A thermal-elastic analysis on laser-induced reverse bulging and plugging in circular brass foil

A new failure mode is observed in circular brass foils induced by laser beam. The new failure is based on the following experimental facts : (1) the peripheries of the circular brass foils are fixed and the surfaces of the foils are radiated by laser beam ; (2) the laser beam used is considered to be non-Gaussian spatially, actually an approximately uniform distribution limited in a certain size spot ; (3) the pulse on time of laser beam should be 250 μs, i.e. so called long duration pulse laser. The failure process consists of three stages ; i.e. thermal bulging, localized shear deformation and perforation by plugging. The word reverse in reverse bulging and plugging mode means that bulging and plugging occur in the direction of incident laser beam. To study the newly-discovered type of failure quantitatively, analytical solutions for the axisymmetric temperature field and deflection curve are derived. The calculated results show that the newly discovered failure mode is attributed to the spatial structure effect of laser beam indeed.

Shear deformation analysis on laser-induced reverse bulging and plugging

A new kind of failure mode is observed in circular brass foils in which their peripheries are fixed and their surfaces are subjected to a long pulsed laser over a central region. The failure is classified into three stages; they are referred to as thermal bulging, localized shear deformation and perforation by plugging. A distinct feature of the failure mode is that bulging and plugging occurred in the direction opposite to the incident laser beam. To study the failure mode, we investigate the non-linear response of heated, non-homogeneous circular plates. Based on the large deflection equations of Berger [J. Appl. Mech. 22 (3), 465-472 (1965)], Ohnabe and Mizuguchi [Int. J. Non-Linear Mech. 28 (4), 365-372 (1993)] and the parabolic shear deformation theory of Bhimaraddi and Stevens [J. Appl. Mech. 51 (1), 195-198 (1984)], we have derived new coupled governing equations of shear deformation and deflection. The new equations are solved, for the plate with a clamped edge, by the Galerkin and iterative methods. The numerical results for the shear deformation distribution are in good agreement with the experimental observation.

Residual Stress And Deformation Analysis Of Anodic Bonded Multi-Layer Of Glass And Aluminum

The bonding of glass wafer to aluminum foils in multi-layer assemblies was made by the common anodic bonding process. The bonding was performed at temperatures in the range 350-450 degrees C and with an applied voltage in the range 400-700 V under a pressure of 0.05 MPa. Residual stress and deformation in samples of two-layer (aluminum/glass) and three-layer (glass/aluminum/glass) were analyzed by nonlinear finite element simulation software MARC. The stress and strain varying with cooling time were obtained. The analyzed results show that deformation of the three-layer sample is significantly smaller than that of the two-layer sample, because of the symmetric structure of the three-layer sample. This has an important advantage in MEMS fabrication. The maximum equivalent stresses locate in the transition layer in both samples, which will become weakness in bonded sample.

Long pulsed laser induced reverse bulging and plugging

A new kind of failure mode is observed in circular brass foils whose peripheries are fixed and whose surfaces are subjected to a long pulsed laser over a central region. The failure is classified into three stages; they are referred to as thermal bulging, localized shear deformation and perforation by plugging. A distinct feature of the failure mode is that bulging and plugging occurred in the direction opposite to the incident laser beam. The failure mode is different from the well-known types of laser induced material damage, such as spallation, melting and/or vaporization.

Circular brass foil failed by plugging opposite to direction of incident laser beam

The peripheries of circular foils of 30 mm in diameter and 0.1 mm thick are fixed while their surfaces are subjected to a long pulsed laser over a central region that may vary from 2 mm to 6 mm in diameter. Failure is observed and classified into three stages; they are referred to as thermal bulging, localized shear deformation, and perforation by plugging. A distinct feature of the failure mode is that bulging and plugging occurred in the direction opposite to the incident laser beam. Such a phenomenon can be expected to occur for a laser intensity threshold value of about 0.61 x 10(6) W/cm(2) beyond which local melting of the material begins to take place.

微薄梁三点弯曲的尺度效应研究

应用高灵敏度的力传感器以及时间序列电子散斑干涉法,同时测出了不同厚度纯镍薄片三点弯曲试件的抗力与变形,得到薄梁中心点处的载荷与挠度曲线.应用Fleck和Hutchinson的偶应力理论,结合平面应变弯曲模型,建立了薄梁处于弹性状态和弹塑性状态的控制方程,应用Runge-Kutta法进行数值求解,并将计算得到的载荷-挠度曲线以及无量纲化弯矩-表面应变曲线和实验结果进行了比较.在理论计算过程中,没有拟合任何材料参数,所有的材料参数均来自实验测量的结果,材料特征尺度也是根据Stolken和Evans的工作给出的.结果表明:应用偶应力理论预测的结果和实验结果符合良好,而经典理论的预测结果与实验不相符合.

Large-eddy simulation of flows past a flapping airfoil using immersed boundary method

The numerical simulation of flows past flapping foils at moderate Reynolds numbers presents two challenges to computational fluid dynamics: turbulent flows and moving boundaries. The direct forcing immersed boundary (IB) method has been devel- oped to simulate laminar flows. However, its performance in simulating turbulent flows and transitional flows with moving boundaries has not been fully evaluated. In the present work, we use the IB method to simulate fully developed turbulent channel flows and transitional flows past a stationary/plunging SD7003 airfoil. To suppress the non-physical force oscillations in the plunging case, we use the smoothed discrete delta function for interpolation in the IB method. The results of the present work demonstrate that the IB method can be used to simulate turbulent flows and transitional flows with moving boundaries.

Cu2O substrates and epitaxial Cu2O/ZnO thin film hetero-structures for solar energy conversion

Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

Nonlinear laser focusing using a conical guide and generation of energetic ions

Using conventional methods, a laser pulse can be focused down to around 6-8 mu m, but further reduction of the spot size has proven to be difficult. Here it is shown by particle-in-cell simulation that with a hollow cone an intense laser pulse can be reduced to a tiny, highly localized, spot of around 1 mu m radius, accompanied by much enhanced light intensity. The pulse shaping and focusing effect is due to a nonlinear laser-plasma interaction on the inner surface of the cone. When a thin foil is attached to the tip of the cone, the cone-focused light pulse compresses and accelerates the ions in its path and can punch through the thin target, creating highly localized energetic ion bunches of high density.

Nanostructured tungsten trioxide photoanodes for solar energy conversion

Nanostructured tungsten trioxide (WO₃) photoelectrodes are potential candidates for the anodic portion of an integrated solar water-splitting device that generates hydrogen fuel and oxygen from water. These nanostructured materials can potentially offer improved performance in photooxidation reactions compared to unstructured materials because of enhancements in light scattering, increases in surface area, and their decoupling of the directions of light absorption and carrier collection. To evaluate the presence of these effects and their contributions toward energy conversion efficiency, a variety of nanostructured WO₃ photoanodes were synthesized by electrodeposition within nanoporous templates and by anodization of tungsten foils. A robust fabrication process was developed for the creation of oriented WO₃ nanorod arrays, which allows for control nanorod diameter and length. Films of nanostructured WO₃ platelets were grown via anodization, the morphology of the films was controlled by the anodization conditions, and the current-voltage performance and spectral response properties of these films were studied. The observed photocurrents were consistent with the apparent morphologies of the nanostructured arrays. Measurements of electrochemically active surface area and other physical characteristics were correlated with observed differences in absorbance, external quantum yield, and photocurrent density for the anodized arrays. The capability to quantify these characteristics and relate them to photoanode performance metrics can allow for selection of appropriate structural parameters when designing photoanodes for solar energy conversion.

Sputtering of uranium

Sputtering yields for uranium metal under bombardment by 13 - 120 keV protons and by 20 - 120 keV He+ are presented. Angular distributions of the material sputtered by these ions are also given. Sputtering yields for 40 and 80 keV Ar+ were measured as well.

The technique employed to make these measurements was the detection of fission tracks in mica produced by ^(235)U sputtered onto collector foils which were subsequently exposed to a high fluence of thermal neutrons. The technique is extremely sensitive and allowed the measurement of sputtering yields less than 10^(-4) atoms per ion. It also made possible a detailed study of the emission of chunks from the uranium targets during sputtering. Mass distributions of chunks emitted during bombardment by 40 - 120 keV protons and by 80 keV argon are presented.

Comparisons are made between the experimental results and those predicted by the Sigmund theory of sputtering.

Zn-VI/Cu2O Heterojunctions for Earth-Abundant Photovoltaics

The need for sustainable energy production motivates the study of photovoltaic materials, which convert energy from sunlight directly into electricity. This work has focused on the development of Cu₂O as an earth-abundant solar absorber due to the abundance of its constituent elements in the earth's crust, its suitable band gap, and its potential for low cost processing. Crystalline wafers of Cu₂O with minority carrier diffusion lengths on the order of microns can be manufactured in a uniquely simple fashion — directly from copper foils by thermal oxidation. Furthermore, Cu₂O has an optical band gap of 1.9 eV, which gives it a detailed balance energy conversion efficiency of 24.7% and the possibility for an independently connected Si/Cu₂O dual junction with a detailed balance efficiency of 44.3%.

However, the highest energy conversion efficiency achieved in a photovoltaic device with a Cu₂O absorber layer is currently only 5.38% despite the favorable optical and electronic properties listed above. There are several challenges to making a Cu₂O photovoltaic device, including an inability to dope the material, its relatively low chemical stability compared to other oxides, and a lack of suitable heterojunction partners due to an unusually small electron affinity. We have addressed the low chemical stability, namely the fact that Cu₂O is an especially reactive oxide due to its low enthalpy of formation (ΔH_f⁰ = -168.7 kJ/mol), by developing a novel surface preparation technique. We have addressed the lack of suitable heterojunction partners by investigating the heterojunction band alignment of several Zn-VI materials with Cu₂O. Finally, We have addressed the typically high series resistance of Cu₂O wafers by developing methods to make very thin, bulk Cu₂O, including devices on Cu₂O wafers as thin as 20 microns. Using these methods we have been able to achieve photovoltages over 1 V, and have demonstrated the potential of a new heterojunction material, Zn(O,S).

Electromagnetic decay of the 1.7- and 2.43-MeV levels in ^9Be

The 1.7- and 2.43-MeV levels in ⁹Be were populated with the reaction ¹¹B(d, α)⁹Be* by bombarding thin boron on carbon foils with 1.7-MeV deuterons. The alpha particles were analyzed in energy with a surface-barrier counter set at the unique kinematically determined angle and the recoiling ⁹Be nuclei at 90^o were analyzed in rigidity with a magnetic spectrometer, in energy by a surface-barrier counter at the spectrometer focus, and in velocity by the time delay between an alpha and a ⁹Be count. When a pulse from the spectrometer counter was in the appropriate delayed coincidence with a pulse from the alpha counter, the two pulses were recorded in a two-dimensional pulse height analyzer. Most of the ⁹Be* decay by particle breakup. Only those that gamma decay are detected by the spectrometer counter. Thus the experiment provides a direct measurement of Γ_rad/Γ. Analysis of 384 observed events gives Γ_rad/Γ = (1.16 ± 0.14) X 10^-4 for the 2.43-MeV level. Combining this ratio with the value of Γ_rad = 0.122 ± 0.015 eV found from inelastic electron scattering gives Γ = (1.05 ± 0.18) keV. For the 1.7-MeV level, an upper limit, Γ_rad/Γ ≤ 2.4 = 10^-5, was determined.

Sputtering of the gallium-indium eutectic alloy in the liquid phase

We have measured sputtering yields and angular distributions of sputtered atoms from both the solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy. This was done by Rutherford backscattering analysis of graphite collector foils. The solid eutectic target shows a predominance of indium crystallites on its surface which have to be sputtered away before the composition of the sputtered atoms equals the bulk target composition. The size of the crystallites depends upon the conditions under which the alloy is frozen. The sputtering of the liquid eutectic alloy by 15 keV Ar⁺ results in a ratio of indium to gallium sputtering yields which is 28 times greater than would be expected from the target stoichiometry. Furthermore, the angular distribution of gallium is much more sharply peaked about the normal to the target surface than the indium distribution. When the incident Ar⁺ energy is increased to 25 keV, the gallium distribution broadens to the same shape as the indium distribution. With the exception of the sharp gallium distribution taken from the liquid eutectic at 15 keV, all angular distributions from liquid targets fit a cos² θ function. An ion-scattering-spectroscopy analysis of the liquid eutectic alloy reveals a surface layer of almost pure indium. A thermodynamic explanation for this highly segregated layer is discussed. The liquid eutectic alloy provides us with a unique target system which allows us to estimate the fraction of sputtered material which comes from the first monolayer of the surface.

The parameter space of graphene chemical vapor deposition on polycrystalline Cu

A systematic study of the parameter space of graphene chemical vapor deposition (CVD) on polycrystalline Cu foils is presented, aiming at a more fundamental process rationale in particular regarding the choice of carbon precursor and mitigation of Cu sublimation. CH 4 as precursor requires H 2 dilution and temperatures ≥1000 °C to keep the Cu surface reduced and yield a high-quality, complete monolayer graphene coverage. The H 2 atmosphere etches as-grown graphene; hence, maintaining a balanced CH 4/H 2 ratio is critical. Such balance is more easily achieved at low-pressure conditions, at which however Cu sublimation reaches deleterious levels. In contrast, C 6H 6 as precursor requires no reactive diluent and consistently gives similar graphene quality at 100-150 °C lower temperatures. The lower process temperature and more robust processing conditions allow the problem of Cu sublimation to be effectively addressed. Graphene formation is not inherently self-limited to a monolayer for any of the precursors. Rather, the higher the supplied carbon chemical potential, the higher the likelihood of film inhomogeneity and primary and secondary multilayer graphene nucleation. For the latter, domain boundaries of the inherently polycrystalline CVD graphene offer pathways for a continued carbon supply to the catalyst. Graphene formation is significantly affected by the Cu crystallography; i.e., the evolution of microstructure and texture of the catalyst template form an integral part of the CVD process. © 2012 American Chemical Society.