光栅光纤的理论分析和0.85μm半导体激光器的稳频实验

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

~(85)Zr核的高自旋态研究

利用102MeV的28Si束流,通过60Ni(28Si,2pn)熔合蒸发反应布居了85Zr核的高自旋态,测量了γ-γ符合及DCO比值,建立了一个有43条能级,75条γ跃迁的能级纲图,新增加了36条γ跃迁,25条能级.将能级自旋推高到(49/2+),首次观察到了转晕带的第二回弯.并确认了一条建立在17/2-负宇称带上的磁转动带.

~(85)Zr的高自旋态和磁转动带研究

<正>质量数80区的过渡性核表现了集体性和单粒子性的能级结构。对质子数Z为37～40、中子数N=45的原子核,如81Kr,87Mo核,在中低自旋时显示了单粒子特性,而在高自旋态时表现出较多的集体性。 近些年来,在过渡区在束γ谱学,如83Rb、83Y等核研究中,观察到了一串建立在较高K态的增强的△I=1的M1跃迁。它被认为是一种新的激发模式,叫做磁转动带。我们对85Zr的研究目的,一是将其能级推到更高自旋,另一个是寻找该核的磁转动带。

Custo médio de produção de suínos para abate: anexo 19 - março/85.

1985

The mid-infrared dielectric function of NBCO in the a-b plane from 85 K to 300 K

Results are reported on the a-b plane dielectric function (epsilon) of thin-film c-axis NdBa2Cu3O7-delta with close to optimal oxygen doping (T-c similar to 90 K) in the mid-infrared (wavelength 3.392 mum) over the temperature range 85 K to 300 K. An attenuated total reflectance technique based on the excitation of surface plasmon polaritons is used. The results show that \epsilon (r)\ decreases quasi-linearly with increasing temperature, while Ei is invariant with temperature to within experimental uncertainties. Representative values are epsilon = [epsilon (r) + i epsilon (i)] = (-12.9 +/- 0.6) + i(23.0 +/- 1.5) at T similar to 295 K and epsilon = (-15.7 +/- 0.7) + i(23.5 +/- 1.1) at T similar to 90 K. The raw data an interpreted in terms of the generalized Drude model which gives effective scattering rates (1/tau*) that increase with temperature from about 3800 cm(-1) at 90 K to about 4300 cm(-1) at 295 K. There are indications of a superlinear T-dependence in the scattering, 1/tau*: a fit to a function of the form 1/tau* = A + BTalpha gives alpha = 2.8 +/- 0.7. The effective plasma frequency, omega (p)*, with an average value of approximately 21 000 cm(-1) was independent of temperature.