An Electron-Microscopic Investigation Of Oxides Related To Beta-Alumina

High resolution electron microscopic (HREM) investigation of potassiumbeta-alumina and the related gallate and ferrite has revealed that whereas the aluminate and gallate are highly disordered, consisting of random sequence ofbeta andbetaPrime units, the ferrite is more ordered. The aluminate and gallate are sensitive to electron beam irradiation exhibiting beam-induced damage similar to sodiumbetaPrime-alumina. Significantly, the ferrite is beamstable, the difference in behaviour amongst these related oxides arising from the different mechanisms by which alkali metal nonstoichiometry is accommodated. Barium hexaaluminate and hexaferrite are both highly ordered; specimens prepared by the barium borate flux method exhibit a new radic3a×radic3a superstructure of the hexagonal magnetoplumbite cell.

Oxides supported carbon air-electrodes for alkaline solution power devices

Porous carbon oxygen-reducing electrodes incorporated with perovskite oxide catalysts are reported. It has been possible to fabricate high-performance oxygen-reducing electrodes by introducing La0.5Sr0.5CoO3 and La0.99Sr0.01NiO3 with the activated coconut-shell charcoal; these electrodes could sustain load currents as high as 1 A cm−2 without serious degradation. A model to explain oxygen-reducing activity of these oxides has been proposed.

Magnetic susceptibility studies of lead oxyhalide glasses containing transition metal oxides

Magnetic susceptibility studies of lead oxyhalide glasses containing high concentrations of transition metal oxides such as MnO and Fe2O3 have been performed. While they exhibit predominantly antiferromagnetic interactions, the low temperature (<100K) region is dominated by paramagnetic contributions. The behaviour in these glasses is found to be similar to that of covalent oxide glasses and is different from that of purely ionic sulphate glasses.

Infrared and Mössbauer spectroscopic study of the metal-insulator transition in some oxides of perovskite structure

The IR spectra of some LaNi1−xBxO3 (B = Cr, Fe, and Co) compounds having perovskite structure have been studied in the range 1000−300 cm−1. An investigation of the changes in the metal-oxygen stretching frequency as x → xc from the insulating side has been carried out. An important feature is that as x → xc the vibrational features in the infrared spectra disappear when the resistivity is not, vert, similar10−1 Ω cm which is of two orders of magnitude more than the value of varrho0 at which the temperature coefficient of resistance changes sign. Mössbauer studies on Fe-containing samples with various conductivities show that the isomer shift decreases as conductivity increases which is indicative of larger Fe---O overlap.

Reinvestigation of the antifungal activities of some aromatic N-oxides

Dinitroquinoline-N-oxide, 4-nitroquinoline N-oxide and a series of 4-substituted pyridine N-oxides have been subjected toMINDO/3 treatment in order to understand their antifungal activities. The photoelectron spectra and the nature of the N-oxide bond are discussed.

Infrared spectra of some oxides of K2NiF4 and related structures

The i.r. spectra of some Ln2BO4 and LnSrBO4 compounds (Ln = La, Pr, Nd, Sm or Gd;B = Fe, Al, Co or Cu) with K2NiF4 or related structures have been studied in the range 800-300 cm−1. The BO6 octahedra in compounds with K2NiF4 structure are elongated. The assignment of the bands in terms of internal modes of sheets of bridged BO6 octahedra or square-planar BO4 sheets has been considered. The observed spectra are correlated with those of solid solutions of these oxides and of LnBO3 perovskites. Unusually high stretching frequencies found in some of the oxides are discussed in terms of the short B---O bonds in the basal plane and the Ln---O bonds along the c axis.

Infrared spectra of some oxides of K2NiF4 and related structures

The i.r. spectra of some Ln2BO4 and LnSrBO4 compounds (Ln = La, Pr, Nd, Sm or Gd;B = Fe, Al, Co or Cu) with K2NiF4 or related structures have been studied in the range 800-300 cm−1. The BO6 octahedra in compounds with K2NiF4 structure are elongated. The assignment of the bands in terms of internal modes of sheets of bridged BO6 octahedra or square-planar BO4 sheets has been considered. The observed spectra are correlated with those of solid solutions of these oxides and of LnBO3 perovskites. Unusually high stretching frequencies found in some of the oxides are discussed in terms of the short B---O bonds in the basal plane and the Ln---O bonds along the c axis.

New A2+Mo4+O3 oxides with defect spinel structure

New A2+Mo4+O3 oxides for A = Mn, Co and Zn crystallizing in a defect spinel structure have been prepared by hydrogen-reduction of the corresponding AMoO4 oxides. X-ray powder diffraction intensity analysis of the zinc compound indicates that the cation distribution is (Zn)t[Zn1/3Mo4/3□1/3]oO4. The defect spinels are metastable decomposing to a mixture of A2Mo3O8 and AO at high temperatures. Electrical and magnetic properties of the spinel phases are reported.

Radical Enhanced Atomic Layer Deposition of Metals and Oxides

Atomic Layer Deposition (ALD) is a chemical, gas-phase thin film deposition method. It is known for its ability for accurate and precise thickness control, and uniform and conformal film growth. One area where ALD has not yet excelled is film deposition at low temperatures. Also deposition of metals, besides the noble metals, has proven to be quite challenging. To alleviate these limitations, more aggressive reactants are required. One such group of reactants are radicals, which may be formed by dissociating gases. Dissociation is most conveniently done with a plasma source. For example, dissociating molecular oxygen or hydrogen, oxygen or hydrogen radicals are generated. The use of radicals in ALD may surmount some of the above limitations: oxide film deposition at low temperatures may become feasible if oxygen radicals are used as they are highly reactive. Also, as hydrogen radicals are very effective reducing agents, they may be used to deposit metals. In this work, a plasma source was incorporated in an existing ALD reactor for radical generation, and the reactor was used to study five different Radical Enhanced ALD processes. The modifications to the existing reactor and the different possibilities during the modification process are discussed. The studied materials include two metals, copper and silver, and three oxides, aluminium oxide, titanium dioxide and tantalum oxide. The materials were characterized and their properties were compared to other variations of the same process, utilizing the same metal precursor, to understand what kind of effect the non-metal precursor has on the film properties and growth characteristics. Both metals were deposited successfully, and silver for the first time by ALD. The films had low resistivity and grew conformally in the ALD mode, demonstrating that the REALD of metals is true ALD. The oxide films had exceptionally high growth rates, and aluminium oxide grew at room temperature with low cycle times and resulted in good quality films. Both aluminium oxide and titanium dioxide were deposited on natural fibres without damaging the fibre. Tantalum oxide was also deposited successfully, with good electrical properties, but at slightly higher temperature than the other two oxides, due to the evaporation temperature required by the metal precursor. Overall, the ability of REALD to deposit metallic and oxide films with high quality at low temperatures was demonstrated.