Total cross section measurements for ^3He(^3He, 2p)^4He at low energies

Precise measurements of the total reaction cross section for ³He(³He,2p)⁴He He have been made in the range of center-of-mass energies between 1100 keV and 80 keV. A differentially pumped gas target modified to operate with a limited quantity of the target gas was employed to minimize the uncertainties in the primary energy and energy straggle. Beam integration inside the target gas was carried out by a calorimetric device which measures the total energy spent in a heat sink rather than the total charge in a Faraday cup. Proton energy spectra have been obtained using a counter telescope consisting of a gas proportional counter and a surface barrier detector and angular distributions of these protons have been measured at seven bombarding energies. Cross section factors, S(E), have been calculated from the total cross sections and fitted to a linear function of energy over different ranges of energy. For E_cm < 500 keV

S(E_cm) = S₀ + S₁ E_cm

where S₀ = (5.0 ^+0.6_-0.4) MeV - barns and S₁ = (-1.8 ± 0.5) barns.

Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10 12 cm -2), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO 2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles. © 2012 Elsevier B.V. All rights reserved.

Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering

Field emissions (FE) from La-doped zinc oxide (ZnO) films are both experimentally and theoretically investigated. Owing to the La-doped effect, the FE characteristic of ZnO films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4 V/mu m (about 2.5 V/mu m for the undoped ZnO films) is obtained at an emission current density of 1 mu A/cm(2) and the stable current density reaches 1 mA/cm(2) at an applied field of about 2.1 V/mu m. A self-consistent theoretical analysis shows that the novel FE enhancement of the La-doped sample may be originated from its smaller work function. Due to the effect of doping with La, the Fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. Interestingly, it suggests a new effective method to improve the FE properties of film materials.

Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system

The stability and photoemission characteristics for reflection-mode GaAs photocathodes in a demountable vacuum system have been investigated by using spectral response and x-ray photoelectron spectroscopy measurements at room temperature. We find that the shape of the spectral response curve for the cathode changes with time in the vacuum system, but after applying fresh cesium to the degraded cathode, the spectral response can almost be restored. The change and restoration of curve shape are mainly attributed to the evolution of the surface barrier. We illustrate the evolution and analyze the influence of the barrier on the spectral response of the cathode. (C) 2008 American Institute of Physics.

A proposal design of a multi-hit two-dimensional position-sensitive energy spectrum detector

A new non-linear comparison method of charge-division readout scheme is conceived and the first design of a multi-hit two-dimensional position-sensitive energy spectrum Si(Au) surface barrier detector with a continuous sensitive area is proposed.

Polyaniline-coated carbon particles and their electrode behavior in organic carbonate electrolyte

In an attempt to increase the interface stability of carbon used in Li-ion batteries, a thin conducting polyaniline (PANI) film was fabricated on the surface of carbon by in situ chemical polymerization. The chemical and electrochemical properties of the composite material were characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscope, cyclic voltammetry, and electrochemical impedance spectroscopy. It was confirmed that the PANI film has an obvious effect on the morphology and the electrochemical performance of carbon. The results could be attributed to the electronic and electrochemical activity of the conducting PANI films.

Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy

InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent years due to their applications in a variety of devices, including high electron mobility transistors (HEMTs). However, the quality of InAlN remains relatively poor with basic material and structural characteristics remain unclear.

Molecular beam epitaxy (MBE) is used to synthesize the materials for this research, as MBE is a widely used tool for semiconductor growth but has rarely been explored for InAlN growth. X-ray photoelectron spectroscopy (XPS) is used to determine the electronic and chemical characteristics of InAlN surfaces. This tool is used for the first time in application to MBE-grown InAlN and heterostructures for the characterization of surface oxides, the bare surface barrier height (BSBH), and valence band offsets (VBOs).

The surface properties of InAlN are studied in relation to surface oxide characteristics and formation. First, the native oxide compositions are studied. Then, methods enabling the effective removal of the native oxides are found. Finally, annealing is explored for the reliable growth of surface thermal oxides.

The bulk properties of InAlN films are studied. The unintentional compositional grading in InAlN during MBE growth is discovered and found to be affected by strain and relaxation. The optical characterization of InAlN using spectroscopy ellipsometry (SE) is also developed and reveals that a two-phase InAlN model applies to MBE-grown InAlN due to its natural formation of a nanocolumnar microstructure. The insertion of an AlN interlayer is found to mitigate the formation of this microstructure and increases mobility of whole structure by fivefold.

Finally, the synthesis and characterization of InAlN/GaN HEMT device structures are explored. The density and energy distribution of surface states are studied with relationships to surface chemical composition and surface oxide. The determination of the VBOs of InAlN/GaN structures with different In compositions are discussed at last.

Correlation Between the Electrical and Optical Properties of an Atmospheric Pressure Plasma During Siloxane Coating Deposition

The effect of varying process parameters on atmospheric plasma characteristics and properties of nanometre thick siloxane coatings is investigated in a reel-to-reel deposition process. Varying plasma operation modes were observed with increasing applied power for helium and helium/oxygen plasmas. The electrical and optical behaviour of the dielectric barrier discharge were determined from current/voltage, emission spectroscopy and time resolved light emission measurements. As applied power increased, multiple discharge events occurred, producing a uniform multi-peak pseudoglow discharge, resulting in an increase in the discharge gas temperature. The effects of different operating modes on coating oxidation and growth rates were examined by injecting hexamethyldisiloxane liquid precursor into the chamber under varying operating conditions. A quenching effect on the plasma was observed, causing a decrease in plasma input power and emission intensity. Siloxane coatings deposited in helium plasmas had a higher organic component and higher growth rates than those deposited in helium/oxygen plasmas.

DOMINANCE OF SHORT-RANGE-ORDER EFFECTS IN LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY SPECTRA

Using low-energy electron-diffraction (LEED) formalism, we demonstrate theoretically that LEED I-V spectra are characterized mainly by short-range order. We also show experimentally that diffuse LEED (DLEED) I-V spectra can be accurately measured from a disordered system using a video-LEED system even at very low coverage. These spectra demonstrate that experimental DLEED I-V spectra from disordered systems may be used to determine local structures. As an example, it is shown that experimental DLEED I-V spectra from K/Co {1010BAR} at potassium coverages of 0.07, 0.1, and 0.13 monolayer closely resemble calculated and experimental LEED I-V spectra for a well-ordered Co{1010BAR}-c(2X2)-K superstructure, leading to the conclusion that at low coverages, potassium atoms are located in the fourfold-hollow sites and that there is no large bond-length change with coverage.

Novel materials based on chitosan, its derivatives and cellulose fibres

O presente trabalho tem como principal objectivo o desenvolvimento de novos materiais baseados em quitosano, seus derivados e celulose, na forma de nanofibras ou de papel. Em primeiro lugar procedeu-se à purificação das amostras comerciais de quitosano e à sua caracterização exaustiva em termos morfológicos e físicoquímicos. Devido a valores contraditórios encontrados na literatura relativamente à energia de superfície do quitosano, e tendo em conta a sua utilização como precursor de modificações químicas e a sua aplicação em misturas com outros materiais, realizou-se também um estudo sistemático da determinação da energia de superfície do quitosano, da quitina e seus respectivos homólogos monoméricos, por medição de ângulos de contacto Em todas as amostras comerciais destes polímeros identificaram-se impurezas não polares que estão associadas a erros na determinação da componente polar da energia de superfície. Após a remoção destas impurezas, o valor da energia total de superfície (gs), e em particular da sua componente polar, aumentou consideravelmente. Depois de purificadas e caracterizadas, algumas das amostras de quitosano foram então usadas na preparação de filmes nanocompósitos, nomeadamente dois quitosanos com diferentes graus de polimerização, correspondentes derivados solúveis em água (cloreto de N-(3-(N,N,N-trimetilamónio)-2- hidroxipropilo) de quitosano) e nanofibras de celulose como reforço (celulose nanofibrilada (NFC) e celulose bacteriana (BC). Estes filmes transparentes foram preparados através de um processo simples e com conotação ‘verde’ pela dispersão homogénea de diferentes teores de NFC (até 60%) e BC (até 40%) nas soluções de quitosano (1.5% w/v) seguida da evaporação do solvente. Os filmes obtidos foram depois caracterizados por diversas técnicas, tais como SEM, AFM, difracção de raio-X, TGA, DMA, ensaios de tracção e espectroscopia no visível. Estes filmes são altamente transparentes e apresentam melhores propriedades mecânicas e maior estabilidade térmica do que os correspondentes filmes sem reforço. Outra abordagem deste trabalho envolveu o revestimento de folhas de papel de E. globulus com quitosano e dois derivados, um derivado fluorescente e um derivado solúvel em água, numa máquina de revestimentos (‘máquina de colagem’) à escala piloto. Este estudo envolveu inicialmente a deposição de 1 a 5 camadas do derivado de quitosano fluorescente sobre as folhas de papel de forma a estudar a sua distribuição nas folhas em termos de espalhamento e penetração, através de medições de reflectância e luminescência. Os resultados mostraram que, por um lado, a distribuição do quitosano na superfície era homogénea e que, por outro lado, a sua penetração através dos poros do papel cessou após três deposições. Depois da terceira camada verificou-se a formação de um filme contínuo de quitosano sobre a superfície do papel. Estes resultados mostram que este derivado de quitosano fluorescente pode ser utilizado como marcador na optimização e compreensão de mecanismos de deposição de quitosano em papel e outros substratos. Depois de conhecida a distribuição do quitosano nas folhas de papel, estudou-se o efeito do revestimento de quitosano e do seu derivado solúvel em água nas propriedades finais do papel. As propriedades morfológicas, mecânicas, superficiais, ópticas, assim como a permeabilidade ao ar e ao vapor de água, a aptidão à impressão e o envelhecimento do papel, foram exaustivamente avaliadas. De uma forma geral, os revestimentos com quitosano e com o seu derivado solúvel em água tiveram um impacto positivo nas propriedades finais do papel, que se mostrou ser dependente do número de camadas depositadas. Os resultados também mostraram que os papéis revestidos com o derivado solúvel em água apresentaram melhores propriedades ópticas, aptidão à impressão e melhores resultados em relação ao envelhecimento do que os papéis revestidos com quitosano. Assim, o uso de derivados de quitosano solúveis em água em processos de revestimento de papel representa uma estratégia bastante interessante e sustentável para o desenvolvimento de novos materiais funcionais ou na melhoria das propriedades finais dos papéis. Por fim, tendo como objectivo valorizar os resíduos e fracções menos nobres da quitina e do quitosano provenientes da indústria transformadora, estes polímeros foram convertidos em polióis viscosos através de uma reacção simples de oxipropilação. Este processo tem também conotação "verde" uma vez que não requer solvente, não origina subprodutos e não exige nenhuma operação específica (separação, purificação, etc) para isolar o produto da reacção. As amostras de quitina e quitosano foram pré-activadas com KOH e depois modificadas com um excesso de óxido de propileno (PO) num reactor apropriado. Em todos os casos, o produto da reacção foi um líquido viscoso composto por quitina ou quitosano oxipropilados e homopolímero de PO. Estas duas fracções foram separadas e caracterizadas.

Characterization and antimicrobial efficacy against E. coli of a helium/air plasma at atmospheric pressure created in a plastic package

A plasma source, sustained by the application of a floating high voltage (±15 kV) to parallel-plate electrodes at 50 Hz, has been achieved in a helium/air mixture at atmospheric pressure (P = 105 Pa) contained in a zip-locked plastic package placed in the electrode gap. Some of the physical and antimicrobial properties of this apparatus were established with a view to ascertain its performance as a prototype for the disinfection of fresh produce. The current–voltage (I–V) and charge–voltage (Q–V) characteristics of the system were measured as a function of gap distance d, in the range (3 × 103 ≤ Pd ≤ 1.0 × 104 Pa m). The electrical measurements showed this plasma source to exhibit the characteristic behaviour of a dielectric barrier discharge in the filamentary mode and its properties could be accurately interpreted by the two-capacitance in series model. The power consumed by the discharge and the reduced field strength were found to decrease quadratically from 12.0 W to 4.5 W and linearly from 140 Td to 50 Td, respectively, in the range studied. Emission spectra of the discharge were recorded on a relative intensity scale and the dominant spectral features could be assigned to strong vibrational bands in the 2+ and 1− systems of N2 and ${\rm N}_2^+$ , respectively, with other weak signatures from the NO and OH radicals and the N+, He and O atomic species. Absolute spectral intensities were also recorded and interpreted by comparison with the non-equilibrium synthetic spectra generated by the computer code SPECAIR. At an inter-electrode gap of 0.04 m, this comparison yielded typical values for the electron, vibrational and translational (gas) temperatures of (4980 ± 100) K, (2700 ± 200) K and (300 ± 100) K, respectively and an electron density of 1.0 × 1017 m−3. A Boltzmann plot also provided a value of (3200 ± 200 K) for the vibrational temperature. The antimicrobial efficacy was assessed by studying the resistance of both Escherichia coli K12 its isogenic mutants in soxR, soxS, oxyR, rpoS and dnaK selected to identify possible cellular responses and targets related with 5 min exposure to the active gas in proximity of, but not directly in, the path of the discharge filaments. Both the parent strain and mutants populations were significantly reduced by more than 1.5 log cycles in these conditions, showing the potential of the system. Post-treatment storage studies showed that some transcription regulators and specific genes related to oxidative stress play an important role in the E. coli repair mechanism and that plasma exposure affects specific cell regulator systems.

Improved contact load-bearing capacity of ultra-fine grained titanium : Multilayering and grading

The contact load-bearing response and surface damage resistance of multilayered hierarchical structured (MHSed) titanium were determined and compared to monolithic nanostructured titanium. The MHS structure was formed by combining cryorolling with a subsequent Surface Mechanical Attrition Treatment (SMAT) producing a surface structure consisted of an outer amorphous layer containing nanocrystals, an inner nanostructured layer and finally an ultra-fine grained core. The combination of a hard outer layer, a gradual transition layer and a compliant core results in reduced indentation depth, but a deeper and more diffuse sub-surface plastic deformation zone, compared to the monolithic nanostructured Ti. The redistribution of surface loading between the successive layers in the MHS Ti resulted in the suppression of cracking, whereas the monolithic nanograined (NG) Ti exhibited sub-surface cracks at the boundary of the plastic strain field. Finite element models with discrete layers and mechanically graded layersrepresenting the MHS system confirmed the absence of cracking and revealed a 38% decrease in shear stress in the sub-surface plastic strain field, compared to the monolithic NG Ti. Further, the mechanical gradation achieves a more gradual stress distribution which mitigates the interface failure and increases the interfacial toughness, thus providing strong resistance to loading damage. © 2014 Elsevier Ltd.

Descarga em barreira dielétrica: construção de um reator DBD e caracterização mediante análises ópticas e elétricas do plasma produzido

The plasma produced by Dielectric Barrier Discharge (DBD) is a promising technique for producing plasma in atmospheric pressure and has been highlighted in several areas, especially in biomedical and textile industry, this is due to the fact that the plasma generated by DBD not reaches high temperatures, enabling use it for thermally sensitive materials. But still it is necessary the development of research related to understanding of the chemical, physical and biological interaction between the non-thermal plasma at atmospheric pressure with cells, tissues, organs and organisms. This work proposes to develop equipment DBD and characterize it in order to obtain a better understanding of the process parameters of plasma production and how it behaves under the parameters adopted in the process, such as distance, frequency and voltage applied between electrodes. For this purpose two techniques were used to characterize distinct from each other. The first was the method of Lissajous figures, this technique is quite effective and accurately for complete electrical characterization equipment DBD. The second technique used was Optical Emission Spectroscopy (EEO) very effective tool for the diagnosis of plasma with it being possible to identify the excited species present in the plasma produced. Finally comparing the data obtained by the two techniques was possible to identify a set of parameters that optimize the production when combined DBD plasma atmosphere in the equipment was built precisely in this condition 0.5mm-15kV 600Hz, giving way for further work

The natural radioactivity in water by gross alpha and beta measurements

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)