Report on third FIDAWOG Workshop held at the Triangle Hotel, Jinja, 29 March to 1 April 1999: summary of proceedings

The FIDAWOG workshop held from 29 March to 1 April 1999 in Jinja was the third major stock assessment workshop attended by most of the participants during the project. It followed two workshops, each of which lasted three weeks, held in 1998.

Attenuation tomography. Modelling regional love waves: Imperial Valley to Pasadena

Abstract to Part I

The inverse problem of seismic wave attenuation is solved by an iterative back-projection method. The seismic wave quality factor, Q, can be estimated approximately by inverting the S-to-P amplitude ratios. Effects of various uncertain ties in the method are tested and the attenuation tomography is shown to be useful in solving for the spatial variations in attenuation structure and in estimating the effective seismic quality factor of attenuating anomalies.

Back-projection attenuation tomography is applied to two cases in southern California: Imperial Valley and the Coso-Indian Wells region. In the Coso-Indian Wells region, a highly attenuating body (S-wave quality factor (Q_β ≈ 30) coincides with a slow P-wave anomaly mapped by Walck and Clayton (1987). This coincidence suggests the presence of a magmatic or hydrothermal body 3 to 5 km deep in the Indian Wells region. In the Imperial Valley, slow P-wave travel-time anomalies and highly attenuating S-wave anomalies were found in the Brawley seismic zone at a depth of 8 to 12 km. The effective S-wave quality factor is very low (Q_β ≈ 20) and the P-wave velocity is 10% slower than the surrounding areas. These results suggest either magmatic or hydrothermal intrusions, or fractures at depth, possibly related to active shear in the Brawley seismic zone.

No-block inversion is a generalized tomographic method utilizing the continuous form of an inverse problem. The inverse problem of attenuation can be posed in a continuous form , and the no-block inversion technique is applied to the same data set used in the back-projection tomography. A relatively small data set with little redundancy enables us to apply both techniques to a similar degree of resolution. The results obtained by the two methods are very similar. By applying the two methods to the same data set, formal errors and resolution can be directly computed for the final model, and the objectivity of the final result can be enhanced.

Both methods of attenuation tomography are applied to a data set of local earthquakes in Kilauea, Hawaii, to solve for the attenuation structure under Kilauea and the East Rift Zone. The shallow Kilauea magma chamber, East Rift Zone and the Mauna Loa magma chamber are delineated as attenuating anomalies. Detailed inversion reveals shallow secondary magma reservoirs at Mauna Ulu and Puu Oo, the present sites of volcanic eruptions. The Hilina Fault zone is highly attenuating, dominating the attenuating anomalies at shallow depths. The magma conduit system along the summit and the East Rift Zone of Kilauea shows up as a continuous supply channel extending down to a depth of approximately 6 km. The Southwest Rift Zone, on the other hand, is not delineated by attenuating anomalies, except at a depth of 8-12 km, where an attenuating anomaly is imaged west of Puu Kou. The Ylauna Loa chamber is seated at a deeper level (about 6-10 km) than the Kilauea magma chamber. Resolution in the Mauna Loa area is not as good as in the Kilauea area, and there is a trade-off between the depth extent of the magma chamber imaged under Mauna Loa and the error that is due to poor ray coverage. Kilauea magma chamber, on the other hand, is well resolved, according to a resolution test done at the location of the magma chamber.

Abstract to Part II

Long period seismograms recorded at Pasadena of earthquakes occurring along a profile to Imperial Valley are studied in terms of source phenomena (e.g., source mechanisms and depths) versus path effects. Some of the events have known source parameters, determined by teleseismic or near-field studies, and are used as master events in a forward modeling exercise to derive the Green's functions (SH displacements at Pasadena that are due to a pure strike-slip or dip-slip mechanism) that describe the propagation effects along the profile. Both timing and waveforms of records are matched by synthetics calculated from 2-dimensional velocity models. The best 2-dimensional section begins at Imperial Valley with a thin crust containing the basin structure and thickens towards Pasadena. The detailed nature of the transition zone at the base of the crust controls the early arriving shorter periods (strong motions), while the edge of the basin controls the scattered longer period surface waves. From the waveform characteristics alone, shallow events in the basin are easily distinguished from deep events, and the amount of strike-slip versus dip-slip motion is also easily determined. Those events rupturing the sediments, such as the 1979 Imperial Valley earthquake, can be recognized easily by a late-arriving scattered Love wave that has been delayed by the very slow path across the shallow valley structure.

Conductance calculation of a long tube with equilateral triangle cross section

Using the stratified gas flow model for calculating the conductance of long tubes with constant cross section, an analytical expression for calculating the conductance of along tube with equilateral triangle cross section has been derived. The formula given is applicable to the full pressure range. A minimum in the conductance in the intermediate flow state is shown. 2002 American vacuum Society.

Output Characteristics of an InP/InGaAsP Triangle Microcavity Laser

Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10 mu m, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270 K show that lasing modes coexist with the wavelength interval of 39 nm at 240 K. The emission at 5.2 THz can be expected by the mode frequency beating with the 39 nm interval.

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. This mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA. (C) 2008 American Vacuum Society.

Optical bistability in InP/GaInAsP equilateral-triangle-resonator microlasers

Optical bistability is reported in InP/GaInAsP equilateral-triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America

Equilateral-Triangle and Square Resonator Semiconductor Microlasers

The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mu m-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mu m and the square resonator microlasers with the side length of 20 mu m. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Perot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

In the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling, the binding energy E-b and spin-orbit split energy Gamma of the ground state of a hydrogenic donor impurity in AlGaN/GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing, (1) the effective width of quantum well (W) over bar decreases and (2) the binding energy increases monotonously, and in the mean time, (3) the spin-orbit split energy Gamma decreases drastically. (4) The maximum of Gamma is 1.22 meV when the electric field of heterointerface is 1 MV/cm.

Analysis of mode characteristics for equilateral triangle semiconductor microlasers with imperfect boundaries

The influence of imperfect boundaries on the mode quality factor is investigated for equilateral-triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Pade approximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5 mum, the confined modes can still have a quality factor of about 1000 as small triangles with side length of 1 mum are cut from the vertices of the ETR. For a deformed 5 mum ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.

Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 mum.

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

Room-temperature continuous-wave electrically injected InP-GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 pm and the output-waveguide width of 1 or 2 pm are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-mu m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.

Equilateral-triangle-resonator injection lasers with directional emission

Equilateral-triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 pm up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mu m from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K.