Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Suppression of chaos through reverse period doubling in coupled directly modulated semiconductor lasers

The effect of coupling on two high frequency modulated semiconductor lasers is numerically studied. The phase diagrams and bifurcatio.n diagrams are drawn. As the coupling constant is increased the system goes from chaotic to periodic behavior through a reverse period doubling sequence. The Lyapunov exponent is calculated to characterize chaotic and periodic regions.

Numerical studies on bi-directionally coupled directly modulated semiconductor lasers

Results of a numerical study of synchronisation of two directly modulated semiconductor lasers, using bi-directional coupling, are presented. The effect of stepwise increase in the coupling strength (C) on the synchronisation of the chaotic outputs of two such lasers is studied, with the help of parameter space plots, synchronisation error plots, phase diagrams and time series outputs. Numerical results indicate that as C increases, the system achieves synchronisation as well as stability together with an increase in the output power. The stability of the synchronised states is checked by applying a perturbation to the system after it becomes synchronised and then noting the time it takes to regain synchronisation. For lower values of C the system does not regain synchronisation. But, with higher values synchronisation is regained within a very short time.

Study of Synchronisalion and Control of Chaos in Directly Modulated Semiconductor Lasers

Chaos is a subject oftopical interest and, studied in great detail in relation to its relevance in almost all branches of science, which include physical, chemical, and biological fields. Chaos in the literal sense signifies utter confusion, but the scientific community has differentiated chaos as deterministic chaos and white noise. Deterministic chaos implies the complex behaviour of systems, which are governed by deterministic laws. Behaviour of such systems often become unpredictable in the long run. This unpredictability arises from the sensitivity of the system to its initial conditions. The essential requirement for ‘sensitivity to initial condition’ is nonlinearity of the system. The only method for determining the future of such systems is numerically simulating its final state from a set ofinitial conditions. Synchronisation

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

Self-validating technique for the measurement of the linewidth enhancement factor in semiconductor lasers

A new method for measuring the linewidth enhancement factor (α-parameter) of semiconductor lasers is proposed and discussed. The method itself provides an estimation of the measurement error, thus self-validating the entire procedure. The α-parameter is obtained from the temporal profile and the instantaneous frequency (chirp) of the pulses generated by gain switching. The time resolved chirp is measured with a polarization based optical differentiator. The accuracy of the obtained values of the α-parameter is estimated from the comparison between the directly measured pulse spectrum and the spectrum reconstructed from the chirp and the temporal profile of the pulse. The method is applied to a VCSEL and to a DFB laser emitting around 1550 nm at different temperatures, obtaining a measurement error lower than ± 8%.

All-optical logic gates with 1550nm Fabry-Perot and distributed feedback semiconductor laser amplifiers

The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).

Temporally flat top pulse generation from gain switched semiconductor lasers based on a polarization interferometer with variable transfer function

We propose the use of a polarization based interferometer with variable transfer function for the generation of temporally flat top pulses from gain switched single mode semiconductor lasers. The main advantage of the presented technique is its flexibility in terms of input pulse characteristics, as pulse duration, spectral bandwidth and operating wavelength. Theoretical predictions and experimental demonstrations are presented and the proposed technique is applied to two different semiconductor laser sources emitting in the 1550 nm region. Flat top pulses are successfully obtained with input seed pulses with duration ranging from 40 ps to 100 ps.

High brightness semiconductor lasers as transmitters for space lidar systems

High brightness semiconductor lasers are potential transmitters for future space lidar systems. In the framework of the European Project BRITESPACE, we propose an all-semiconductor laser source for an Integrated Path Differential Absorption lidar system for column-averaged measurements of atmospheric CO2 in future satellite missions. The complete system architecture has to be adapted to the particular emission properties of these devices using a Random Modulated Continuous Wave approach. We present the initial experimental results of the InGaAsP/InP monolithic Master Oscillator Power Amplifiers, providing the ON and OFF wavelengths close to the selected absorption line around 1572 nm.

Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Random distributed feedback fibre lasers

The concept of random lasers exploiting multiple scattering of photons in an amplifying disordered medium in order to generate coherent light without a traditional laser resonator has attracted a great deal of attention in recent years. This research area lies at the interface of the fundamental theory of disordered systems and laser science. The idea was originally proposed in the context of astrophysics in the 1960s by V.S. Letokhov, who studied scattering with "negative absorption" of the interstellar molecular clouds. Research on random lasers has since developed into a mature experimental and theoretical field. A simple design of such lasers would be promising for potential applications. However, in traditional random lasers the properties of the output radiation are typically characterized by complex features in the spatial, spectral and time domains, making them less attractive than standard laser systems in terms of practical applications. Recently, an interesting and novel type of one-dimensional random laser that operates in a conventional telecommunication fibre without any pre-designed resonator mirrors-random distributed feedback fibre laser-was demonstrated. The positive feedback required for laser generation in random fibre lasers is provided by the Rayleigh scattering from the inhomogeneities of the refractive index that are naturally present in silica glass. In the proposed laser concept, the randomly backscattered light is amplified through the Raman effect, providing distributed gain over distances up to 100km. Although an effective reflection due to the Rayleigh scattering is extremely small (~0.1%), the lasing threshold may be exceeded when a sufficiently large distributed Raman gain is provided. Such a random distributed feedback fibre laser has a number of interesting and attractive features. The fibre waveguide geometry provides transverse confinement, and effectively one-dimensional random distributed feedback leads to the generation of a stationary near-Gaussian beam with a narrow spectrum. A random distributed feedback fibre laser has efficiency and performance that are comparable to and even exceed those of similar conventional fibre lasers. The key features of the generated radiation of random distributed feedback fibre lasers include: a stationary narrow-band continuous modeless spectrum that is free of mode competition, nonlinear power broadening, and an output beam with a Gaussian profile in the fundamental transverse mode (generated both in single mode and multi-mode fibres).This review presents the current status of research in the field of random fibre lasers and shows their potential and perspectives. We start with an introductory overview of conventional distributed feedback lasers and traditional random lasers to set the stage for discussion of random fibre lasers. We then present a theoretical analysis and experimental studies of various random fibre laser configurations, including widely tunable, multi-wavelength, narrow-band generation, and random fibre lasers operating in different spectral bands in the 1-1.6μm range. Then we discuss existing and future applications of random fibre lasers, including telecommunication and distributed long reach sensor systems. A theoretical description of random lasers is very challenging and is strongly linked with the theory of disordered systems and kinetic theory. We outline two key models governing the generation of random fibre lasers: the average power balance model and the nonlinear Schrödinger equation based model. Recently invented random distributed feedback fibre lasers represent a new and exciting field of research that brings together such diverse areas of science as laser physics, the theory of disordered systems, fibre optics and nonlinear science. Stable random generation in optical fibre opens up new possibilities for research on wave transport and localization in disordered media. We hope that this review will provide background information for research in various fields and will stimulate cross-disciplinary collaborations on random fibre lasers. © 2014 Elsevier B.V.

Optical trapping with Bessel beams generated from semiconductor lasers

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations.

Manipulation of microparticles using Bessel beams from semiconductor lasers

Optical manipulation of microscopic objects (including living cells) using Bessel beams from semiconductor lasers has been demonstrated for the first time. In addition, it has been found in the experiments that a Bessel beam of sufficient power from a semiconductor laser makes it possible to manipulate simultaneously several microscopic objects captured into its central lobe and the first ring. © 2014 Pleiades Publishing, Ltd.

Optical trapping with Bessel beams generated from semiconductor lasers

In this paper, we demonstrate, for the first time to the best of our knowledge, utilization of Bessel beams generated from a semiconductor laser for optical trapping and manipulation of microscopic particles including living cells. © 2014 OSA.