944 resultados para Grain growth
Resumo:
The evolution of crystallographic texture in a nanocrystalline nickel-20 wt% cobalt alloy has been investigated for deformation up to large strains. The effect of texture on magnetic properties has been evaluated. The material shows characteristic copper-type texture at large strain levels. Microstructural examinations indicate that the evolution of texture is assisted by deformation-induced grain growth. The values of saturation magnetization and coercivity have been correlated with the crystallographic texture and grain size. (C) 2014 Elsevier B.V. All rights reserved.
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This paper deals with dynamic recrystallization (DRX), static recrystallization, and grain growth phenomena of pure magnesium after equal channel angular pressing (ECAP) by route A and B-C at 523 K (250 A degrees C) followed by 80 pct cold rolling. The ECAP-deformed and the subsequently rolled samples were annealed at 373 K and 773 K (100 A degrees C and 500 A degrees C). The associated changes in the microstructure and texture were studied using electron back-scattered diffraction. ECAP produced an average grain size of 12 to 18 A mu m with B and C-2 fiber textures. Subsequent rolling led to an average grain size 8 to 10 A mu m with basal texture fiber parallel to ND. There was no noticeable increase in the average grain size on annealing at 373 K (100 A degrees C). However, significant increase in the average grain size occurred at 773 K (500 A degrees C). The occurrence of different DRX mechanisms was detected: discontinuous dynamic recrystallization was attributed to basal slip activity and continuous dynamic recovery and recrystallization to prismatic/pyramidal slip systems. Only continuous static recrystallization could be observed on annealing.
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Friction-stir processing (FSP) has been proven as a successful method for the grain refinement of high-strength aluminum alloys. The most important attributes of this process are the fine-grain microstructure and characteristic texture, which impart suitable properties in the as-processed material. In the current work, FSP of the precipitation-hardenable aluminum alloy 2219 has been carried out and the consequent evolution of microstructure and texture has been studied. The as-processed materials were characterized using electron back-scattered diffraction, x-ray diffraction, and electron probe microanalysis. Onion-ring formation was observed in the nugget zone, which has been found to be related to the precipitation response and crystallographic texture of the alloy. Texture development in the alloy has been attributed to the combined effect of shear deformation and dynamic recrystallization. The texture was found heterogeneous even within the nugget zone. A microtexture analysis revealed the dominance of shear texture components, with C component at the top of nugget zone and the B and A(2)* components in the middle and bottom. The bulk texture measurement in the nugget zone revealed a dominant C component. The development of a weaker texture along with the presence of some large particles in the nugget zone indicates particle-stimulated nucleation as the dominant nucleation mechanism during FSP. Grain growth follows the Burke and Turnbull mechanism and geometrical coalescence.
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Experiments on micrograined (mg) and nanocrystalline (nc) Ni revealed strengthening and weakening following repeated dynamic impact. The strengthening in mg-Ni arises from intragranular dislocations without a significant change in grain size, whereas the weakening in nc-Ni is due to concurrent grain growth. The strength of mg and nc-Ni samples after deformation settles at similar to 900 MPa, with differing contributions from intragranular dislocations and grain sizes. (C) 2015 Elsevier B.V. All rights reserved.
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Amorphous Silicon Germanium (a-SiGe) thin films of 500 nm thickness are deposited on silicon substrates using Plasma Enhanced Chemical Vapour Deposition (PECVD). To obtain polycrystalline nature of films, thermal annealing is done at various temperature (450-600 degrees C) and time (1-10 h). The surface morphology of the pre- and post-annealed films is investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystallographic structure of the film is obtained by X-ray diffraction method. Raman spectroscopy is carried out to quantify the Ge concentration and the degree of strain relaxation in the film. Nano-indentation is performed to obtain the mechanical properties of the film. It is found that annealing reduces the surface roughness of the film and increases the Ge concentration in the film. The grain size of the film increases with increase in annealing temperature. The grain size is found to decrease with increase in annealing time up to 5 h and then increased. The results show that 550 degrees C for 5 h is the critical annealing condition for variation of structural and mechanical properties of the film. Recrystallization starts at this condition and results in finer grains. An increase in hardness value of 7-8 GPa has been observed. Grain growth occurs above this critical annealing condition and degrades the mechanical properties of the film. The strain in the film is only relaxed to about 55% even for 10 h of annealing at 600 degrees C. Transmission Electron Microscopy (TEM) observations show that the strain relaxation occurs by forming misfit dislocations and these dislocations are confined to the SiGe/Si interface. (C) 2015 Elsevier Ltd. All rights reserved.
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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.
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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.
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An investigation has been made into the plastic deformation behavior of a Monel alloy deformed at high strain rate of 10(5) s(-1) by split Hopkinson bar. The results reveal that there are some equiaxed grains with an average size of 150 nm in diameter in the center of the shear bands, suggesting that this microstructure characteristics be developed by dynamic recrystallization, arising from the deformation and the rapid temperature rise in the band. Analysis shows that the plastic strain rate and the mobile dislocation density play a key role in the new crystallized grain formation and growth. Based on grain boundary energy change and diffusion mechanism, the grain growth kinetics is developed for plastic deformation at a high strain rate.
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A transmission electron microscopy (TEM) study has been carried out to uncover how dislocations and twins accommodate large plastic strains and accumulate in very small nanocrystalline Ni grains during low-temperature deformation. We illustrate dislocation patterns that suggest preferential deformation and nonuniform defect storage inside the nanocrystalline grain. Dislocations are present in individual and dipole configurations. Most dislocations are of the 60 degrees type and pile up on (111) slip planes. Various deformation responses, in the forms of dislocations and twinning, may simultaneously occur inside a nanocrystalline grain. Evidence for twin boundary migration has been obtained. The rearrangement and organization of dislocations, sometimes interacting with the twins, lead to the formation of subgrain boundaries, subdividing the nanograin into mosaic domain structures. The observation of strain (deformation)-induced refinement contrasts with the recently reported stress-assisted grain growth in nanocrystalline metals and has implications for understanding the stability and deformation behavior of these highly nonequilibrium materials.
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Transparent polycrystalline Yb:YAG ceramics were fabricated by solid-state reactive sintering a mixture of commercial Al2O3, Y2O3, and Yb2O3 powders. The powders were mixed in ethanol and doped with 0.5 wt% tetraethoxysilane, dried, and pressed. Pressed samples were sintered at 1730 degrees C in vacuum. Transparent fully dense samples with grain sizes of several micrometers were obtained. The phase from 1500 degrees to 1700 degrees C was important for the grain growth, in which the grains grew quickly and a mass of pores were eliminated from the body of the sample. Annealing was an important step to remove the vacancies of oxygen and transform Yb2+ to Yb3+. The 1 at.% Yb:YAG ceramic sample was pumped by a diode laser to study the laser properties. The maximum output power of 1.02 W was obtained with a slope efficiency of 25% at 1030 nm. The size of the lasering sample was 4 mm x 4 mm x 3 mm.
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Gd-Ba-Cu-O (GdBCO) single grains have been previously melt-processed successfully in air using a generic Mg-Nd-Ba-Cu-O (Mg-NdBCO) seed crystal. Previous research has revealed that the addition of a small amount of BaO 2 to the precursor powders prior to melt processing can suppress the formation of Gd/Ba solid solution, and lead to a significant improvement in superconducting properties of the single grains. Research into the effects of a higher Ba content on single grain growth, however, has been limited by the relatively small grain size in the earlier studies. This has been addressed by developing Ba-rich precursor compounds Gd-163 and Gd-143, fabricated specifically to enable the presence of greater concentrations of Ba during the melt process. In this study, we propose a new processing route for the fabrication of high performance GdBCO single grain bulk superconductors in air by enriching the precursor powder with these new Ba rich compounds. The influence of the addition of the new compounds on the microstructures and superconducting properties of GdBCO single grains is reported. © 2008 IOP Publishing Ltd.
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Single grain, (RE)BCO bulk superconductors in large or complicated geometries are required for a variety of potential applications, such as motors and generators and magnetic shielding devices. As a result, top, multi-seeded, melt growth (TMSMG) has been investigated over the past two years in an attempt to enlarge the size of (RE)BCO single grains specifically for such applications. Of these multi-seeding techniques, so-called bridge seeding provides the best alignment of two seeds in a single grain growth process. Here we report, for the first time, the successful growth of YBCO using a special, 45{\deg} - 45{\deg}, arrangement of bridge-seeds. The superconducting properties, including trapped field, of the multi-seeded YBCO grains have been measured for different bridge lengths of the 45{\deg}- 45{\deg} bridge-seeds. The boundaries at the impinging growth front and the growth features of the top, multi-seeded surface and cross-section of the multi-seeded, samples have been analysed using optical microscopy. The results suggest that an impurity-free boundary between the two seeds of each leg of the bridge-seed can form when 45{\deg}- 45{\deg} bridge-seeds are used to enlarge the size of YBCO grains.
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Polycrystalline nano-grain-boundary multi-doping ZnO-based nonlinear varistors with higher concentration additives have been fabricated by sol-gel and standard solid-state reaction method, of which the best sample has a very high threshold voltage of E-b = 3300 V/mm. The effect of sintering processes, sintering temperature and sintering time, and that of additive concentration of Bi2O3 on E-b of the samples are systematically investigated. The results show that the great merit of sol-gel method is its high threshold voltage obtained by a lower sintering temperature than the solid-state reaction method. The present work also shows that five phases including solid-state sintering, rich Bi liquid phase formation and ZnO as well as other additive dissolution, ZnO grain growth, the secondary phase sufficient formation and evolution have been experienced at different sintering temperatures. The hole type defect and nonhomogeneity of the microstructure will lead to the decrease of threshold voltage, i.e., the grain size and the homogeneity of the material will be important factors and directly affect the characteristic of the varistor. The sintering characteristic and the influence of Bi2O3 content on the threshold voltage are also discussed. (c) 2004 Elsevier B.V. All rights reserved.
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Cu samples were subjected to high-pressure torsion (HPT) with up to 6 turns at room temperature (RT) and liquid nitrogen temperature (LNT), respectively. The effects of temperature on grain refinement and microhardness variation were investigated. For the samples after HPT processing at RT, the grain size reduced from 43 mu m to 265 nm, and the Vickers microhardness increased from HV52 to HV140. However, for the samples after HPT processing at LNT, the value of microhardness reached its maximum of HV150 near the center of the sample and it decreased to HV80 at the periphery region. Microstructure observations revealed that HPT straining at LNT induced lamellar structures with thickness less than 100 nm appearing near the central region of the sample, but further deformation induced an inhomogeneous distribution of grain sizes, with submicrometer-sized grains embedded inside micrometer-sized grains. The submicrometer-sized grains with high dislocation density indicated their nonequilibrium nature. On the contrary, the micrometer-sized grains were nearly free of dislocation, without obvious deformation trace remaining in them. These images demonstrated that the appearance of micrometer-sized grains is the result of abnormal grain growth of the deformed fine grains.
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Solidification behavior and microstructural evolution of surface modified layers in plasma cladding technique are studied via numerical simulations. Both the coupling effect of temperature and solid volume fraction are considered in the proposed thermal analytical model, by which the transient temperature distributions are calculated and the shape of melting pool is determined. Furthermore, we perform microscopic thermal analysis on the nucleation and growth behaviors of ceramic hardening phases and dendrites, as well as the kinetics of related two-phase flow systems. By comparing with experimental observations, the evolution mechanisms of the morphology of Al2O3 ceramic hardening layer are explained. Based on the above results, a relationship among the scanning velocity of plasma stream, dendritic growth rate and the advancing speed of solid/liquid interface is found, and an energy criterion is proposed for predicting the pushing/engulfing transition of ceramic particles by grain growth fronts. (C) 2009 Elsevier B.V. All rights reserved.