Poly(3-hydroxyoctanoate), a promising new material for cardiac tissue engineering

Cardiac tissue engineering (CTE) is currently a prime focus of research due to an enormous clinical need. In this work, a novel functional material, Poly(3-hydroxyoctanoate), P(3HO), a medium chain length polyhydroxyalkanoate (PHA), produced using bacterial fermentation, was studied as a new potential material for CTE. Engineered constructs with improved mechanical properties, crucial for supporting the organ during new tissue regeneration, and enhanced surface topography, to allow efficient cell adhesion and proliferation, were fabricated. Our results showed that the mechanical properties of the final patches were close to that of cardiac muscle. Biocompatibility of the P(3HO) neat patches, assessed using Neonatal ventricular rat myocytes (NVRM), showed that the polymer was as good as collagen in terms of cell viability, proliferation and adhesion. Enhanced cell adhesion and proliferation properties were observed when porous and fibrous structures were incorporated to the patches. Also, no deleterious effect was observed on the adults cardiomyocytes’ contraction when cardiomyocytes were seeded on the P(3HO) patches. Hence, P(3HO) based multifunctional cardiac patches are promising constructs for efficient CTE. This work will provide a positive impact on the development of P(3HO) and other PHAs as a novel new family of biodegradable functional materials with huge potential in a range of different biomedical applications, particularly CTE, leading to further interest and exploitation of these materials.

Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene)

A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

Investigation of electron acceptor states in poly(3-methylthiophene)

Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier.

Charge transport in poly(3-methylthiophene) schottky barrier diodes

Schottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour event at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices. © 1993.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.

Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene)

A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

Investigation of electron acceptor states in poly(3-methylthiophene)

Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier.

Charge transport in poly(3-methylthiophene) schottky barrier diodes

Schottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour event at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices. © 1993.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.

Medium-Chain-Length Poly (3-Hydroxyalkanoate) Nanoparticle Suspensions

Thesis (Master, Chemical Engineering) -- Queen's University, 2016-08-16 04:58:55.749

Study of the second hyperpolarizability of poly(3-alkylthiophenes) using the third-harmonic scattering technique

During the past years, the considerable need in the domain of communications for more potent photonic devices has focused the research activities into the nonlinear optical (NLO) materials which can be used for modern optical switches. In this regard, a lot of research activities are focused on the organic materials and conjugated polymers which offer more advantages compared to the inorganic ones. On this matter, poly(3-alkylthiophene) (P3AT), an organic conjugated polymer, can be investigated as potential optical material with in particular the focus on the NLO properties such as the first- and second-hyperpolarizability, β and γ respectively. The activities carried out at the Laboratory of Polymer Synthesis of the KU Leuven, during the master's thesis work, focused on the study of conjugated polymers in order to evaluate their NLO properties for the future purpose of applications in optical systems. In particular, three series of polythiophenes functionalized with an alkyl side chain in the 3-position were synthesized: poly(3-hexylthiophene) (P3HT), poly[3-(2-ethylhexyl)thiophene] (P3EHT) and random copolymer of the two regio-isomers of P3HT. They were made in order to study the influence of molar mass, branching and regio-irregularity on the γ-value. The Kumada catalyst transfer condensative polymerization (KCTCP) and the Pd(RuPhos)-protocol were used for the polymerizations in order to have control over the molar mass of the growing chain and consequently to obtain well-defined and reproducible materials. The P3AT derivatives obtained were characterized by gel permeation chromatography (GPC), spectroscopic techniques (1H-NMR, UV-Vis) and the γ-value was investigated using the third-harmonic scattering (THS) technique. In particular, the THS technique is useful to investigate the optical behavior of the series of polymers in solution.

Fabricação e caracterização de filmes Langmuir e Langmuir-Blodgett de derivados do politiofeno

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fabricação e caracterização elétrica de filmes nanoestruturados de derivados do politiofeno

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Estratégias de cultivo para produção dos plásticos biodegradáveis poli(3-Hidroxibutirato) e poli(3-hidroxibutirato-co-3-hidroxivalerato) por bactérias

Polyhydroxyalkanoates (PHAs) are carbon and energy storage materials that are accumulated as intracellular granules in a variety of microorganisms during unbalanced growth. PHAs have drawn attention due to their properties similar to conventional plastics and complete biodegradability. They can be used for food and cosmetics packaging, and in medicine and agriculture. However, their applicability is reduced because of their high production cost compared to conventional plastics. An overview on production strategies of poly(3-hydroxybutyrate) and poly(3-hydroxybutyrate-co-3-hydroxyvalerate) aiming at reducing the production costs is presented.