temperature range 86°–473°K. The activation energy (0.55 eV) at zero effective stress and the activation volume as a function of effective stress were obtained. It is concluded that intersection of glide and forest dislocations becomes rate controlling for low temperature deformation. The approximate stacking-fault width in cadmium is deduced to be “1.5b”.

Low-temperature deformation behaviour of polycrystalline copper

Low-temperature plastic flow in copper was investigated by studying its tensile and creep deformation characteristics. The dependence of the flow stress on temperature and strain rate was used to evaluate the thermal activation energy while the activation area was derived from the change-in-stress creep experiments. A value of 0.6 eV was obtained for the total obstacle energy both in electrolytic and commerical copper. The activation areas in copper of three selected purities fell in the range 1200 to 100 b2. A forest intersection mechanism seems to control the temperature dependent part of the flow stress. The increase in the athermal component of the flow stress with impurity content in copper is attributed to a change in the dislocation density. The investigation also revealed that thermal activation of some attractive junctions also takes place during low-temperature creep. The model of attractive junction formation on a stress decrement during creep, yields a value of 45±10 ergs cm-2 for the stacking fault energy in copper.

Numerical simulations of crack tip fields in polycrystalline plastic solids

In this paper, modes I and II crack tip fields in polycrystalline plastic solids are studied under plane strain, small scale yielding conditions. Two different initial textures of an Al–Mg alloy, viz., continuous cast AA5754 sheets in the recrystallized and cold rolled conditions, are considered. The former is nearly-isotropic, while the latter displays distinct anisotropy. Finite element simulations are performed by employing crystal plasticity constitutive equations along with a Taylor-type homogenization as well as by using the Hill quadratic yield theory. It is found that significant texture evolution occurs close to the notch tip which profoundly influences the stress and plastic strain distributions. Also, the cold rolling texture gives rise to higher magnitude of plastic strain near the tip.

Numerical simulations of crack tip fields in polycrystalline plastic solids

In this paper, modes I and II crack tip fields in polycrystalline plastic solids are studied under plane strain, small scale yielding conditions. Two different initial textures of an Al-Mg alloy, viz.,continuous cast AA5754 sheets in the recrystallized and cold rolled conditions, are considered. The former is nearly-isotropic, while the latter displays distinct anisotropy. Finite element simulations are performed by employing crystal plasticity constitutive equations along with a Taylor-type homogenization as well as by using the Hill quadratic yield theory. It is found that significant texture evolution occurs close to the notch tip which profoundly influences the stress and plastic strain distributions. Also, the cold rolling texture gives rise to higher magnitude of plastic strain near the tip. (C) 2010 Elsevier Ltd. All rights reserved.

Elusive superconductivity in polycrystalline samples of layered lanthanum nickelates

La2-xNiO4, La2-xSrxNiO4 and related layered nickelates have been investigated for possible presence of superconductivity. While there is clear onset of diamagnetism around 20 K in many of these nickelates, we do not, however, find any anomaly in the electrical resistivity, magnetoresistance or thermopower around 20 K. High energy spectroscopic studies show Ni to be in the 2+ oxidation state accompanied by a substantial proportion of oxygen holes.

Low temperature processing and chacterization of SrBi2Nb2O9 thin films grown by pulsed laser ablation

Ex-situ grown thin films of SrBi2Nb2O9 (SBN) were deposited on platinum substrates using laser ablation technique. A low substrate-temperature-processing route was chosen to avoid any diffusion of bismuth into the Pt electrode. It was observed that the as grown films showed an oriented growth along the 'c'-axis (with zero spontaneous polarization). The as grown films were subsequently annealed to enhance crystallization. Upon annealing, these films transformed into a polycrystalline structure, and exhibited excellent ferroelectric properties. The switching was made to be possible by lowering the thickness without losing the electrically insulating behavior of the films. The hysteresis results showed an excellent square-shaped loop with results (P-r = 4 muC/cm(2) E-c = 90 kV/cm) in good agreement with the earlier reports. The films also exhibited a dielectric constant of 190 and a dissipation factor of 0.02, which showed dispersion at low frequencies. The frequency dispersion was found to obey Jonscher's universal power law relation, and was attributed to the ionic charge hopping process according to earlier reports. The de transport studies indicated an ohmic behavior in the low voltage region, while higher voltages induced a bulk space charge and resulted in non-linear current-voltage dependence.

Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size

This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.

I–U Characteristics of MOS Structures on Polycrystalline Silicon

Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht.

Varistors based on polycrystalline ZnO:Cu

Sintered, polycrystalline ZnO ceramics with copper as the only additive exhibit highly nonlinear current‐voltage characteristics. Increasing nonlinearity index (α=4–45) with Cu concentration of 0.01–1 mol % is also variable with respect to ceramic processing methods. Incorporation of Cu in the ZnO lattice is indicated from the electron probe microanalysis and the photoluminescence spectra. Cu acceptors are compensated by holes in the grain boundary layers, whereas the concentration of intrinsic donors is higher in the grain interior. The presence of positive charges leads to thinning of the depletion region, resulting in nonlinear characteristics.

Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon

This paper reports the variations in impedance with frequency of metal‐oxide‐semiconductor (MOS) structures on polycrystalline silicon. The origin of these impedance‐frequency characteristics are qualitatively explained. These characteristics indicate that the MOS structure on polycrystalline silicon can be exploited to realize voltage controlled filters.

Neutralization of phosphorus in polycrystalline silicon by hydrogenation

Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films.

Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis

PbSnS2 thin film has been prepared for the first time by spray pyrolysis technique on FTO substrate at 570K. The preliminary optical and structural characteristics of the film have been reported. The optical studies showed that the value of the fundamental absorption edge lies at 1.47eV and a low energy absorption band tail has been observed. The prepared film is p- type electrical conductivity, polycrystalline in nature and has an orthorhombic crystal structure. The value of an average grain size of the film is 350Å.