Measurement of IGBT switching characteristics and loss using coaxial current transformer

Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out on a 50A, 1200V IGBT (SKM50GB123D) for different values of gate resistance, device current and junction temperature. These measurements augment the technical data available in the device datasheet.Short circuit transients are also investigated experimentally under hard switched fault as well as fault under load conditions.

Design of a Portable Compliant Device for Estimating the Failure-Load of Mesoscale Cemented Sand Specimens

In this paper, we present the design and development of a portable, hand-operated composite compliant mechanism for estimating the failure-load of cm-sized stiff objects whose stiffness is of the order of 10 s of kN/m. The motivation for the design comes from the need to estimate the failure-load of mesoscale cemented sand specimens in situ, which is not possible with traditional devices used for large specimens or very small specimens. The composite compliant device, developed in this work, consists of two compliant mechanisms: a force-amplifying compliant mechanism (FaCM) to amplify sufficiently the force exerted by hand in order to break the specimen and a displacement-amplifying compliant mechanism (DaCM) to enable measurement of the force using a proximity sensor. The two mechanisms are designed using the selection-maps technique to amplify the force up to 100N by about a factor of 3 and measure the force with a resolution of 15 mN. The composite device, made using a FaCM, a DaCM, and a Hall effect-based proximity sensor, was tested on mesoscale cemented sand specimens that were 10mm in diameter and 20mm in length. The results are compared with those of a large commercial instrument. Through the experiments, it was observed that the failure-load of the cemented sand specimens varied from 0.95N to 24.33 N, depending on the percentage of cementation and curing period. The estimation of the failure-load using the compliant device was found to be within 1.7% of the measurements obtained using the commercial instrument and thus validating the design. The details of the design, prototyping, specimen preparation, testing, and the results comprise the paper.

Experimental characterisation and performance evaluation of a coaxial current transformer for measurement of insulated gate bipolar transistor switching current

Measurement of device current during switching characterisation of an insulated gate bipolar transistor (IGBT) requires a current sensor with low insertion impedance and high bandwidth. This study presents an experimental procedure for evaluating the performance of a coaxial current transformer (CCT), designed for the above purpose. A prototype CCT, which can be mounted directly on a power terminal of a 1200 V/50 A half-bridge IGBT module, is characterised experimentally. The measured characteristics include insertion impedance, gain and phase of the CCT at different frequencies. The bounds of linearity within which the CCT can operate without saturation are determined theoretically, and are also verified experimentally. The experimental study on linearity of the CCT requires a high-amplitude current source. A proportional-resonant (PR) controller-based current-controlled half-bridge inverter is developed for this purpose. A systematic procedure for selection of PR controller parameters is also reported in this study. This set-up is helpful to determine the limit of linearity and also to measure the frequency response of the CCT at realistic amplitudes of current in the low-frequency range.

Design of a Wearable Remote Neonatal Health Monitoring Device

In this text we present the design of a wearable health monitoring device capable of remotely monitoring health parameters of neonates for the first few weeks after birth. The device is primarily aimed at continuously tracking the skin temperature to indicate the onset of hypothermia in newborns. A medical grade thermistor is responsible for temperature measurement and is directly interfaced to a microcontroller with an integrated bluetooth low energy radio. An inertial sensor is also present in the device to facilitate breathing rate measurement which has been discussed briefly. Sensed data is transferred securely over bluetooth low energy radio to a nearby gateway, which relays the information to a central database for real time monitoring. Low power optimizations at both the circuit and software levels ensure a prolonged battery life. The device is packaged in a baby friendly, water proof housing and is easily sterilizable and reusable.

Thermal Properties Measurement of Micro-Electromechanical System Sensors by Digital Moire Method

The thermal properties of a micro-electromechanical system sensor were analysed by a novel digital moire method. A double-layer micro-cantilever sensor (60 mu m long, 10 mu m width and 2 mu dm thick) was prepared by focused ion beam milling. A grating with frequency of 5000 lines mm- I was etched on the cantilever. The sensor was placed into a scanning electron microscope system with a high temperature device. The observation and recording of the thermal deformation of the grating were realised in real-time as the temperature rose from room temperature to 300 degrees C at intervals of 50 degrees C. Digital moire was generated by interference of the deformed grating and a digital virtual grating. The thermal properties including strain distribution of the sensor and the linear expansion coefficient of polysilicon were accurately measured by the phase-shifted moire patterns.

Real-Time Measurement on Deformation Fields of Hole-Excavated Samples under Impact Tension

In this paper, the real-time deformation fields are observed in two different kinds of hole-excavated dog-bone samples loaded by an SHTB, including single hole sample and dual holes sample with the aperture size of 0.8mm. The testing system consists of a high-speed camera, a He-Ne laser, a frame grabber and a synchronization device with the controlling accuracy of I microsecond. Both the single hole expanding process and the interaction of the two holes are recorded with the time interval of 10 mu s. The observed images on the sample surface are analyzed by newly developed software based on digital correlation theory and a modified image processing method. The 2-D displacement fields in plane are obtained with a resolution of 50 mu m and an accuracy of 0.5 mu m. Experimental results obtained in this paper are proofed, by compared with FEM numerical simulations.

Broad spectrum measurement of the birefringence of an isothiocyanate based liquid crystal.

Tunable materials with high anisotropy of refractive index and low loss are of particular interest in the microwave and terahertz range. Nematic liquid crystals are highly sensitive to electric and magnetic fields and may be designed to have particularly high birefringence. In this paper we investigate birefringence and absorption losses in an isothiocyanate based liquid crystal (designed for high anisotropy) in a broad range of the electromagnetic spectrum, namely 0.1-4 GHz, 30 GHz, 0.5-1.8 THz, and in the visible and near-infrared region (400 nm-1600 nm). We report high birefringence (Δn = 0.19-0.395) and low loss in this material. This is attractive for tunable microwave and terahertz device applications.

Real-Time Measurement on Deformation Fields of Notched Samples Under Impact Tension

In this paper, a real-time and in situ optical measuring system is reported to observe high-velocity deformations of samples subjected to impact loading. The system consists of a high-speed camera, a He-Ne laser, a frame grabber, a synchronization device and analysis software based on digital correlation theory. The optical system has been adapted to investigate the dynamic deformation field and its evolution in notched samples loaded by an split Hopkinson tension bar, with a resolution of 50 pin and an accuracy of 0.5 mum. Results obtained in experiments are discussed and compared with numerical simulations. It is shown that the measuring system is effective and valid.

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.

Real-Time Measurement on Deformation Fields of Hole-Excavated Samples under Impact Tension

In this paper, the real-time deformation fields are observed in two different kinds of hole-excavated dog-bone samples loaded by an SHTB, including single hole sample and dual holes sample with the aperture size of 0.8mm. The testing system consists of a high-speed camera, a He-Ne laser, a frame grabber and a synchronization device with the controlling accuracy of I microsecond. Both the single hole expanding process and the interaction of the two holes are recorded with the time interval of 10 mu s. The observed images on the sample surface are analyzed by newly developed software based on digital correlation theory and a modified image processing method. The 2-D displacement fields in plane are obtained with a resolution of 50 mu m and an accuracy of 0.5 mu m. Experimental results obtained in this paper are proofed, by compared with FEM numerical simulations.

Tribological properties of mems materials measured on a small-scale device

Micro-electro-mechanical systems, MEMS, is a rapidly growing interdisciplinary technology within the general field of Micro-Systems Technology which deals with the design and manufacture of miniaturised machines with major dimensions at the scale of tens, to perhaps hundreds, of microns. Because they depend on the cube of a representative dimension, component masses and inertias rapidly become small as size decreases whereas surface and tribological effects, which often depend on area, become increasingly important. Although MEMS components and their areas of contact are small, tribological conditions, measured by contact pressures or acceptable wear rates, are demanding and technical and commercial success will require careful measurement and precise control of surface topography and properties. Fabrication of small numbers of MEMS devices designed to test potential material combinations can be prohibitively expensive and thus there is a need for small scale test facilities which mimic the contact conditions within a micro-machine without themselves requiring processing within a full semiconductor foundry. The talk will illustrate some initial experimental results from a small-scale experimental device which meets these requirements, examining in particular the performance of Diamond-Like-Carbon coatings on a silicon substrate. Copyright © 2005 by ASME.

A closely integrated digital image capture device for embedded applications

A modular image capture system with close integration to CCD cameras has been developed. The aim is to produce a system capable of integrating CCD sensor, image capture and image processing into a single compact unit. This close integration provides a direct mapping between CCD pixels and digital image pixels. The system has been interfaced to a digital signal processor board for the development and control of image processing tasks. These have included characterization and enhancement of noisy images from an intensified camera and measurement to subpixel resolutions. A highly compact form of the image capture system is in an advanced stage of development. This consists of a single FPGA device and a single VRAM providing a two chip image capturing system capable of being integrated into a CCD camera. A miniature compact PC has been developed using a novel modular interconnection technique, providing a processing unit in a three dimensional format highly suited to integration into a CCD camera unit. Work is under way to interface the compact capture system to the PC using this interconnection technique, combining CCD sensor, image capture and image processing into a single compact unit. ©2005 Copyright SPIE - The International Society for Optical Engineering.

Improved infrared thermal imaging of a CMOS MEMS device

We report a technique which can be used to improve the accuracy of infrared (IR) surface temperature measurements made on MEMS (Micro-Electro-Mechanical- Systems) devices. The technique was used to thermally characterize a SOI (Silicon-On-Insulator) CMOS (Complementary Metal Oxide Semiconductor) MEMS thermal flow sensor. Conventional IR temperature measurements made on the sensor were shown to give significant surface temperature errors, due to the optical transparency of the SiO 2 membrane layers and low emissivity/high reflectivity of the metal. By making IR measurements on radiative carbon micro-particles placed in isothermal contact with the device, the accuracy of the surface temperature measurement was significantly improved. © 2010 EDA Publishing/THERMINIC.

Voltage programmable dual-band bandpass/bandstop filter response in a single micro-electro-mechanical device

This paper reports on a switchable multi-band filter response achieved within a single micro-electro-mechanical device. A prototype device fabricated in a SOI process demonstrates a voltage programmable and tunable, dual-band, band-pass/band-stop response. Both analytical and finite element models are introduced in this paper to elucidate the operating principle of the filter and to guide filter design. Voltage programmability of the filter characteristic is demonstrated with the ability to independently tune the centre frequency and bandwidth for each band. A representative measurement shows that the minimum 3 dB-bandwidth (BW) is 155 Hz, 140Hz, and 20 dB-BW is 216 Hz, 203Hz for the upper-band and lower-band center frequencies located at 131.5 kHz and 130.7 kHz, respectively. © 2011 IEEE.