A framework for self-healing radiation-tolerant implementations on reconfigurable FPGAs

To increase the amount of logic available in SRAM-based FPGAs manufacturers are using nanometric technologies to boost logic density and reduce prices. However, nanometric scales are highly vulnerable to radiation-induced faults that affect values stored in memory cells. Since the functional definition of FPGAs relies on memory cells, they become highly prone to this type of faults. Fault tolerant implementations, based on triple modular redundancy (TMR) infrastructures, help to keep the correct operation of the circuit. However, TMR is not sufficient to guarantee the safe operation of a circuit. Other issues like the effects of multi-bit upsets (MBU) or fault accumulation, have also to be addressed. Furthermore, in case of a fault occurrence the correct operation of the affected module must be restored and the current state of the circuit coherently re-established. A solution that enables the autonomous correct restoration of the functional definition of the affected module, avoiding fault accumulation, re-establishing the correct circuit state in realtime, while keeping the normal operation of the circuit, is presented in this paper.

A modified debugging infrastructure to assist real time fault injection campaigns

Fault injection is frequently used for the verification and validation of the fault tolerant features of microprocessors. This paper proposes the modification of a common on-chip debugging (OCD) infrastructure to add fault injection capabilities and improve performance. The proposed solution imposes a very low logic overhead and provides a flexible and efficient mechanism for the execution of fault injection campaigns, being applicable to different target system architectures.

Studies on the universal parameters and onset of chaos in dissipative systems

It has become clear over the last few years that many deterministic dynamical systems described by simple but nonlinear equations with only a few variables can behave in an irregular or random fashion. This phenomenon, commonly called deterministic chaos, is essentially due to the fact that we cannot deal with infinitely precise numbers. In these systems trajectories emerging from nearby initial conditions diverge exponentially as time evolves)and therefore)any small error in the initial measurement spreads with time considerably, leading to unpredictable and chaotic behaviour The thesis work is mainly centered on the asymptotic behaviour of nonlinear and nonintegrable dissipative dynamical systems. It is found that completely deterministic nonlinear differential equations describing such systems can exhibit random or chaotic behaviour. Theoretical studies on this chaotic behaviour can enhance our understanding of various phenomena such as turbulence, nonlinear electronic circuits, erratic behaviour of heart and brain, fundamental molecular reactions involving DNA, meteorological phenomena, fluctuations in the cost of materials and so on. Chaos is studied mainly under two different approaches - the nature of the onset of chaos and the statistical description of the chaotic state.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

AIC Tutorial: Building Simple Robots

Practical introduction to building simple electronic circuits and small robots; aimed at computer scientists.q

Alphanumeric LCD infrared control via computer’s parallel port

The present work will explain a method to achieve a remote controlled (via IR LED) alphanumeric Liquid Crystal Display. In modern times, the remote access of different devices has become quite popular, therefore, the aim of this project is to provide a useful tool that will integrate common and easy to access devices. The system includes a C language based user interface, an assembly language code for the AT89C51ED2 microcontroller instructions and some digital electronic circuits needed for the driving and control of both the LCD and the infrared communication, as well as the PC with a parallel port. The interaction of all the devices provides a whole system that can be helpful in different applications, or it can be separated into each one of its different stages to take the best advantage as possible.

A high dynamic range method for the direct readout of a dynamic phase change in homodyne interferometers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Antagonism of myotoxic and paralyzing activities of bothropstoxin-I by surarnin

Polyanionic substances are known to inhibit the myotoxic effects of some crotalide snake venoms. Bothropstoxin-I (BthTX-I), a basic Lys49 phospholipase (PLA(2)) homologue from Bothrops jararacussu venom, besides inducing muscle damage, also promotes the blockade of both directly and indirectly evoked contractions in mouse neuromuscular preparation. In this work, we evaluated the ability of suramin, a polysulfonated naphtylurea derivative, to antagonize the myotoxic and the paralyzing activities of BthTX-I on mice neuromuscular junction in vitro. Myotoxicity was assessed by light and electronic microscopic analysis of extensor digitorum longus (EDL) muscles; paralyzing activity was evaluated through the recording of both directly and indirectly evoked contractions of phrenic-diaphragm (PD) preparations. BthTX-I (1 muM) alone, or pre-incubated with suramin (10 muM) at 37degreesC for 15 min was added to the preparations for 120 min. BthTX-I induced histological alterations typical of myonecrosis in 14.6 +/- 1.0% of EDL muscle fibers. In addition, BthTX-I blocked 50% of both directly and indirectly evoked contractions in PD preparations in 72.1 +/- 9.1 and 21.1 +/- 2.0 min, respectively. Pre-incubation with suramin abolished both the muscle-damaging and muscle-paralyzing activities of BthTX-I. Since suramin is a polyanionic substance, we suggested that its effects result from the formation of inactive acid-base complexes with BthTX-I. (C) 2003 Elsevier Ltd. All rights reserved.

Estudo comparativo morfofuncional de melanócitos em lesões de melasma

FUNDAMENTOS - Melasma é hipermelanose comum caracterizada por máculas acastanhadas em áreas fotoexpostas, cuja fisiopatogenia não é totalmente esclarecida. OBJETIVOS - Caracterizar e comparar morfologica e funcionalmente os melanócitos da epiderme sã com os da pele afetada por melasma. MÉTODOS - Avaliaram-se 12 pacientes portadores de melasma facial, sendo realizadas biópsias da pele lesada e pele sã adjacente. Os cortes foram corados por hematoxilina-eosina, Fontana-Masson, marcados pelo Melan-A e submetidos à microscopia eletrônica. A quantificação epidérmica de melanina e melanócitos foi estimada a partir de análise citomorfométrica digital. RESULTADOS - Todas as pacientes eram mulheres com média de idade 41,3±2,8 anos. Ao Fontana-Masson evidenciou-se importante aumento da melanina epidérmica na pele lesada em relação à pele sã. A marcação pelo Melan-A demonstrou melanócitos maiores com dendritos proeminentes na pele lesada. Observou-se maior densidade de melanina epidérmica na pele lesada, e a análise digital do número de melanócitos da epiderme não demonstrou diferença significativa entre pele lesada e sã. À microscopia eletrônica, observaram-se número aumentado de melanossomas maduros nos ceratinócitos e melanócitos com organelas citoplasmáticas proeminentes na pele lesada. CONCLUSÕES - Melanogênese aumentada na epiderme com melasma em relação à epiderme normal adjacente.

Sistema de extração de potência (power harvesting) usando transdutores piezelétricos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Eletroestimulador funcional de oito canais com malha de realimentação utilizando Controlador Digital

Pós-graduação em Engenharia Elétrica - FEIS

Sensor em fibra óptica aplicado à caracterização de atuadores piezoelétricos flextensionais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento de um circuito eletrônico experimental de anemômetro de fio quente

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Utilização de materiais piezelétricos (PZTS) para coleta e armazenamento de energia

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência do tipo de tratamento superficial na força adesiva do reparo com resina composta em materiais estéticos

Pós-graduação em Ciências Odontológicas - FOAR