916 resultados para High mobility group box 1


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Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

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Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

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Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

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Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

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The effect of fluid velocity fluctuations on the dynamics of the particles in a turbulent gas–solid suspension is analysed in the low-Reynolds-number and high Stokes number limits, where the particle relaxation time is long compared with the correlation time for the fluid velocity fluctuations, and the drag force on the particles due to the fluid can be expressed by the modified Stokes law. The direct numerical simulation procedure is used for solving the Navier–Stokes equations for the fluid, the particles are modelled as hard spheres which undergo elastic collisions and a one-way coupling algorithm is used where the force exerted by the fluid on the particles is incorporated, but not the reverse force exerted by the particles on the fluid. The particle mean and root-mean-square (RMS) fluctuating velocities, as well as the probability distribution function for the particle velocity fluctuations and the distribution of acceleration of the particles in the central region of the Couette (where the velocity profile is linear and the RMS velocities are nearly constant), are examined. It is found that the distribution of particle velocities is very different from a Gaussian, especially in the spanwise and wall-normal directions. However, the distribution of the acceleration fluctuation on the particles is found to be close to a Gaussian, though the distribution is highly anisotropic and there is a correlation between the fluctuations in the flow and gradient directions. The non-Gaussian nature of the particle velocity fluctuations is found to be due to inter-particle collisions induced by the large particle velocity fluctuations in the flow direction. It is also found that the acceleration distribution on the particles is in very good agreement with the distribution that is calculated from the velocity fluctuations in the fluid, using the Stokes drag law, indicating that there is very little correlation between the fluid velocity fluctuations and the particle velocity fluctuations in the presence of one-way coupling. All of these results indicate that the effect of the turbulent fluid velocity fluctuations can be accurately represented by an anisotropic Gaussian white noise.

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The fluctuating force model is developed and applied to the turbulent flow of a gas-particle suspension in a channel in the limit of high Stokes number, where the particle relaxation time is large compared to the fluid correlation time, and low particle Reynolds number where the Stokes drag law can be used to describe the interaction between the particles and fluid. In contrast to the Couette flow, the fluid velocity variances in the different directions in the channel are highly non-homogeneous, and they exhibit significant variation across the channel. First, we analyse the fluctuating particle velocity and acceleration distributions at different locations across the channel. The distributions are found to be non-Gaussian near the centre of the channel, and they exhibit significant skewness and flatness. However, acceleration distributions are closer to Gaussian at locations away from the channel centre, especially in regions where the variances of the fluid velocity fluctuations are at a maximum. The time correlations for the fluid velocity fluctuations and particle acceleration fluctuations are evaluated, and it is found that the time correlation of the particle acceleration fluctuations is close to the time correlations of the fluid velocity in a `moving Eulerian' reference, moving with the mean fluid velocity. The variances of the fluctuating force distributions in the Langevin simulations are determined from the time correlations of the fluid velocity fluctuations and the results are compared with direct numerical simulations. Quantitative agreement between the two simulations are obtained provided the particle viscous relaxation time is at least five times larger than the fluid integral time.

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The first meeting of a Jisc convened group to discuss action in the area of bibliographic data.

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In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 °C to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modelling is found to accurately predict the trend of threshold currents over temperature. Using gain modelling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 °C indicate a reduction in RIN frequency to 63% of the 25 °C value which matches well with experimental small signal performance.

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CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

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We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

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The southeastern region of Yunnan province is a key site for drug trafficking and HIV-1 infection spread from the west of Yunnan and Laos to southeastern China. To investigate the prevalence of HIV-1 infection and hepatitis C virus (HCV) coinfection among injection drug users (IDUs) in southeastern Yunnan, three cohorts of 285 addicts, including 242 IDUs and 43 oral drug users, living in the cities of Gejiu and Kaiyuan and the county of Yanshan were studied. HIV-1 and HCV infections were detected by enzyme-linked immunosorbent assay and/or polymerase chain reaction. Data on the age, sex, risk behavior, drug use history, employment, ethnic background, and marriage status were obtained by interview. The overall prevalence of HIV-1 infection was 71.9%. The rate of HCV coinfection among 138 HIV-1-infected IDUs was 99.3%. Most HIV-infected IDUs were 20 to 35 years old (86.7%) and were ethnic Han (75.9%), suggesting that the epidemic in Yunnan is no longer confined to non-Han ethnic minorities, HIV prevalence in female IDUs (81.2%) was significantly higher than in male IDUs (68.2%) (p <.05). The prevalence of HIV infection reached 68.4% after 1 year of injection drug use. Needle/syringe sharing is the major high risk factor for the spread of HIV-1 and HCV infections. Large-scale educational campaigns are urgently needed to reduce the spread of HIV and HCV infection in these regions.