Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators

We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for electroacoustic devices operating in the super high frequency range. Superior crystal quality and low stress films with thicknesses as low as 160 nm are achieved after a radio frequency plasma treatment of the iridium electrode followed by a two-step alternating current reactive magnetron sputtering of an aluminum target, which promotes better conditions for the nucleation of well textured AlN films in the very first stages of growth. Solidly mounted resonators tuned around 8 GHz with effective electromechanical coupling factors of 5.8% and quality factors Q up to 900 are achieved.

Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated.

Loss model for a high frequency and low load DC/DC synchronous buck converter

This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time and a good accuracy. It has been validated by simulation and experimentally with one Ga, power transistor and two Si MOSFETs. Results show good agreement between measurements and the model.

Hybrid behavioral-analytical loss model for a high frequency and low load DC/DC buck converter

This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time (below 8.5 seconds) and a good accuracy, which makes this model suitable for the optimization process of the losses in the design of a converter. It has been validated by simulation and experimentally with one GaN power transistor and three Si MOSFETs. Results show good agreement between measurements and the model

Comparison of numerical models for vibro-acoustic analysis of structural panels in low modal density range engaging air layers

During launch, satellite and their equipment are subjected to loads of random nature and with a wide frequency range. Their vibro-acoustic response is an important issue to be analysed, for example for folded solar arrays and antennas. The main issue at low modal density is the modelling combinations engaging air layers, structures and external fluid. Depending on the modal density different methodologies, as FEM, BEM and SEA should be considered. This work focuses on the analysis of different combinations of the methodologies previously stated used in order to characterise the vibro-acoustic response of two rectangular sandwich structure panels isolated and engaging an air layer between them under a diffuse acoustic field. Focusing on the modelling of air layers, different models are proposed. To illustrate the phenomenology described and studied, experimental results from an acoustic test on an ARA-MKIII solar array in folded configuration are presented along with numerical results.

Broadband active differential array for the mid-frequency SKA band

This paper presents the design and characterization process of an active array demonstrator for the mid-frequency range (i.e., 300 MHz-1000 MHz) of the future Square Kilometre Array (SKA) radio telescope. This demonstrator, called FIDA3 (FG-IGN: Fundación General Instituto Geográfico Nacional - Differential Active Antenna Array), is part of the Spanish contribution for the SKA project. The main advantages provided by this design include the use of a dielectric-free structure, and the use of a fully-differential receiver in which differential low-noise amplifiers (LNAs) are directly connected to the balanced tapered-slot antennas (TSAs). First, the radiating structure and the differential low-noise amplifiers were separately designed and measured, obtaining good results (antenna elements with low voltage standing-wave ratios, array scanning capabilities up to 45°, and noise temperatures better than 52 K with low-noise amplifiers at room temperature). The potential problems due to the differential nature of the proposed solution are discussed, so some effective methods to overcome such limitations are proposed. Second, the complete active antenna array receiving system was assembled, and a 1 m2 active antenna array tile was characterized.

Suppression of spurious intermediate frequency modes in under-integrated elements by combined stiffness/viscous stabilization

Solutions employing perturbation stiffness or viscous hourglass control with one-point quadrature finite elements often exhibit spurious modes in the intermediate frequency range. These spurious frequencies are demonstrated in several examples and their origin is explained. Then it is shown that by critically damping the hourglass modes, these spurious mid-range frequency modes can be suppressed. Estimates of the hourglass frequency and damping coefficients are provided for the plane 4-node quadrilateral and a 4-node shell element. Results are presented that show almost complete annihilation of spurious intermediate frequency modes for both linear and non-linear problems. Copyright (c) 2005 John Wiley & Sons, Ltd.

Electrical impedance tomography in extremely prematurely born infants and during high frequency oscillatory ventilation analyzed in the frequency domain

Functional electrical impedance tomography (EIT) measures relative impedance change that occurs in the chest during a distinct observation period and an EIT image describing regional relative impedance change is generated. Analysis of such an EIT image may be erroneous because it is based on an impedance signal that has several components. Most of the change in relative impedance in the chest is caused by air movement but other physiological events such as cardiac activity change in end expiratory level or pressure swings originating from a ventilator circuit can influence the impedance signal. We obtained EIT images and signals in spontaneously breathing healthy adults, in extremely prematurely born infants on continuous positive airway pressure and in ventilated sheep on conventional mechanical or high frequency oscillatory ventilation (HFOV). Data were analyzed in the frequency domain and results presented after band pass filtering within the frequency range of the physiological event of interest. Band pass filtering of EIT data is necessary in premature infants and on HFOV to differentiate and eliminate relative impedance changes caused by physiological events other than the one of interest.

Functional connectivity of gamma EEG activity is modulated at low frequency during conscious recollection

We examined two subjectively distinct memory states that are elicited during recognition memory in humans and compared them in terms of the gamma oscillations (20–60 Hz) in the electroencepahalogram (EEG) that they induced. These subjective states, ‘recollection’ and ‘familiarity’ both entail correct recognition but one involves a clear and conscious recollection of the event including memory for contextual detail whilst the other involves a sense of familiarity without clear recollection. Here we show that during a verbal recognition memory test, the subjective experience of ‘recollection’ induced higher amplitude gamma oscillations than the subjective experience of ‘familiarity’ in the time period 300–500 ms after stimulus presentation. Recollection, but not familiarity, was also associated with greater functional connectivity in the gamma frequency range between frontal and parietal sites. Furthermore, the magnitude of the gamma functional connectivity varied over time and was modulated at 3 Hz. Previous studies in animals have shown local theta frequency modulation (3–7 Hz) of gamma-oscillations but this is the first time that a similar effect has been reported in the human EEG.

Low frequency dielectric spectroscopy of bitumen binders as an indicator of adhesion potential to quartz aggregates using Portland cement

The purpose of this investigation was to interpret the bitumen-aggregate adhesion based on the dielectric spectroscopic response of individual material components utilizing their dielectric constants, refractive indices and average tangent of the dielectric loss angle (average loss tangent). Dielectric spectroscopy of bitumen binders at room temperature was performed in the frequency range of 0.01–1000 Hz. Dielectric spectroscopy is an experimental method for characterizing the dielectric permittivity of a material as a function of frequency. Adhesion data has been determined using the Rolling bottle method. The results show that the magnitude of the average tangent of the dielectric loss angle (average loss tangent) depends on bitumen type. The average loss tangent in the frequency range 0.01–1 Hz is introduced as a potential indicator for predicting polarizability and, thereby, adhesion potential of bitumen binders to quartz aggregates when using Portland cement. In order to obtain acceptable adhesion of 70/100 penetration grade bitumen binders and quartz aggregates when using Portland cement, it is suggested that the binder have an average tan δ > 0.035 in the frequency range 0.01–1 Hz.

A LOFAR mini-survey for low-frequency radio emission from the nearest brown dwarfs

We have conducted a mini-survey for low-frequency radio emission from some of the closest brown dwarfs to the Sun with rapid rotation rates: SIMP J013656.5 +093347, WISEPC 150649.97+702736.0, and WISEPA J174124.26+255319.5.We have placed robust 3s upper limits on the flux density in the 111 – 169 MHz frequency range for these targets: WISE 1506: < 0:72 mJy; WISE 1741: < 0:87 mJy; SIMP 0136: < 0:66 mJy. At 8 hours of integration per target to achieve these limits, we find that systematic and detailed study of this class of object at LOFAR frequencies will require a substantial dedication of resources.

Components and circuits for tunneling diode based high frequency sources

Terahertz (THz) technology has been generating a lot of interest because of the potential applications for systems working in this frequency range. However, to fully achieve this potential, effective and efficient ways of generating controlled signals in the terahertz range are required. Devices that exhibit negative differential resistance (NDR) in a region of their current-voltage (I-V ) characteristics have been used in circuits for the generation of radio frequency signals. Of all of these NDR devices, resonant tunneling diode (RTD) oscillators, with their ability to oscillate in the THz range are considered as one of the most promising solid-state sources for terahertz signal generation at room temperature. There are however limitations and challenges with these devices, from inherent low output power usually in the range of micro-watts (uW) for RTD oscillators when milli-watts (mW) are desired. At device level, parasitic oscillations caused by the biasing line inductance when the device is biased in the NDR region prevent accurate device characterisation, which in turn prevents device modelling for computer simulations. This thesis describes work on I-V characterisation of tunnel diode (TD) and RTD (fabricated by Dr. Jue Wang) devices, and the radio frequency (RF) characterisation and small signal modelling of RTDs. The thesis also describes the design and measurement of hybrid TD oscillators for higher output power and the design and measurement of a planar Yagi antenna (fabricated by Khalid Alharbi) for THz applications. To enable oscillation free current-voltage characterisation of tunnel diodes, a commonly employed method is the use of a suitable resistor connected across the device to make the total differential resistance in the NDR region positive. However, this approach is not without problems as the value of the resistor has to satisfy certain conditions or else bias oscillations would still be present in the NDR region of the measured I-V characteristics. This method is difficult to use for RTDs which are fabricated on wafer due to the discrepancies in designed and actual resistance values of fabricated resistors using thin film technology. In this work, using pulsed DC rather than static DC measurements during device characterisation were shown to give accurate characteristics in the NDR region without the need for a stabilisation resistor. This approach allows for direct oscillation free characterisation for devices. Experimental results show that the I-V characterisation of tunnel diodes and RTD devices free of bias oscillations in the NDR region can be made. In this work, a new power-combining topology to address the limitations of low output power of TD and RTD oscillators is presented. The design employs the use of two oscillators biased separately, but with the combined output power from both collected at a single load. Compared to previous approaches, this method keeps the frequency of oscillation of the combined oscillators the same as for one of the oscillators. Experimental results with a hybrid circuit using two tunnel diode oscillators compared with a single oscillator design with similar values shows that the coupled oscillators produce double the output RF power of the single oscillator. This topology can be scaled for higher (up to terahertz) frequencies in the future by using RTD oscillators. Finally, a broadband Yagi antenna suitable for wireless communication at terahertz frequencies is presented in this thesis. The return loss of the antenna showed that the bandwidth is larger than the measured range (140-220 GHz). A new method was used to characterise the radiation pattern of the antenna in the E-plane. This was carried out on-wafer and the measured radiation pattern showed good agreement with the simulated pattern. In summary, this work makes important contributions to the accurate characterisation and modelling of TDs and RTDs, circuit-based techniques for power combining of high frequency TD or RTD oscillators, and to antennas suitable for on chip integration with high frequency oscillators.

Voice acoustic profi le of males exposed to occupational infrasound and low-frequency noise

Background: Vibroacoustic disease (VAD) is a systematic pathology characterized by the abnormal growth of extra-cellular matrices in the absence of infl ammatory processes, namely collagen and elastin, both of which are abundant in the basement membrane zone of the vocal folds. VAD can develop due to long-term exposure to infrasound and low-frequency noise (ILFN, <500 Hz). Mendes et al. (2006, 2008 and 2012) revealed that ILFN-exposed males and females presented an increased fundamental frequency (F0), decreased jitter %, and reduced maximum phonation frequency range, when compared with normative data. Temporal measures of maximum phonation time and S/Z ratio were generally reduced. Study Aims: Herein, the same voice acoustic parameters of 48 males, 36 airline pilots and 12 cabin crewmembers (age range 25-60 years) were studied, and the effects and interaction of age and years of ILFN exposure were investigated within those parameters. ILFN-exposure time (i.e. years of professional activity) ranged from 3.5 to 36 years. Materials and Methods: Spoken and sung phonatory tasks were recorded with a DA-P1 Tascam DAT and a C420III PP AKG head-worn microphone, positioned at 3 cm from the mouth. Acoustic analyses were performed using KayPENTAX Computer Speech Lab and Multi-Dimensional Voice Program. Results: Results revealed that even though pilots and cabin crewmembers were exposed to occupational environments with distinct (ILFN-rich) acoustical frequency distributions and sound pressure levels, differences in the vocal acoustic parameters were not evident. Analyzing data from both professional groups (N = 48) revealed that F0 increased signifi cantly with the number of years of professional activity. Conclusion: These results strongly suggest that the number of years of professional activity (i.e. total ILFN exposure time) had a signifi cant effect on F0. Furthermore, they may refl ect the histological changes specifi cally observed on the vocal folds of ILFN-exposed professionals.

Change in dielectric properties in the microwave frequency region of polypyrrole-coated textiles during aging

Complex permittivity of conducting polypyrrole (PPy)-coated Nylon-Lycra textiles ismeasured using a free space transmission measurement technique over the frequency range of1–18 GHz. The aging of microwave dielectric properties and reflection, transmission and absorptionfor a period of 18 months is demonstrated. PPy-coated fabrics are shown to be lossy over thefull frequency range. The levels of absorption are shown to be higher than reflection in the testedsamples. This is attributed to the relatively high resistivity of the PPy-coated fabrics. Both the dopantconcentration and polymerisation time affect the total shielding effectiveness and microwave agingbehaviour. Distinguishing either of these two factors as being exclusively the dominant mechanismof shielding effectiveness is shown to be difficult. It is observed that the PPy-coated Nylon-Lycrasamples with a p-toluene sulfonic acid (pTSA) concentration of 0.015 M and polymerisation times of60 min and 180 min have 37% and 26% decrease in total transmission loss, respectively, upon agingfor 72 weeks at room temperature (20 C, 65% Relative humidity (RH)). The concentration of thedopant also influences the microwave aging behaviour of the PPy-coated fabrics. The samples with ahigher dopant concentration of 0.027 mol/L pTSA are shown to have a transmission loss of 32.6% and16.5% for short and long polymerisation times, respectively, when aged for 72 weeks. The microwaveproperties exhibit better stability with high dopant concentration and/or longer polymerization times.High pTSA dopant concentrations and/or longer polymerisation times result in high microwaveinsertion loss and are more effective in reducing the transmission and also increasing the longevity ofthe electrical properties.