969 resultados para Field Trip in SW Angola


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We report the evidence for the anisotropic magnetoimpedance behavior in (001) oriented La0.7Sr0.3MnO3 (LSMO) thin films, in low frequency-low magnetic field regime. (001) oriented LSMO thin films were deposited using pulsed laser deposition and characterized with X-ray diffraction and temperature dependent magnetization studies. In the in-plain configuration, an ac magnetoresistance (MRac) of similar to -0.5% was observed at 1000 Oe, at 100 Hz frequency in these films. The MRac was found to decrease with increase in frequency. We observe increases in MRac at low frequency, indicating major contribution for change of permeability from domain wall motion. At higher frequencies, it decreases due to decrease in transverse permeability, resulting from dampening of domain wall motion. Out-of-plane configuration showed MRac similar to 5.5% at 1000 Oe, at 100 Hz frequency. The MRac turned from positive to negative with increase in frequency in out-of-plane configuration. These changes are attributed to the change in permeability of the film with the frequency and applied magnetic field.

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We propose a novel numerical method based on a generalized eigenvalue decomposition for solving the diffusion equation governing the correlation diffusion of photons in turbid media. Medical imaging modalities such as diffuse correlation tomography and ultrasound-modulated optical tomography have the (elliptic) diffusion equation parameterized by a time variable as the forward model. Hitherto, for the computation of the correlation function, the diffusion equation is solved repeatedly over the time parameter. We show that the use of a certain time-independent generalized eigenfunction basis results in the decoupling of the spatial and time dependence of the correlation function, thus allowing greater computational efficiency in arriving at the forward solution. Besides presenting the mathematical analysis of the generalized eigenvalue problem on the basis of spectral theory, we put forth the numerical results that compare the proposed numerical method with the standard technique for solving the diffusion equation.

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This article reports the intermittent pulse electric field stimulus mediated in vitro cellular response of L929 mouse fibroblast/SaOS2 osteoblast-like cells on austenitic steel substrates in reference to the field strength dependent behavior. The cellular density and morphometric analyses revealed that the optimal electric (E) fields for the maximum cell density of adhered L929 (similar to 270 % to that of untreated sample) and SaOS2 (similar to 280 % to that of untreated sample) cells are 1 V (0.33 V/cm) and 2 V (0.67 V/cm), respectively. The trend in aspect ratio of elongated SaOS2 cells did not indicate any significant difference among the untreated and treated (up to 3.33 V/cm) cells. The average cell and nucleus areas (for SaOS2 cells) were increased with an increase in the applied voltage up to 8 V (2.67 V/cm) and reduced thereafter. However, the ratio of nucleus to total cell area was increased significantly on the application of higher voltages (2-10 V), indicating the possible influence of E-field on cell growth. Further, the cell density results were compared with earlier results obtained with sintered Hydroxyapatite (HA) and HA-BaTiO3 composites and such comparison revealed that the enhanced cell density on steel sample occurs upon application of much lower field strength and stimulation time. This indicates the possible role of substrate conductivity towards cell growth in pulsed E-field mediated culture conditions.

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A one-dimensional coupled multi-physics based model has been developed to accurately compute the effects of electrostatic, mechanical, and thermal field interactions on the electronic energy band structure in group III-nitrides thin film heterostructures. Earlier models reported in published literature assumes electro-mechanical field with uniform temperature thus neglecting self-heating. Also, the effects of diffused interface on the energy band structure were not studied. We include these effects in a self-consistent manner wherein the transport equation is introduced along with the electro-mechanical models, and the lattice structural variation as observed in experiments are introduced at the interface. Due to these effects, the electrostatic potential distribution in the heterostructure is altered. The electron and hole ground state energies decrease by 5% and 9%, respectively, at a relative temperature of 700 K, when compared with the results obtained from the previously reported electro-mechanical model assuming constant and uniform temperature distribution. A diffused interface decreases the ground state energy of electrons and holes by about 11% and 9%, respectively, at a relative temperature of 700 K when compared with the predictions based on uniform temperature based electro-mechanical model. (C) 2013 AIP Publishing LLC.

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Plastic heterogeneity in indentation is fundamental for understanding mechanics of hardness testing and impression-based deformation processing methods. The heterogeneous deformation underlying plane-strain indentation was investigated in plastic loading of copper by a flat punch. Deformation parameters were measured, in situ, by tracking the motion of asperities in high-speed optical imaging. These measurements were coupled with multi-scale analyses of strength, microstructure and crystallographic texture in the vicinity of the indentation. Self-consistency is demonstrated in description of the deformation field using the in situ mechanics-based measurements and post-mortem materials characterization. Salient features of the punch indentation process elucidated include, among others, the presence of a dead-metal zone underneath the indenter, regions of intense strain rate (e. g. slip lines) and extent of the plastic flow field. Perhaps more intriguing are the transitions between shear-type and compression-type deformation modes over the indentation region that were quantified by the high-resolution crystallographic texture measurements. The evolution of the field concomitant to the progress of indentation is discussed and primary differences between the mechanics of indentation for a rigid perfectly plastic material and a strain-hardening material are described.

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We report inelastic light scattering experiments on superconductor Ce0.6Y0.4FeAsO0.8F0.2 from 4K to 300K covering the superconducting transition temperature T-c similar to 48.6K. A strong evidence of the superconductivity induced phonon renormalization for the A(1g) phonon mode near 150cm(-1) associated with the Ce/Y vibrations is observed as reflected in the anomalous red-shift and decrease in the linewidth below T-c. Invoking the coupling of this mode with the superconducting gap, the superconducting gap (2 Delta) at zero temperature is estimated to be similar to 20meV i.e the ratio 2 Delta(0)/k(B)T(c) is similar to 5, suggesting Ce0.6Y0.4FeAsO0.8F0.2 to belong to the class of strong coupling superconductors. In addition, the mode near 430cm(-1) associated with Ce3+ crystal field excitation also shows anomalous increase in its linewidth below T-c suggesting strong coupling between crystal field excitation and the superconducting quasi-particles.

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Enhancement of localized electric field near metal (plasmonic) nanostructures can have various interesting applications in sensing, imaging, photovoltage generation etc., for which significant efforts are aimed towards developing plasmonic systems with well designed and large electromagnetic response. In this paper, we discuss the wafer scale fabrication and optical characterization of a unique three dimensional plasmonic material. The near field enhancement in the visible range of the electromagnetic spectrum obtained in these structures (order of 106), is close to the fundamental limit that can be obtained in this and similar EM field enhancement schemes. The large near field enhancement has been reflected in a huge Raman signal of graphene layer in close proximity to the plasmonic system, which has been validated with FEM simulations. We have integrated graphene photodetectors with this material to obtain record photovoltage generation, with responsivity as high as A/W. As far as we know, this is the highest sensitivity obtained in any plasmonic-graphene hybrid photodetection system till date.

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An experimental study of plane strain wedge indentation of a model porous brittle solid has been made to understand the effect of indentation parameters on the evolution of the deformation field and the accompanying volume change. A series of high-speed, high-resolution images of the indentation region and simultaneous measurements of load response were captured through the progression of the indentation process. Particle image velocimetry analysis of the images facilitated in situ measurement of the evolution of the resulting plastic zone in terms of incremental material displacement (velocity), strain rate, strain and volume change (e.g., local pore collapse). These measurements revealed initiation and propagation of flow localizations and fractures, as well as enabled estimate of volume changes occurring in the deformation zone. The results were directly compared with theoretical estimates of indentation pressure and deformation zone geometry and were used to validate a modified cavity expansion solution that incorporates effects of volume changes in the plastic zone. (C) 2015 Elsevier Ltd. All rights reserved.

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An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured v(sat) is discussed and compared with the theoretically predicted dependence over a range of temperatures.

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A simple composite design methodology has been developed from the basic principles of composite component failure. This design approach applies the principles of stress field matching to develop suitable reinforcement patterns around three-dimensional details such as lugs in mechanical components. The resulting patterns are essentially curvilinear orthogonal meshes, adjusted to meet the restrictions imposed by geometric restraints and the intended manufacturing process. Whilst the principles behind the design methodology can be applied to components produced by differing manufacturing processes, the results found from looking at simple generic example problems suggest a realistic and practical generic manufacturing approach. The underlying principles of the design methodology are described and simple analyses are used to help illustrate both the methodology and how such components behave. These analyses suggest it is possible to replace high-strength steel lugs with composite components whose strength-to-weight ratio is some 4-5 times better. © 1998 Elsevier Science Ltd. All rights reserved.

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Part I

Studies of vibrational relaxation in excited electronic states of simple diatomic molecules trapped in solid rare-gas matrices at low temperatures are reported. The relaxation is investigated by monitoring the emission intensity from vibrational levels of the excited electronic state to vibrational levels of the ground electronic state. The emission was in all cases excited by bombardment of the doped rare-gas solid with X-rays.

The diatomics studied and the band systems seen are: N2, Vegard-Kaplan and Second Positive systems; O2, Herzberg system; OH and OD, A 2Σ+ - X2IIi system. The latter has been investigated only in solid Ne, where both emission and absorption spectra were recorded; observed fine structure has been partly interpreted in terms of slightly perturbed rotational motion in the solid. For N2, OH, and OD emission occurred from v' > 0, establishing a vibrational relaxation time in the excited electronic state of the order, of longer than, the electronic radiative lifetime. The relative emission intensity and decay times for different v' progressions in the Vegard-Kaplan system are found to depend on the rare-gas host and the N2 concentration, but are independent of temperature in the range 1.7°K to 30°K.

Part II

Static crystal field effects on the absorption, fluorescence, and phosphorescence spectra of isotopically mixed benzene crystals were investigated. Evidence is presented which demonstrate that in the crystal the ground, lowest excited singlet, and lowest triplet states of the guest deviate from hexagonal symmetry. The deviation appears largest in the lowest triplet state and may be due to an intrinsic instability of the 3B1u state. High resolution absorption and phospho- rescence spectra are reported and analyzed in terms of site-splitting of degenerate vibrations and orientational effects. The guest phosphorescence lifetime for various benzene isotopes in C6D6 and sym-C6H3D3 hosts is presented and discussed.

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Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counter-propagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating. (c) 2006 Optical Society of America.