Plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant materials

The plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant material are investigated in this paper. Applying the stress-strain relation for the pressure-sensitive dilatant material, we have obtained an exact asymptotic solution for the plane strain tip fields for two types of cracks, one of which lies in the pressure-sensitive dilatant material and the other in the elastic material and their tips touch both the bimaterial interface. In cases, numerical results show that the singularity and the angular variations of the fields obtained depend on the material hardening exponent n, the pressure sensitivity parameter mu and geometrical parameter lambda.

Materials selection in mechanical design for microsensors and microactuators

Microsensors and microactuators are vital organs of microelectromechanical systems (MEMS), forming the interfaces between controller and environment. They are usually used for devices ranging in size at sub-millimeter or micrometer level, transforming energy between two or more domains. Presently, most of the materials used in MEMS devices belong to the silicon material system, which is the basis of the integrated circuit industry. However, new techniques are being explored and developed, and the opportunities for MEMS materials selection are getting broader. The present paper tries to apply 'performance index' to select the material best suited to a given application, in the early stage of MEMS design. The selection is based on matching performance characteristics to the requirements. A series of performance indices are given to allow a wide range comparison of materials for several typical sensing and actuating structures, and a rapid identification of candidates for a given task. (C) 2002 Elsevier Science Ltd. All rights reserved.

Bio-inspired mechanics of reversible adhesion: Orientation-dependent adhesion strength for non-slipping adhesive contact with transversely isotropic elastic materials

Geckos and many insects have evolved elastically anisotropic adhesive tissues with hierarchical structures that allow these animals not only to adhere robustly to rough surfaces but also to detach easily upon movement. In order to improve Our understanding of the role of elastic anisotropy in reversible adhesion, here we extend the classical JKR model of adhesive contact mechanics to anisotropic materials. In particular, we consider the plane strain problem of a rigid cylinder in non-slipping adhesive contact with a transversely isotropic elastic half space with the axis of symmetry oriented at an angle inclined to the surface. The cylinder is then subjected to an arbitrarily oriented pulling force. The critical force and contact width at pull-off are calculated as a function of the pulling angle. The analysis shows that elastic anisotropy leads to an orientation-dependent adhesion strength which can vary strongly with the direction of pulling. This study may suggest possible mechanisms by which reversible adhesion devices can be designed for engineering applications. (C) 2006 Elsevier Ltd. All rights reserved.

Crack deflection at an interface between dissimilar elastic-materials

A crack intersecting an interface between two dissimilar materials may advance by either penetrating through the interface or deflecting into the interface. The competition between deflection and penetration can be assessed by comparison of two ratios: (i) the ratio of the energy release rates for interface cracking and crack penetration; and (ii) the ratio of interface to material fracture energies. Residual stresses caused by thermal expansion misfit can influence the energy release rates of both the deflected and penetrating crack. This paper analyses the role of residual stresses. The results reveal that expansion misfit can be profoundly important in systems with planar interfaces (such as layered materials, thin film structures, etc.), but generally can be expected to be of little significance in fiber composites. This paper corrects an earlier result for the ratio of the energy release rate for the doubly deflected crack to that for the penetrating crack in the absence of residual stress.

O design de interfaces epiteliais dinâmicas: como as novas tecnologias afetam o projeto de tatuagens

A tatuagem é uma antiga forma de inscrição corporal que apesar de sua idade não sofreu alterações em termos de materiais e técnicas. O desenvolvimento de tecnologias para a concepção de novas modalidades de intervenção orgânica terá ramificações em diversas áreas, permitindo o uso de novas interfaces epiteliais interativas (tatuagens dinâmicas responsivas), e criando novas vias de interação e comunicação incorporada. Em contraste à prática tradicional de imagens estáticas, as tatuagens dinâmicas (TDs) permitem a geração de imagens dinâmicas e interativas na pele. Nosso objetivo aqui é apresentar este novo campo de pesquisa e refletir sobre o papel do designer no projeto de tatuagens dinâmicas e as implicações destas tatuagens que transformam a pele em uma nova fonte de inscrições interativas e reversíveis.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Electronic structure of interfaces between copper-hexadecafluoro-phthalocyanine and 2,5-bis(4-biphenylyl) bithiophene

The interfaces formed between copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were examined using photoemission and inverse photoemission spectroscopy. It is observed that in F16CuPc/BP2T the heterojunction is characterized by band bending in both materials, while in BP2T/F16CuPc the band bending is confined in BP2T only. The combination of the band bending and finite Debye lengths provides an explanation to the observed ambipolar behavior of the organic thin film transistors based on such heterojunctions.