中国蝽科二新种

本文记述了蝽科二新种, 分别属于珀蝽属(Plautia Stal)和卷蝽属(Paterculus Distant). 文中描述所用长度单位均为ｍｍ。

横断山地区的伏绕眼果蝇亚属及三新种(双翅目:果蝇科)

该文记述分布在中国横断山地区绕眼果蝇属伏绕眼果蝇亚属［Amiota(Phortica)］的11个物种, 其中包括3个新种: 不对称绕眼果蝇 A.(P.)acongruens sp.n., 突绕眼果蝇 A.(P.) protrusa sp.n., 韩氏绕眼果蝇 A.(P.)hani sp.n.。

Expression, purification and characterization of recombinant Jerdonitin, a P-II class snake venom metalloproteinase comprising metalloproteinase and disintegrin domains

Jerdonitin is a P-II class snake venom metalloproteinase comprising metalloproteinase and disintegrin domains. In this study, we established a high-level expression system in Pichia pastoris and developed a purification strategy for the recombinant Jerdonitin. This recombinant Jerdonitin degraded fibrinogen at a level of activity comparable with its wild type. The effects of recombinant Jerdonitin on inhibiting ADP-induced human platelet aggregation were in a dose-dependent manner with an IC50 of 248 nM. In addition, we reported here that Jerdonitin can significantly inhibit the growth of several cell lines, including human liver cancer cells (Bel7402), human leukemia cells (K562) and human gastric carcinoma cells (BGC823). This study offers recombinant Jerdonitin that will be valuable for further functional and structural studies of Jerdonitin. (C) 2009 Elsevier Ltd. All rights reserved.

鄱阳湖南矶山自然保护区鲤、鲫的随机扩增多态DNA分析

利用RAPD(随机扩增多态)标记分析湖内鲤、鲫群体遗传多样性,从40个随机引物中各筛选出8个引物适合鲤、鲫群体RAPD扩增。在鲤群体中,共检测出60条带,其中多态性带42条,多态位点比率为70.00%;而在鲫群体中,共检测出61条带,其中多态性带40条,多态位点比率为65.57%。用POPGENE软件分析实验数据,结果显示:湖内鲤群体的遗传多样性水平(He=0.230 1,H0=0.391 0)和鲫群体的遗传多样性水平(He=0.218 6,H0=0.375 8)都较高,都有较大的遗传变异。而在鲤、鲫群体

Cloning and sequencing of the growth hormone gene of large yellow croaker and its phylogenetic significance

Using conserved primers and the PCR reaction, the growth hormone (GH) gene and the 3'-UTR of the large yellow croaker (Pseudosciaena crocea) were amplified and sequenced. The gene structure was analyzed and compared to the GH genes of 5 other percoid fish downloaded from Genbank. Also the GH gene of the large yellow croaker and the genes from 14 Percoidei and 2 Labroidei species were aligned using Clustal X. A matrix of 564 bp was used to construct the phylogenetic tree using maximum parsimony and neighbor-joining methods. Phylogenetic trees by the two methods are identical in most of the clades with high bootstrap support. The results are also identical to those from morphological data. In general, this analysis does not support the monophyly of the families Centropomidae and Carangidae. But our GH gene tree indicates that the representative species of the families Sparidae and Sciaenidae are a monophyletic group.

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique

The mode frequency and the quality factor of nanowire cavities are calculated from the intensity spectrum obtained by the finite-difference time-domain (FDTD) technique and the Pade approximation. In a free-standing nanowire cavity with dielectric constant epsilon = 6.0 and a length of 5 mu m, quality factors of 130, 159, and 151 are obtained for the HE11 modes with a wavelength around 375 nm, at cavity radius of 60, 75, and 90 nm, respectively. The corresponding quality factors reduce to 78, 94, and 86 for a nanowire cavity standing on a sapphire substrate with a refractive index of 1.8. The mode quality factors are also calculated for the TE01 and TM01 modes, and the mode reflectivities are calculated from the mode quality factors.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

42 MeV/u~(12)C与~(115)In反应的靶余核

本实验使用放射化学方法测定了42 MeV/u (12)C与~(115)In相互作用靶余核的生成截面。借助高斯电荷分布的假设得到了靶余核的质量分布。将实验得到的质量分布与熔合碎裂模型和级联的两体衰变模型进行了比较。特别值得注意的是，使用统计的两体衰变模型Monte Carlo GEMINI程序计算第一次与实验结果符合得非常满意。同时计算结果也表明：在42MeV/u的轰击能量下，完全熔合对靶余核的产物仍然有很大的贡献。在同样的假设下，得到了靶余核的同位素分布。可以看到，同位素分布的宽度随靶余核原子序数的增加而增加，在此对利用中能重离子反应生成新的远离β稳定线的缺中子核素进行了讨论

文冠果壳苷对侧脑室注射Aβ_(1-42)致小鼠学习记忆障碍的改善作用

目的研究文冠果壳苷对侧脑室注射β肽淀粉样蛋白1-4(2Aβ1-42)小鼠学习记忆障碍的改善作用,并初步探讨了其作用机制。方法通过避暗和水迷宫实验检测了小鼠的学习记忆能力;使用分光光度计检测小鼠大脑组织中乙酰胆碱酯酶(AchE)和胆碱乙酰转移酶(ChAT)活性的变化。结果小鼠侧脑室注射凝聚态Aβ1-42显著降低了小鼠被动回避学习记忆能力及空间学习记忆能力(P<0.01),并且小鼠大脑AchE和ChAT活性显著降低(P均<0.05);而文冠果壳苷能够显著减少避暗错误次数,延长潜伏期(分别P<0.05、P<0.01);剂量依赖性地缩短水迷宫实验中小鼠到达安全台的游泳时间(分别P<0.05、P<0.01),不同程度地抑制Aβ1-42模型小鼠的AchE和ChAT活性的降低(P<0.05和<0.01)。结论文冠果壳苷对侧脑室注射Aβ1-42小鼠学习记忆障碍具有显著的改善作用,其作用机制可能与保护中枢胆碱能神经细胞,改善中枢胆碱能神经系统功能等有关。

新型化合物[Ni(en)_3]_2[Ni(en)_2(H_2O)_2]·[As_6V_(15)O_(42)]·4H_2O晶体的水热合成与表征

多金属氧酸盐因其在医药临床、工业催化、功能材料等方面的广泛应用而引起人们的关注 [1～ 6 ] ,其中 ,有关钒化学的研究一直很活跃 ,钒具有与钼、钨明显不同的结构特性 ,钒可以采取 VO4 ,VO5和VO6 方式配位 ,同时 ,钒的价态可以是 + 3,+ 4和 + 5价 .由于钒可采取多种配位方式及多种价态 ,与钼酸盐和钨酸盐相比 ,钒酸盐更具有结构柔顺性 ,同时易形成低价或混合价态物种 .在以往的文献中 ,有关 P- V- O体系多金属氧酸盐的水热合成的研究已有大量的报道 [7] ,在常规溶液合成中 ,人们已对As- V- O体系进行了相对深入的研究 ,而有关水热合成的研究报道却很少 ,已见报道的砷钒化合物有K6 [As6 V15O4 2 ( H2 O) ]· 6H2 O[8,9] ,[As8V14 O4 2 ( H2 O) 1/2 ]4 - [10 ] ,[As8V14 O4 2 ( X) ]6 - [11] ( X=SO2 - 3,SO2 - 4,H2 O) .为了探究水热条件下 As- V- O体系的反应特性 ,我们开展了这方面的研究工作 ,并取得了突破性进展 .本文采用中温水热技术合成了含有机基团...