Silicon thin films prepared in the transition region and their use in solar cells

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.

Long period two-dimensional gratings for 8-12 mu m quantum well infrared photodetectors

By considering all possible high order diffracted waves, the authors investigate the spectral response of two-dimensional gratings for quantum well infrared photodetectors (QWIPs). A new method is proposed that using long period gratings may improve grating quality and reduce the resulting cross talk in grating-coupled QWIPs. A sensitivity analysis indicates that the influence of variation of the grating constant on the coupling efficiency is less sensitive for the long period gratings than for the short ones. A large coupling efficiency has been demonstrated for long period gratings. The calculated wide grating response spectra are in good agreement with the experiment result. (C) 1996 American Institute of Physics.

A voltage-controlled tunable two-color infrared photodetector using GaAs/AlAs/GaAlAs and GaAs/GaAlAs stacked multiquantum wells

A voltage-controlled tunable two-color infrared detector with photovoltaic (PV) and photoconductive (PC) dual-mode operation at 3-5 mu m and 8-14 mu m using GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and bound-to-continuum GaAs/AlGaAs quantum wells is demonstrated. The photoresponse peak of the photovoltaic GaAs/AlAs/GaAlAs DBQWs is at 5.3 mu m, and that of the photoconductive GaAs/GaAlAs quantum wells is at 9.0 mu m. When the two-color detector is under a zero bias, the spectral response at 5.3 mu m is close to saturate and the peak detectivity at 80 K can reach 1.0X10(11) cmHz(1/2)/W, while the spectral photoresponsivity at 9.0 mu m is absolutely zero completely. When the external voltage of the two-color detector is changed to 2.0 V, the spectral photoresponsivity at 5.3 mu m becomes zero while the spectral photoresponsivity at 9.0 mu m increases comparable to that at 5.3 mu m under zero bias, and the peak detectivity (9.0 mu m) at 80 K can reach 1.5X10(10) cmHz(1/2)/W. Strictly speaking, this is a real bias-controlled tunable two-color infrared photodetector. We have proposed a model based on the PV and PC dual-mode operation of stacked two-color QWIPs and the effects of tunneling resonance with narrow energy width of photoexcited electrons in DBQWs, which can explain qualitatively the voltage-controlled tunable behavior of the photoresponse of the two-color infrared photodetector. (C) 1996 American Institute of Physics.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

High efficiency and stable dye-sensitized solar cells with an organic chromophore featuring a binary pi-conjugated spacer

We employed a binary spacer of orderly conjugated 3,4-ethyldioxythiophene and thienothiophene to construct a wide-spectral response organic chromophore for dye-sensitized solar cells, exhibiting a high power conversion efficiency of 9.8% measured under irradiation of 100 mW cm(-2) air mass 1.5 global (AM1.5G) sunlight and an excellent stability.

An intercomparison of bio-optical techniques for detecting dominant phytoplankton size class from satellite remote sensing

Satellite remote sensing of ocean colour is the only method currently available for synoptically measuring wide-area properties of ocean ecosystems, such as phytoplankton chlorophyll biomass. Recently, a variety of bio-optical and ecological methods have been established that use satellite data to identify and differentiate between either phytoplankton functional types (PFTs) or phytoplankton size classes (PSCs). In this study, several of these techniques were evaluated against in situ observations to determine their ability to detect dominant phytoplankton size classes (micro-, nano- and picoplankton). The techniques are applied to a 10-year ocean-colour data series from the SeaWiFS satellite sensor and compared with in situ data (6504 samples) from a variety of locations in the global ocean. Results show that spectral-response, ecological and abundance-based approaches can all perform with similar accuracy. Detection of microplankton and picoplankton were generally better than detection of nanoplankton. Abundance-based approaches were shown to provide better spatial retrieval of PSCs. Individual model performance varied according to PSC, input satellite data sources and in situ validation data types. Uncertainty in the comparison procedure and data sources was considered. Improved availability of in situ observations would aid ongoing research in this field.

Micromachined 300GHz high Q resonant slot frequency selective surface filter

The design of a low loss quasi-optical beam splitter which is required to provide efficient diplexing of the bands 316.5-325.5 GHz and 349.5-358.5 GHz is presented. To minimise the filter insertion loss, the chosen architecture is a three-layer freestanding array of dipole slot elements. Floquet modal analysis and finite element method computer models are used to establish the geometry of the periodic structure and to predict its spectral response. Two different micromachining approaches have been employed to fabricate close packed arrays of 460 mm long elements in the screens that form the basic building block of the 30mm diameter multilayer frequency selective surface. Comparisons between simulated and measured transmission coefficients for the individual dichroic surfaces are used to determine the accuracy of the computer models and to confirm the suitability of the fabrication methods.

Multivariate prediction of clarified butter composition using Raman spectroscopy

Raman spectroscopy has been used to predict the abundance of the FA in clarified butterfat that was obtained from dairy cows fed a range of levels of rapeseed oil in their diet. Partial least squares regression of the Raman spectra against FA compositions obtained by GC showed good prediction for the five major (abundance >5%) FA with R-2=0.74-0.92 and a root mean SE of prediction (RMSEP) that was 5-7% of the mean. In general, the prediction accuracy fell with decreasing abundance in the sample, but the RMSEP was 1.25%. The Raman method has the best prediction ability for unsaturated FA (R-2=0.85-0.92), and in particular trans unsaturated FA (best-predicted FA was 18:1 tDelta9). This enhancement was attributed to the isolation of the unsaturated modes from the saturated modes and the significantly higher spectral response of unsaturated bonds compared with saturated bonds. Raman spectra of the melted butter samples could also be used to predict bulk parameters calculated from standard analyzes, such as iodine value (R-2=0.80) and solid fat content at low temperature (R-2=0.87). For solid fat contents determined at higher temperatures, the prediction ability was significantly reduced (R-2=0.42), and this decrease in performance was attributed to the smaller range of values in solid fat content at the higher temperatures. Finally, although the prediction errors for the abundances of each of the FA in a given sample are much larger with Raman than with full GC analysis, the accuracy is acceptably high for quality control applications. This, combined with the fact that Raman spectra can be obtained with no sample preparation and with 60-s data collection times, means that high-throughput, on-line Raman analysis of butter samples should be possible.

Single sideband FSS with high image rejection

The design of a quasi-optical single sideband filter, which provides more than 30 dB of isolation between the frequency bands 294-305.5 and 329.5-341.5 GHz in the TM plane at 45 degrees incidence, is described. The structure, which consists of three free-standing arrays of dipole slot elements, generates a bandpass spectral response with an insertion loss below 0.5 dB at resonance. Simulated and measured transmission coefficients in the range 250-400 GHz are shown to be in good agreement.

Ultrafast nonlinearities of minibands in metallodielectric Bragg resonators

The nonlinear properties of metallodielectric DBRs are investigated via optical pump-probe techniques using a widely tunable, dual-colour, high-repetition rate, ultrafast setup. As a consequence of the Bragg-arranged multilayers, the electric field penetrates to different depths of the nanostructure at different excitation resonances, strongly enhancing the intrinsic nonlinear response of the metal in comparison with bulk films. The analyzed spectral response of these structures reveals how their nonlinear behavior is dominated by the pump-induced modification of the metal dielectric function. Fitting the simulated changes of the optical resonances using transfer-matrix methods matches experiment well, and shows the key effects of the spectral dependence of the spatial mode profiles.

Electrical characterisation of liquid crystals at millimetre wavelengths using frequency selective surfaces

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The accurate measurement of the permittivity, loss tangent and dielectric anisotropy DC bias dependence for two different liquid crystal (LC) materials in the frequency range 140-165 GHz is described. The electrical characteristics are obtained by curve fitting computed transmission coefficients to the experimental spectral response of a new class of electronically reconfigurable frequency selective surface. The periodic structure is designed to yield bandpass filter characteristics with and without an applied bias control voltage in order to measure the tunability of the LC material which is inserted in a 705 µm-thick cavity.

Monolithic fused 1 x 4 couplers with high uniformity

A new method for the fabrication of high uniformity monolithic 1 x 4 single mode fused coupler is described together with details of its performance in terms of coupling ratio, spectral response and uniformity. The fabricated device exhibits ultra-broadband performance with a port-to-port uniformity of 0.4 dB. The reliability of such couplers is also evaluated and found to have good stability. Moreover, by controlling the process parameters it is possible to control the power remaining in the through put port of the device, which can be used for dedicated non-intrusive network health monitoring.

Monolithic fused 1 x 4 couplers with high uniformity

A new method for the fabrication of high uniformity monolithic 1 x4 single-mode fused coupler is described together with details of its performance in terms of coupling ratio, spectral response and uniformity. The fabricated device exhibits ultra-broadband performance with a port-to-port uniformity of 0.4 dB. The reliability of such couplers is also evaluated and found to have good stability. Moreover, by controlling the process parameters it is possible to control the power remaining in the through put port of the device, which can be used for dedicated non-intrusive network health monitoring