945 resultados para 2-dimensional Gel-electrophoresis


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光敏核不育水稻农垦58S由晚粳农垦58突变形成。具有在适宜温度条件下,长日照诱导雄性不育、短日照诱导雄性可育的基本特性。光敏核不育水稻育性转换机理的阐明是两系法杂交稻技术的关键。 1.克隆光敏不育基因是研究光敏核不育水稻育性转换机理的一个重要方面,本文对通过反映农垦58S和农垦58遗传背景差异的蛋白质或受光周期调节的蛋白质实现克隆光敏不育基因的策略进行了可行性研究,得到以下结果: (1).利用双向电泳技术在光敏核不育水稻是58S叶片中发现一个不存在于农垦58的蛋白质,其分子量为59.8kDa,等电点pH为5.9(称为Pa),该蛋白的存在不受光照条件、发育时期的影响,反映出农垦58S与农垦58遗传背景的差异。 (2).Pa蛋白与农垦58S叶绿体P61蛋白具有相同的分子量、等电点和N-端氨基酸顺序,在不同品种水稻中具有相同的分布,因此它们很可能是同一个蛋白质分子。 (3).利用双向电泳技术发现P61(Pa)和P41蛋白不仅存在于光敏不育系中,也存在于常规可育粳稻中,与光敏不育性状没有平行关系。 (4).利用双向电脉技术发现10天14小时长日照能在农垦58S和农垦58中诱导一个分子量为36kDa、等电点pH为5.2的蛋白质(称为P_b),该蛋白的表达受光敏色素的调控。因此P61(Pa)、P41及P_b蛋白均与光敏不育性状无直接关系,推测克隆这些蛋白的基因无法直接获得光敏不育基因。 2.在育性转换光周期敏感期已经发现长日照使农垦58S叶绿体发育不良,但在苗期光周期敏感期内,目前尚不知长日照是否会有同样的效应。本文以光周期对农垦58S苗期叶绿体发育的影响为主要内容,研究了农垦58S苗期的光周期反应,得到以下结果: (1).农垦58S从5叶龄期至6叶龄期开始对光周期敏感,短日照开始能诱导茎尖分化幼穗。 (2).不同的光周期对农垦58S 4叶龄期新展叶片叶绿体发育的影响无明显差异,叶结体结构与功能均表现正常。 (3).不同的光周期对农垦58S 6叶龄期新展叶片叶绿体发育的影响有明显差异。与短日照相比,长日照引起农垦58S部分叶绿体发育不良,导致光化学活性减弱、超分子结构异常。长日光周期对农垦58S叶绿体发育的不良效应可能是光周期敏感期内存在的一种特殊现象。

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The 16S and 18S rRNA genes of planktonic organisms derived from five stations with nutrient gradients in Lake Donghu, China, were studied by PCR-denaturing gradient gel electrophoresis (DGGE) fingerprinting, and the relationships between the genetic diversity of the plankton community and biotic/abiotic factors are discussed. The concentrations of total nitrogen (TN), total phosphorus (TP), NH4-N and As were found to be significantly related (P < 0.05) to morphological composition of the plankton community. Both chemical and morphological analyses suggested that temporal heterogeneity was comparatively higher than spatial heterogeneity in Lake Donghu. Although the morphological composition was not identical to the DGGE fingerprints in characterizing habitat similarity, the two strongest eutrophic stations (I and II) were always initially grouped into one cluster. Canonical correspondence analysis suggested that the factors strongly correlated with the first two ordination axes were seasonally different. The concentrations of TN and TP and the densities of rotifers and crustaceans were generally the main factors related to the DGGE patterns of the plankton communities. The study suggested that genetic diversity as depicted by metagenomic techniques (such as PCR-DGGE fingerprinting) is a promising tool for ecological study of plankton communities and that such techniques are likely to play an increasingly important role in assessing the environmental conditions of aquatic habitats.

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The magnetocapacitive response of a double-barrier structure (DBS), biased beyond resonances, has been employed to determine the density of states (DOS) of the two-dimensional electron gas residing in the accumulation layer on the incident side of the DBS. An adequate procedure is developed to compare the model calculation of the magnetocapacitance with the experimental C vs B curves measured at different temperatures and biases. The results show that the fitting is not only self-consistent but also remarkably good even in well-defined quantum Hall regimes. As a result, information about the DOS in strong magnetic fields could reliably be extracted.

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By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with a tight-binding scheme, a self-consistent calculation on the resonant tunneling in asymmetric double-barrier structures is presented, in which contributions to resonant tunneling from both three-dimensional (3D) electrons in the contacts and 2D electrons in the spacer or accumulation layers are considered simultaneously. The charge buildup effect on the current versus voltage (I-V) curves is evaluated systematically, showing quantitatively how it results in the I-V bistability and enhanced differences between I-V curves for positive and negative bias in an asymmetric double-barrier structure. Special attention is focused on the interaction between 3D-2D and 2D-2D resonant-tunneling processes, including the suppression of 2D-2D resonant tunneling by the charge buildup in the well accompanying the 3D-2D resonant tunneling. The effects of the emitter doping condition (doping concentration, spacer thickness) on the presence of two types of quasi-2D levels in the emitter accumulation layers, and on the formation of a potential bulge in the emitter region, are discussed in detail in relation to the tunneling process.

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The transient charge response Q(t) of a two-dimensional electron gas (2DEG) in GaAs/AlxGa1-xAs heterostructures to a small pulse of the gate voltage, applied between the top gate and source electrodes in a Corbino structure, was employed to directly measure the effective diffusion constant of a 2DEG in the quantum Hall regime. The measured diffusion constant D showed a drastic change as the magnetic field was swept through the integer fillings of the Landau levels.