Helmholtz Fermi surface harmonics: an efficient approach for treating anisotropic problems involving Fermi surface integrals

We present a new efficient numerical approach for representing anisotropic physical quantities and/or matrix elements defined on the Fermi surface (FS) of metallic materials. The method introduces a set of numerically calculated generalized orthonormal functions which are the solutions of the Helmholtz equation defined on the FS. Noteworthy, many properties of our proposed basis set are also shared by the FS harmonics introduced by Philip B Allen (1976 Phys. Rev. B 13 1416), proposed to be constructed as polynomials of the cartesian components of the electronic velocity. The main motivation of both approaches is identical, to handle anisotropic problems efficiently. However, in our approach the basis set is defined as the eigenfunctions of a differential operator and several desirable properties are introduced by construction. The method is demonstrated to be very robust in handling problems with any crystal structure or topology of the FS, and the periodicity of the reciprocal space is treated as a boundary condition for our Helmholtz equation. We illustrate the method by analysing the free-electron-like lithium (Li), sodium (Na), copper (Cu), lead (Pb), tungsten (W) and magnesium diboride (MgB2)

Role of f electrons in the Fermi surface of the heavy fermion superconductor beta-YbAlB4.

We present a detailed quantum oscillation study of the Fermi surface of the recently discovered Yb-based heavy fermion superconductor beta-YbAlB4. We compare the data, obtained at fields from 10 to 45 T, to band structure calculations performed using the local density approximation. Analysis of the data suggests that f holes participate in the Fermi surface up to the highest magnetic fields studied. We comment on the significance of these findings for the unconventional superconducting properties of this material.

Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

The mechanical integrity of fuel pin cladding in a pulsed-beam accelerator driven subcritical reactor

The Accelerator Driven Subcritical Reactor (ADSR) is one of the reactor designs proposed for future nuclear energy production. Interest in the ADSR arises from its enhanced and intrinsic safety characteristics, as well as its potential ability to utilize the large global reserves of thorium and to burn legacy actinide waste from other reactors and decommissioned nuclear weapons. The ADSR concept is based on the coupling of a particle accelerator and a subcritical core by means of a neutron spallation target interface. One of the candidate accelerator technologies receiving increasing attention, the Fixed Field Alternating Gradient (FFAG) accelerator, generates a pulsed proton beam. This paper investigates the impact of pulsed proton beam operation on the mechanical integrity of the fuel pin cladding. A pulsed beam induces repetitive temperature changes in the reactor core which lead to cyclic thermal stresses in the cladding. To perform the thermal analysis aspects of this study a code that couples the neutron kinetics of a subcritical core to a cylindrical geometry heat transfer model was developed. This code, named PTS-ADS, enables temperature variations in the cladding to be calculated. These results are then used to perform thermal fatigue analysis and to predict the stress-life behaviour of the cladding. © 2011 Elsevier Ltd. All rights reserved.