Investigation of nonlinear dielectric properties in Sr0.75Ba0.25Nb2O6 relaxor ferroelectric thin films

The ac and dc driving fields dependence of the dielectric permittivity for the strontium barium niobate relaxor ferroelectric thin films has been investigated. The nonlinear dielectric properties were obtained by using the measurements of the dielectric permittivity of the material as a function of the ac and dc "bias" electric field amplitude in wide frequency (100 Hz-10 MHz) and temperature (50-450 K) intervals. The results hint the existence of a true mesoscopic dielectric relaxor response in the ferroelectric thin film, which is very similar to those observed in bulk relaxor ferroelectrics. An anomalous behavior of the NL dielectric response was observed when submitted to moderate dc electric fields levels,,indicating a crossover from paraelectric to a glasslike behavior on cooling the sample toward the freezing transition. The obtained results were analyzed within the framework of the models proposed in the current literature.

Dielectric and ferroelectric characteristics of barium zirconate titanate ceramics prepared from mixed oxide method

Barium zirconium titanate (BZT) ceramics were prepared by mixed oxide method. X-ray diffraction showed the presence of a single phase while Raman scattering confirmed structural transitions as a function of different Zr/Ti ratio. The addition of Zr strongly influenced the crystal structure and electrical properties of the ceramics. A typical hysteresis loops were observed for all investigated compositions. BZT ceramics with 15 mol% Zr have shown a ferroelectric to paraelectric transition at around 77 degrees C. (C) 2007 Published by Elsevier B.V.

Dielectric investigations of vanadium modified barium zirconium titanate ceramics obtained from mixed oxide method

Vanadium modified barium zirconium titanate ceramics Ba(Zr(0.10)Ti(0.90))O(3):2V (BZT:2V) were prepared from the mixed oxide method. According to X-ray diffraction analysis, addition of vanadium leads to ceramics free of secondary phases. Electrical characteristics reveal a dielectric permittivity at around 15,000 with low dielectric loss with a remnant polarization (P(r))of 8 mu C/cm(2) at 2 kV/cm. From the obtained results, we assume that vanadium substitution in the BZT lattice affects dielectric characteristics due to the electron-relaxation-mode in which carriers (polarons, protons, and so on) are coupled with existing dielectric modes. (C) 2009 Published by Elsevier B.V.

Mechanical and electrical driving field induced high-frequency dielectric anomalies in ferroelectric systems

Polycrystalline or single-crystal ferroelectric materials present dielectric dispersion in the frequency range 100 MHz-1 GHz that has been attributed to a dispersive ( relaxation-like) mechanism as well as a resonant mechanism. Particularly in 'normal' ferroelectric materials, a dielectric response that is indistinguishable from dispersion or a resonance has been reported. Nevertheless, the reported results are not conclusive enough to distinguish each mechanism clearly. A detailed study of the dielectric dispersion phenomenon has been carried out in PbTiO3-based ferroelectric ceramics, with the composition Pb1-xLaxTiO3 (x = 0.15), over a wide range of temperatures and frequencies, including microwave frequencies. The dielectric response of La-modified lead titanate ferroelectric ceramics, in 'virgin' and poled states, has been investigated in the temperature and frequency ranges 300-450 K and 1 kHz-2 GHz, respectively. The results revealed that the frequency dependence of the dielectric anomalies, depending on the measuring direction with respect to the orientation of the macroscopic polarization, may be described as a general mechanism related to an 'over-damped' resonant process. Applying either a uniaxial stress along the measurement field direction or a poling electric field parallel and/or perpendicular to the measuring direction, a resonant response of the real and imaginary components of the dielectric constant is observed, in contrast to the dispersion behavior obtained in the absence of the stress, for the 'virgin' samples. Both results, resonance and/or dispersion, can be explained by considering a common mechanism involving a resonant response (damped and/or over-damped) which is strongly affected by a ferroelastic-ferroelectric coupling, contributing to the low-field dielectric constant.

Non-Linear Dielectric Properties of PLMN-PT Relaxor Ferroelectrics

Recent investigations on the non-linear (NL) dielectric properties of relaxor ferroelectrics systems, not only as ceramic bodies, but also, in thin films, have showed a significant technological and scientific interest. The most common practical applications of relaxors include multilayer capacitors and actuators. In this work, non-linear dielectric properties of hot-pressed (1-x)[Pb1 -(3/2) yLayMg1/3Nb2/3O3]-xPbTiO3 (PLMN-PT) ferroelectric ceramics were investigated. The NL properties were obtained by using the measurements of the dielectric permittivity of the material as a function of the AC electric field with variable amplitude in the frequency and temperature range of 100 Hz-1 MHz and 50-450 K, respectively. An anomalous behavior of the non-linear dielectric response was observed when submitted to high electric fields levels. The obtained results were analyzed concerning one of the models for the dielectric response of relaxors ferroelectrics materials currently discussed in the literature.

Dielectric properties of pure and lanthanum modified bismuth titanate thin films

We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.

Dielectric tunability in (1-x)[Pb(Mg 1/3Nb 2/3)O 3]-xPbTiO 3 ceramics for tunable devices application

The dielectric properties of the 0.65[Pb(Mg 1/3Nb 2/3)O 3]-0.35PbTiO 3 ferroelectric ceramic composition were investigated viewing the capability to be used for tunable microwave applications. The dielectric response has been studied for three selected temperatures (300 K, 370 K and 400 K), below the paraelectric- ferroelectric phase transition temperature, as a function of the applied 'bias' electric field. The obtained dielectric tunability was found to be around 60 %, under an electric field of 19 kV/cm, which makes the studied ceramic composition an excellent candidate for application in the electro-electronic industry, as tunable devices. © 2010 IEEE.

Influence of microwave energy on structural and piezoelectric response of Bi 4Ti 3O 12 ceramics

Bismuth titanate ceramics (Bi 4Ti 3O 12) with 10 wt% in excess of bismuth (BIT10) were prepared by the polymeric precursor method and sinterized in microwave (MW) and conventional furnaces (CF). The effect of microwave energy on structural and electrical behavior of BIT10 ceramics was investigated by means of X-ray diffraction (XRD), Scanning electron microscopy (SEM) and electrical measurements. The results of the BIT10 ceramics processed in the microwave furnace (MW) showed a high structural organization compared to conventional treatment (CF). Size of grains and dieletrical properties are influenced by annealing conditions while coercitive field is not dependent on it. The maximum dielectric permittivity (12000) was obtained for the sample sintered in the microwave furnace. Piezoelectric force microscopy images reveals that in-plane response may not change its sign upon polarization switching, while the out-of-plane response does with the influence of microwave energy. Copyright © 2010 American Scientific Publishers All rights reserved.

Correlating phase and microstructure development versus dielectric properties in La3+ and Er3+ co-doped Bi4Ti3O12 ferroelectric ceramics

Bi3.25La0.75-xErxTi3O12 and Bi3.25La0.75Ti3-xErxO12-delta ceramics were prepared and studied in this work in terms of dopant-induced phase and microstructure development as well as dielectric response. The results show that introduction of Er3+ tends to reduce the materials' sintering temperature and average grain size. Moreover, it was noted that in these systems the substitution site of this dopant is controlled by valence state and ionic radii mismatch effects. In particular, even when a nominal substitution of Ti4+ is conceived, here it is found that Er3+ also incorporates at the (Bi,La)(3+) sites. These and other interesting concluding remarks from this work, including Er3+ tolerance, were possible only after comparing, especially, the X-ray diffraction results and the intrinsic ferroelectric characteristics extracted from the dielectric measurements. (C) 2011 Elsevier B.V. All rights reserved.

Dielectric and electro-optical properties of some cyanobiphenyl liquid-crystals

A variety of methods have been reviewed for obtaining parallel or perpendicular alignment in liquid-crystal cells. Some of these methods have been selected and developed and were used in polarised spectroscopy, dielectric and electro-optic studies. Also, novel dielectric and electro-optic cells were constructed for use over a range of temperature. Dielectric response of thin layers of E7 and E8 (eutectic mixture liquid-crystals) have been measured in the frequency range (12 Hz-100 kHz) and over a range of temperature (183-337K). Dielectric spectra were also obtained for supercooled E7 and E8 in the Hz and kHz range. When the measuring electric field was parallel to the nematic director, one loss peak (low-frequency relaxation process) was observed for E7 and for E8, that exhibits a Debye-type behaviour in the supercooled systems. When the measuring electric field was perpendicular to the nematic director, two resolved dielectric processes have been observed. The phase transitions, effective molecular polarisabilities, anisotropy of polarisabilities and order parameters of three liquid crystal homologs (5CB, 6CB, and 7CB), 60CB and three eutectic nematic mixtures E7, E8, and E607 were calculated using optical and density data measured at several temperatures. The order parameters calculated using the different methods of Vuks, Neugebauer, Saupe-Maier, and Palffy-Muhoray are nearly the same for the liquid crystals considered in the present study. Also, the interrelationship between density and refractive index and the molecular structure of these liquid crystals were established. Accurate dielectric and dipole results of a range of liquid-crystal forming molecules at several temperatures have reported. The role of the cyano-end group, biphenyl core, and flexible tail in molecular association, were investigated using the dielectric method for some molecules which have a structural relationship to the nematogens. Analysis of the dielectric data for solution of the liquid-crystals indicated a high molecular association, comparable to that observed in the nematic or isotropic phases. Electro-optic Kerr effect were investigated for some alkyl cyanobiphenyls, their nematic mixtures and the eutectic mixture liquid-crystals E7 and E8 in the isotropic phase and solution. The Kerr constant of these liquid crystals found to be very high at the nematic-isotropic transition temperatures as the molecules are expected to be highly ordered close to phase transition temperatures. Dynamic Kerr effect behaviour and transient molecular reorientation were also observed in thin layers of some alkyl cyanobiphenyls. Dichroic ratio R and order parameters of solutions containing some azo and anthraquinone dyes in the nematic solvent (E7 and E8), were investigated by the measurement of the intensity of the absorption bands in the visible region of parallel aligned samples. The effective factors on the dichroic ratio of the dyes dissolved in the nematic solvents were determined and discussed.

Electrical conduction in plasma polymerized thin films of γ-terpinene

Plasma polymerized c-terpinene (pp2GT) thin films are fabricated using RF plasma polymerization. MIM structures are fabricated and using the capacitive structures dielectric properties of the material is studied. The dielectric constant values are found to be in good agreement with those determined from ellipsometric data. At a frequency of 100 kHz, the dielectric constant varies with RF deposition power, from 3.69 (10 W) to 3.24 (75 W). The current density–voltage (J2V) characteristics of pp–GT thin films are investigated as a function of RF deposition power at room temperature to determine the resistivity and DC conduction mechanism of the films. At higher applied voltage region, Schottky conduction is the dominant DC conduction mechanism. The capacitance and the loss tangent are found to be frequency dependent. The conductivity of the pp2GT thin films is found to decrease from 1.39 3 10212 S/cm (10 W) to 1.02 3 10213 S/cm (75 W) and attributed to the change in the chemical composition and structure of the polymer. The breakdown field for pp–GT thin films increases from 1.48 MV/cm (10 W) to 2 MV/cm (75 W). A single broad relaxation peak is observed indicating the contribution of multiple relaxations to the dielectric response for temperature dependent J2V. The distribution of these relaxation times is determined through regularization methods. VC 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 42318.

Terahertz Spectroscopy of Single-Walled Carbon Nanotubes in a Polymer Film: Observation of Low-Frequency Phonons

We investigate the dielectric response of single-walled carbon nanotubes dispersed in poly(vinyl alcohol) matrix by using terahertz time domain spectroscopy. Frequency-dependent real and imaginary parts of the complex dielectric function are measured experimentally in the terahertz regime. The low-frequency phonons of carbon nanotubes, though predicted theoretically, are directly observed for the first time at frequencies 0.26, 0.60, and 0.85 THz. Further, a broad resonance is observed at 1.15 THz associated with the longitudinal acoustic mode of vibration of straight-chain segments of the long polymeric molecules in the film. The latter is observed at 1.24 THz for a pristine polymer film and has been used to derive the size of crystalline lamellae in the film.

Probing disorder in cubic pyrochlore Bi-1 Zn-5(1) Nb-0(1) O-5(7) (BZN) thin films

The dielectric response of pulsed laser ablated Bi-1 Zn-5(1) Nb-0(1) O-5(7) (BZN) thin films are investigated within the temperature range of 300-660 K and frequency range of 100 Hz-100 kHz Thin film exhibited a strong dielectric relaxation behavior A sharp rise in dielectric constant of BZN thin film at high temperatures is related to disorder in canon and anion lattices Observed dielectric relaxation implies a redistribution of charges within the unit cell This phenomenon suggests that the large change in dielectric constant is due to a dynamical rise of dipolar fluctuations in the unit cell XPS spectra of BZN (A(2)B(2)O(6)O') cubic pyrochlore confirm that the relaxation corresponds to the ionic hopping among the A and O' positions of several local potential minima Barrier height for hopping is distributed between 0 and 0 94 eV The O is spectrum confirms presence of two types of oxygen in BZN thin film The disorder in charge neutralized thin film is correlated with XPS spectra (C) 2010 Elsevier Ltd All rights reserved

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

Low-temperature polaronic relaxations with variable range hopping conductivity in FeTiMO(6) (M = Ta,Nb,Sb)

Low-temperature dielectric measurements on FeTiMO(6) (M = Ta,Nb,Sb) rutile-type oxides at frequencies from 0.1 Hz to 10 MHz revealed anomalous dielectric relaxations with frequency dispersion. Unlike the high-temperature relaxor response of these materials, the low-temperature relaxations are polaronic in nature. The relationship between frequency and temperature of dielectric loss peak follows T(-1/4) behavior. The frequency dependence of ac conductivity shows the well-known universal dielectric response, while the dc conductivity follows Mott variable range hopping (VRH) behavior, confirming the polaronic origin of the observed dielectric relaxations. The frequency domain analysis of the dielectric spectra shows evidence for two relaxations, with the high-frequency relaxations following Mott VRH behavior more closely. Significantly, the Cr- and Ga-based analogs, CrTiNbO(6) and GaTiMO(6) (M = Ta,Nb), that were also studied, did not show these anomalies.