The treasure of the Oxus, with other objects from ancient Persia and India , bequeathed to the Trustees of the British museum by Sir Augustus Wollaston Franks ...

At head of title: Franks bequest.

Applied metallurgy for engineers.

Includes bibliographies and index.

Manufacturing engineering.

Includes bibliography.

Engineering manufacturing methods.

Includes bibliography.

The distribution of contact pressures in the rolling of metals

"This paper is an analysis of the data contained in a report of the ASME Research Committee on Plastic Flow of Metals entitled Rolling of metals."

The industrial arts of Scandinavia in the pagan time /

Cover title: Scandinavian arts.

Ten centuries of art. Its progress in Europe from the IXth to the XIXth century.

Architecture.--Sculpture.--Painting.--Metal work.--Ivory and wood carving.--Glass and pottery.--Textile fabrics.--Mosaic.

Oggetti artistici di metallo : esposizioni retrospettive e contemporanee di industrie artistiche : esposizione del 1886 /

Includes index.

Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes

We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions >= 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

Sheet Metal Department Students at Work

Students in the Sheet Metal Department at the New York Trade School are shown working on ductwork in a classroom at the school. Black and white photograph.