Poole-Frenkel effect in Er doped SnO2 thin films deposited by sol-gel-dip-coating

Electrical properties of Er-doped SnO2 thin films obtained by sol-gel-dip-coating technique were measured. When compared to undoped tin dioxide, rare-earth doped films present much higher resistivity, indicating that Er3+ presents an acceptor-like character into the matrix, which leads to a high degree of electric charge compensation. Current-voltage characteristics, measured above room temperature for Er-doped films, lead to non-linear behavior and two conduction regimes. In the lower electric field range the conduction is dominated by Schottky emission over the grain boundary potential barrier, which presents an average value of 0.85 eV. Increasing the applied bias, a second regime of conduction is observed, since the Poole-Frenkel coulombic barrier lowering becomes a significant effect. The obtained activation energy for ionization is 0.67 eV. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The application of thermally stimulated processes to the study of poly p-phenylene sulfide

The electrical properties of poly p-phenylene sulfide (PPS) samples sandwiched between metallic electrodes are studied as a function of the applied voltage, temperature, time, electrode materials, and sample thickness. Superlinear current-voltage characteristics are observed, which are explained in terms of Schottky effect and space-charge limited currents (SCLC). The conductivity data for variable-range hopping have also been studied, but the calculated values of density of states are approximately one order of magnitude higher than those obtained by SCLC measurements. From thermally stimulated polarization currents we observed a current peak around 80°C that was related with the glass transition temperature of PPS. © 1993.

Improved Conductivity Induced by Photodesorption in SnO2 Thin Films Grown by a Sol-Gel Dip Coating Technique

Thin films of undoped and Sb-doped SnO2 have been prepared by a sol-gel dip-coating technique. For the high doping level (2-3 mol% Sb) n-type degenerate conduction is expected, however, measurements of resistance as a function of temperature show that doped samples exhibit strong electron trapping, with capture levels at 39 and 81 meV. Heating in a vacuum and irradiation with UV monochromatic light (305 nm) improve the electrical characteristics, decreasing the carrier capture at low temperature. This suggests an oxygen related level, which can be eliminated by a photodesorption process. Absorption spectral dependence indicates an indirect bandgap transition with Eg ≅ 3.5 eV. Current-voltage characteristics indicate a thermionic emission mechanism through interfacial states.

CMOS-based active pixel for low-light-level detection: Analysis and measurements

An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance of the photodiode is proposed. An analytic expression for the output voltage of the APS obtained with this capacitance model is in good agreement with measurements and is more accurate than the models used previously. A different mode of operation for the APS based on the dc level of the output is suggested. This new mode has better low-light-level sensitivity than the conventional APS operating mode, and it has a slower temporal response to the change of the incident light power. At 1μW/cm2 and lower levels of light, the measured signal-to-noise ratio (SNR) of this new mode is more than 10 dB higher than the SNR of previously reported APS circuits. Also, with an output SNR of about 10 dB, the proposed dc level is capable of detecting light powers as low as 20 nW/cm2, which is about 30 times lower than the light power detected in recent reports by other groups. © 2007 IEEE.

Computer tools to aid the learning and design steps for photovoltaic systems

This paper presents novel simulation tools to assist the lecturers about learning processes on renewable energy sources, considering photovoltaic (PV) systems. The PV behavior, functionality and its interaction with power electronic converters are investigated in the simulation tools. The main PV output characteristics, I (current) versus V (voltage) and P (power) versus V (voltage), were implemented in the tools, in order to aid the users for the design steps. In order to verify the effectiveness of the developed tools the simulation results were compared with Matlab. Finally, a prototype was implemented with the purpose to compare the experimental results with the results from the proposed tools, validating its operational feasibility. © 2011 IEEE.

Deposição e caracterização de filmes finos de GaAs e 'Al IND. 2''O IND. 3' para potencial utilizado em transistores

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Construção de uma junção Josephson em filmes finos supercondutores do sistema Bi1.8Pb0.4Sr2CaCu2Ox tratados termicamente em um forno microondas doméstico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Transporte eletrônico e quiralidade molecular: um estudo de dispositivos orgânicos em sistemas de dois terminais

No presente trabalho, investigamos o transporte eletrônico molecular em dois compostos orgânicos, o Ponceau SS (PSS) e o Oligo-(para)fenileno-vinileno (PPV) através de cálculos ab initio e função de Green de não equilíbrio (FGNE). Estes métodos demonstraram equivalência para a descrição destes dispositivos moleculares. Fizemos cálculos quânticos para o Hamiltoniano derivado de Hartree-Fock (HF) e obtivemos as propriedades de corrente-voltagem (I-V) para as duas estruturas moleculares. Com o método FGNE conseguimos modelar o transporte através de um sistema de multiníveis eletrônicos obtendo a corrente descrevendo as regiões de ressonância e a assimetria do sistema. Como resposta o PSS demonstrou assimetria para polarizações direta e reversa e a ressonância é alcançada mostrando que o dispositivo opere como um transistor molecular bi-direcional. Para o PPV investigamos também as propriedades geométricas através da conexão entre transporte eletrônico e o grau de quiralidade molecular que foi calculado usando o índice quiral que depende apenas das posições atômicas. Obtivemos que moléculas quirais e propriedades estruturais podem induzir uma assimetria no transporte eletrônico, resultando num processo de retificação. Também obtivemos que a resposta elétrica (I-V) e momento de dipolo elétrico são proporcionais ao grau de quiralidade molecular. Estes resultados sugerem que o transporte eletrônico neste sistema pode ser explorado na avaliação do seu grau de quiralidade.

Propriedades multifuncionais do CaCu3Ti4O12: estudo dos mecanismos e suas aplicações

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Técnicas de parametrização para o fluxo de carga continuado desenvolvidas a partir da análise das trajetórias de soluções do fluxo de carga

Pós-graduação em Engenharia Elétrica - FEIS

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Contribuições para o estudo de atribuição de responsabilidades em circuitos elétricos de baixa tensão

Pós-graduação em Engenharia Elétrica - FEB

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.

Polyazomethine with vinylene and phenantridine moieties in the main chain: Synthesis, characterization, opto(electrical) properties and theoretical calculations

The opto(electrical) properties and theoretical calculations of polyazomethine with vinylene and phenantridine moieties in the main chain were investigated in the present study. 2,5-Bis(hexyloxy)-1,4-bis[(2,5-bis(hexyloxy)-4-formyl-phenylenevinylene]benzene was polymerized in solution with 3,8-diamino-6-phenylphenanthridine (PAZ-PV-Ph). The temperatures of 5% weight loss (T-5%) of the polyazomethine was observed at 356 degrees C in nitrogen. Electrochemical properties of thin film of the polymer were studied by differential pulse voltammetry. The HOMO level of the PAZ-PV-Ph was at -4.97 eV. The energy band gap (E-g) was detected of approximately similar to 1.9 eV. Energy band gap (E-gopt) was additionally calculated from absorption spectrum and absorption coefficient alpha. The absorption UV-vis spectra of polyazomethine recorded in solution showed a blue shift in comparison with the solid state. HOMO-LUMO levels and E-g were additionally calculated theoretically by density functional theory and molecular simulations of PAZ-PV-Ph are presented. Current density-voltage (J-U) measurements were performed on ITO/PAZ-PV-Ph/Al, ITO/TiO2/PAZ-PV-Ph/Al and ITO/PEDOT/PAZ-PV-Ph:TiO2/Al devices in the dark and during irradiation with light (under illumination of 1000 W m(-2)). The polymer was tested using AFM technique and roughness (R-a, R-ms) along with skew and kurtosis are presented.