鞭毛虫的扫描电镜样品制备

针对鞭毛虫样品制备中的难点,以Bodomorphaminima ,Hollande 1942为材料,对一类个体微小的异养性鞭毛虫的扫描电镜样品的制备做了初步探讨。以载玻片为载体,0 .1%的多聚赖氨酸为粘附剂,2 %的戊二醛为固定剂,采用临界点法干燥,获得了较为满意的扫描电镜照片。该技术可简化样品制备步骤,减少样品损失,对于其他原生动物样品和游离细胞样品扫描电镜的制备也有积极的借鉴意义。

Substrate treatment and drying conditions effect on the properties of roll-to-roll gravure printed PEDOT:PSS thin films

The optical, structural and electrical properties of poly(3,4- ethylenedioxythiophene):poly(4-styrenesulfonic acid) (PEDOT:PSS) thin films printed by roll-to-roll gravure have been investigated. Corona treatment has been applied to enhance the adhesion of PEDOT:PSS on PolyEthylene Terephthalate (PET) web. It has been found that there was a stronger in-depth surface modification of PET with the increase of corona efficiency; however, the adhesion of PEDOT:PSS was not actually affected. Also, Spectroscopic Ellipsometry and Atomic Force Microscopy have been used to extract information on the mechanisms that define PEDOT:PSS properties. The increase of the drying temperature of the PEDOT:PSS films has been found to reduce the remaining water inside the films and lead to the decrease of the PEDOT:PSS particles size. © 2011 Elsevier B.V. All rights reserved.

Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

Proof of solid state cathodoluminescence by using brightness waveform

Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

利用亮度波形证明固态阴极射线发光

制备了3种结构的器件：A：ITO／SiO2／Alq3／Al，B：ITO／Alq3／SiO2／Al，C：ITO／SiO2／Alq3／SiO2／Al。对于器件A和B，在正向偏压（ITO接正极）下才能观察到发光；而对于器件C，在正向和反向偏压下都可以观察到发光。随着电压升高，器件B和C产生的蓝色发光相对绿光逐渐增强。这主要是由于SiO2中的加速电子碰撞激发Alq3发光层产生热电子，并与空穴形成电子空穴对，复合产生蓝光；而对于器件A，在反向偏压下被热电子碰撞激发出的空穴与正向偏压下从Al电极进入的电子复合形成激子，产生绿色发光。这些结构的器件发光不但可来源于电子与积累的空穴复合，而且也来自固态阴极射线发光。

不同长度β_2整合素_M亚基与ICAM-1的亲和性比较

<正>整合素作为细胞表面糖蛋白受体,介导细胞-细胞、细胞-胞外基质以及细胞-病原体间粘附和信息传递,在免疫应答、凝血反应、炎症反应、肿瘤转移和创伤愈合等许多病理生理过程中起重要作用。整合素是由α、β两个亚基非共价结合而成的异源二聚体,其结构类似于两条近平行的腿部支撑着一个球形的头部。研究表明,β_2整合素_M亚基头部的.domain为与配体直接作用的结构域,并可通过"open"或"close"的构象变化