Fault tolerant control using Gaussian processes and model predictive control

Essential ingredients for fault-tolerant control are the ability to represent system behaviour following the occurrence of a fault, and the ability to exploit this representation for deciding control actions. Gaussian processes seem to be very promising candidates for the first of these, and model predictive control has a proven capability for the second. We therefore propose to use the two together to obtain fault-tolerant control functionality. Our proposal is illustrated by several reasonably realistic examples drawn from flight control. © 2013 IEEE.

Gaussian processes for POMDP-based dialogue manager optimization

A partially observable Markov decision process (POMDP) has been proposed as a dialog model that enables automatic optimization of the dialog policy and provides robustness to speech understanding errors. Various approximations allow such a model to be used for building real-world dialog systems. However, they require a large number of dialogs to train the dialog policy and hence they typically rely on the availability of a user simulator. They also require significant designer effort to hand-craft the policy representation. We investigate the use of Gaussian processes (GPs) in policy modeling to overcome these problems. We show that GP policy optimization can be implemented for a real world POMDP dialog manager, and in particular: 1) we examine different formulations of a GP policy to minimize variability in the learning process; 2) we find that the use of GP increases the learning rate by an order of magnitude thereby allowing learning by direct interaction with human users; and 3) we demonstrate that designer effort can be substantially reduced by basing the policy directly on the full belief space thereby avoiding ad hoc feature space modeling. Overall, the GP approach represents an important step forward towards fully automatic dialog policy optimization in real world systems. © 2013 IEEE.

Characterizing the class of local metal sheet thickening processes

The need to create high-value products for specialist applications, and the search for efficient forming routes that obviate the need for some machining steps, is driving Interest In a novel class of forming processes aiming to create locally thickened features within sheet work- pieces. A number of novel forming processes have been proposed to meet this need, but it is as yet unclear which processes will be most effective in creating local thickening of various geometries, and many process configurations have yet to be tried. This paper aims to provide some basic principles for designing and characterising process behaviour. A simplified generic description of sheet thickening processes is provided, with two tools of variable operating on a sheet workpiece in plane strain, with different tool separations and motions parameterised. A comprehensive numerical study of the behaviour of this class of processes is conducted in Abaqus to predict the main characteristics of the material flow in each configuration. The results are used to classify the different basic behaviours that can be achieved by the sheet-bulk thickening processes and to give guidance on future process development, capability and applicability. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA. Weinheim.

Classification using log Gaussian Cox processes

McCullagh and Yang (2006) suggest a family of classification algorithms based on Cox processes. We further investigate the log Gaussian variant which has a number of appealing properties. Conditioned on the covariates, the distribution over labels is given by a type of conditional Markov random field. In the supervised case, computation of the predictive probability of a single test point scales linearly with the number of training points and the multiclass generalization is straightforward. We show new links between the supervised method and classical nonparametric methods. We give a detailed analysis of the pairwise graph representable Markov random field, which we use to extend the model to semi-supervised learning problems, and propose an inference method based on graph min-cuts. We give the first experimental analysis on supervised and semi-supervised datasets and show good empirical performance.

Optimization of control parameters for petroleum waste composting

Composting is being widely employed in the treatment of petroleum waste. The purpose of this study was to find the optimum control parameters for petroleum waste in-vessel composting. Various physical and chemical parameters were monitored to evaluate their influence on the microbial communities present in composting. The CO2 evolution and the number of microorganisms were measured as the activity of composting. The results demonstrated that the optimum temperature, pH and moisture content were 56.5 - 59.5 degreesC, 7.0 - 8.5 and 55 % - 60%, respectively. Under the optimum conditions, the removal efficiency of petroleum hydrocarbon reached 83.29% after 30 days composting.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Optical analysis of dislocation-related physical processes in GaN-based epilayers

In this paper, recent progresses in optical analysis of dislocation-related physical properties in GaN-based epilayers are surveyed with a brief review. The influence of dislocations on both near-band edge emission and yellow luminescence (YL) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. Threading dislocations may introduce non-radiative recombination centers and enhance YL, but their effects are affected by the structural and chemical environment. The minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. The in situ optical monitoring of the strain evolution process is employed during GaN heteroepitaxy using an AIN interlayer. A typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes

The authors report a simple but effective way to improve the surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot (QD) active regions grown by metal-organic chemical vapor deposition (MOCVD), in which GaAs middle spacer and top separate confining heterostructure (SCH) layers are deposited at a low temperature of 560 degrees C to suppress postgrowth annealing effect that can blueshift emission wavelength of QDs. By introducing annealing processes just after depositing the GaAs spacer layers, the authors demonstrate that the surface morphology of the top GaAs SCH layer can be dramatically improved. For a model structure of five-layer QDs, the surface roughness with the introduced annealing processes (IAPs) is reduced to about 1.3 nm (5x5 mu m(2) area), much less than 4.2 nm without the IAPs. Furthermore, photoluminescence measurements show that inserting the annealing steps does not induce any changes in emission wavelength. This dramatic improvement in surface morphology results from the improved GaAs spacer surfaces due to the IAPs. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers based on MOCVD.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

The effects of gravity and crystal orientation on the dissolution of GaSb into InSb melt and the recrystallization of InGaSb were investigated under microgravity condition using a Chinese recoverable satellite and under normal gravity condition on earth. To investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. The InSb crystal melted at 525 degrees C and then a part of GaSb dissolved into the InSb melt during heating to 706 degrees C and this process led to the formation of InGaSb solution. InGaSb solidified during the cooling process. The experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. Under microgravity, as the Ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. On the contrary, for normal gravity condition, as large amounts of Ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. Also. during the cooling process, needle crystals of InGaSb started appearing and the value of x of InxGa1-xSb crystals increased with the decrease of temperature. The GaSb with the (111)B plane dissolved into the InSb melt much more than that of the (111)A plane. (C) 2000 Elsevier Science B.V. All rights reserved.

New annealing processes and explanation for novel silicon pn junctions formed by proton implantation

Proton-implanted n-type Si wafers were annealed at 950 degrees C to achieve novel pn junctions. The novel pn junctions are explained by the combined use of four models. The background (e.g. oxygen impurity) of an Si wafer is suggested to play a key role in creating the novel pn junction.

Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)

A systematic investigation of structure and intrinsic magnetic properties of the compounds Sm3Fe29-xTx (T = V and Cr) and their nitrides has been performed. Nitrogenation resulted in remarkable improvements in the saturation magnetization and anisotropy fields at 4.2 K and room temperature. First order magnetization processes are observed at around 5.7 T for Sm3Fe26.7V2.3 and around 2.8 T for Sm3Fe24.0Cr5.0 and Sm3Fe24.0Cr5.0N4, respectively. The spin reorientation of the easy magnetization direction of Sm3Fe26.7V2.3 is observed at around 230 K. As a preliminary result, the maximum remanence B-r of 0.94 T, the coercivity mu(0)H(C) of 0.75 T, and the maximum energy product (BH) of 108.5 kJ/m(3) for the nitride magnet Sm3Fe26.7V2.3N4 are achieved by ball-milling at 293 K.

The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M

We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.