The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Application of ICA in on-line verification of the phase difference of the current sensor

The performance of the current sensor in power equipment may become worse affected by the environment. In this paper, based on ICA, we propose a method for on-line verification of the phase difference of the current sensor. However, not all source components are mutually independent in our application. In order to get an exact result, we have proposed a relative likelihood index to choose an optimal result from different runs. The index is based on the maximum likelihood evaluation theory and the independent subspace analysis. The feasibility of our method has been confirmed by experimental results.

In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy

The interface properties of GaNxAs1-x/GaAs single-quantum well is investigated at 80 K by reflectance difference spectroscopy. Strong in-plane optical anisotropies (IPOA) are observed. Numerical calculations based on a 4 band K . P Hamiltonian are performed to analyze the origin of the optical anisotropy. It is found that the IPOA can be mainly attributed to anisotropic strain effect, which increases with the concentration of nitrogen. The origin of the strain component epsilon(xy) is also discussed.

Analysis of the lateral displacement and optical path difference in wide-field-of-view polarization interference imaging spectrometer

The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.

Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH --> 1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH --> 1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. (C) 2002 Elsevier Science B.V. All rights reserved.

Temperature variation through 2000 years in China: An uncertainty analysis of reconstruction and regional difference

Chinese Academy of Sciences [KZCX2-YW-315, KZCX2-YW-Q1-01]; National Natural Science Foundation of China [40625002, 90502009, 200905006]; Office of Science (BER), U. S. Department of Energy ; EU/FP7 [212250]

Digital simulation in a thin layer spectroelectrochemical cell with minigrid platinum electrode by microregion approximation explicit finite difference method

The microregion approximation explicit finite difference method is used to simulate cyclic voltammetry of an electrochemical reversible system in a three-dimensional thin layer cell with minigrid platinum electrode. The simulated CV curve and potential scan-absorbance curve were in very good accordance with the experimental results, which differed from those at a plate electrode. The influences of sweep rate, thickness of the thin layer, and mesh size on the peak current and peak separation were also studied by numerical analysis, which give some instruction for choosing experimental conditions or designing a thin layer cell. The critical ratio (1.33) of the diffusion path inside the mesh hole and across the thin layer was also obtained. If the ratio is greater than 1.33 by means of reducing the thickness of a thin layer, the electrochemical property will be far away from the thin layer property.

The effect of pH difference between two phases on the partition of lysozyme in aqueous two-phase system

In the investigation of effect of KSCN on the partitioning of lysozyme in PEG2000/ammonium sulfate aqueous two-phase system, it was found that the KSCN could alter the pH difference between the two phases. and thus affect the partition of lysozyme. The relationship between partition coefficients of lysozyme and pH differences between two phases was discussed.

Dependence of linear electro-optic coefficient on difference in the atomic sizes in zinc blende crystals

Covalent radii of the bonding elements have strong effects on the linear electro-optic coefficients of zinc blende crystals; these effects can be quantitatively determined by investigating the relation between the difference in the atomic sizes rho and the magnitude of the linear electro-optic tensor coefficient r(41). It is interesting to note that for the same cation Zn2+, Ga3+, or In3+ the magnitude of r(41) increases with increased covalent radius of the bonded anion r(beta). Especially with the increasing tendency of the parameter rho, the magnitude of r(41) of crystals that have a same cation will increase suddenly when the value of r(beta) becomes larger. (C) 1997 Academic Press.

The Superresolution Problem in Doppler Difference Laser Anemometry

info:eu-repo/semantics/published

Coupled 3-D finite difference time domain and finite volume methods for solving microwave heating in porous media

Computational results for the microwave heating of a porous material are presented in this paper. Combined finite difference time domain and finite volume methods were used to solve equations that describe the electromagnetic field and heat and mass transfer in porous media. The coupling between the two schemes is through a change in dielectric properties which were assumed to be dependent both on temperature and moisture content. The model was able to reflect the evolution of temperature and moisture fields as the moisture in the porous medium evaporates. Moisture movement results from internal pressure gradients produced by the internal heating and phase change.