875 resultados para HIGH-QUALITY-FACTOR
Resumo:
The paper reports the results of a high-quality pulse source incorporating a gain-switched laser diode followed by a novel compact two-cascade fibre compression scheme. The pulse compression scheme incorporates a dispersive delay line and a nonlinear pulse compressor based on a dispersion-imbalanced fibre loop mirror (DILM). We analyse and demonstrate for the first time significant improvement of the loop performance by means of the chirped pulse switching. As a result, the DILM provides high-quality nonlinear pulse compression as well as rejection of the nonsoliton component. In the experiment, 20ps pulses from a gain switched laser diode are compressed to a duration of 300fs at a repetition rate in range 70MHz-10GHz. The pulses are pedestal free and transform-limited. Spectral filtering of the output signal by means of a bandpass filter results in generation of wavelength-tuneable picosecond pulses with a duration defined by the filter bandwidth. Alternatively, signal filtering by an arrayed waveguide grating (AWG) results in multichannel picosecond pulse generation for WDM and OTDM applications. The pulse source is built of standard components and is of compact and potentially robust design.
Resumo:
Low-temperature (∼600 °C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio ≤0.08, and carrier mobilities of ≥3000 cm(2) V(-1) s(-1) on SiO(2) support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.
Resumo:
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices. © 2008 IEEE.
Resumo:
Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.
Resumo:
The enhancement of quality factor for TE whispering-gallery modes is analyzed for three-dimensional microcylinder resonators based on the destructive interference between vertical leakage modes. In the microcylinder resonator, the TE whispering-gallery modes can couple with vertical propagation modes, which results in vertical radiation loss and low quality factors. However, the vertical loss can be canceled by choosing appropriate thickness of the upper cladding layer or radius of the microcylinder. A mode quality factor increase by three orders of magnitude is predicted by finite-difference time-domain simulation. Furthermore, the condition of vertical leakage cancellation is analyzed.