Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy

Semiconducting chalcogenide glasses in the systems GeSe and GeSeTe with the addition of bismuth show unusual phenomena of p - to - n transition. Samples for characterization were prepared in bulk form by melt-quenching technique, with increasing Bi at. % to replace selenium. Photoluminescence (PL) spectroscopic studies on all the samples were carried out at 4.2K using an Ar-Ion laser for illuminating the samples. The laser power used was 200mw. Both the systems show a decrease in the intensity of PL signal with increasing Bi content. This interesting behavior is discussed on the basis of a charged defect model for chalcogenide glasses, proposed by Mott, Davis and Street (MDS). The effect of bismuth addition on these charged defects is also discussed to explain the carrier type reversal.

Structural and dielectric characteristics of Bi2O3-TiO2-SrB4O7 glasses

Glasses of the composition 0.20 Bi2O3 - 0.30 TiO2 - 0.50 SrB4O7 and 0.30 Bi2O3 - 0.45 TiO2 - 0.25 SrB4O7 have been fabricated by conventional glass processing technique. These glasses have been characterized using X-ray powder diffraction (XRD), differential thermal analysis (DTA) and high resolution transmission electron microscopy (HRTEM). The frequency response of the dielectric constant and the loss tangent of these glasses has been studied. The formation of the crystalline bismuth titanate, Bi4Ti3O12 (BiT) phase in the heat treated samples has been confirmed by XRD and HRTEM studies. The measured ET Of the glass-ceramics are found to be in good agreement with those predicted by the logarithmic mixture rule. Optical second harmonic generation (SHG) at 1064 nm has been observed in the heat treated samples and is attributed to the formation of crystalline Bi4Ti3O12 (BiT) phase in the SrB4O7 (SBO) matrix.

Non-linear electrical response of chalcogenide glasses: Memory state phenomena

Investigations on the switching behaviour of arsenic-tellurium glasses with Ge or Al additives, yield interesting information about the dependence of switching on network rigidity, co-ordination of the constituents, glass transition & ambient temperature and glass forming ability.

Gallium and indium co-doped ZnO thin films for white light emitting diodes

Ga and In co-doped ZnO (GIZO) thin films together with ZnO, In-doped ZnO (IZO), Ga-doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current-voltage characteristics showed relatively lower turn-on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Thermodynamic, Raman and electrical switching studies on Si15Te85-xAgx (4 <= x <= 20) glasses

We have investigated thermal properties of bulk Si15Te85-xAgx (4 <= x <= 20) glasses in detail, through alternating differential scanning calorimetry experiments. The composition dependence of thermal parameters reveal the signatures of rigidity percolation and chemical threshold at compositions x = 12 and x = 19, respectively. The stability and glass forming ability of these glasses have also been determined using the data obtained from different thermodynamic quantities and it is found that the Si15Te85-xAgx glasses in the region 12 <= x <= 17 are more stable when compared to other glasses of the same series. Further, the blueshift observed in Raman spectroscopy investigations, in the composition range 12 <= x <= 13, support the occurrence of stiffness threshold in this composition range. All Si15Te85-xAgx (4 <= x <= 20) glasses are found to exhibit memory type switching (for sample thickness 0.25 mm) in the input current range 3-9 mA. The effect of rigidity percolation and chemical thresholds on switching voltages are observed at x = 12 and 19, respectively. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682759]

Temperature dependent photoemission spectroscopy on lightly-doped sodium tungsten bronze

Temperature dependent photoemission studies on lightly doped (x = 0.025) sodium tungsten bronzes, NaxWO3 have been investigated by high-resolution photoemission spectroscopy. The experimental results show evidence for polaron formation at the valence band edge and the photoemission spectra taken in different modes of the electron analyzer suggest that the density of states at the valence band edge gradually moves to other k-points in the Brillouin zone with increasing temperature and explain the dynamics of polarons in the insulating disordered sodium tungsten bronzes. (C) 2012 Elsevier Ltd. All rights reserved.

Size-mediated cytotoxicity of nanocrystalline titanium dioxide, pure and zinc-doped hydroxyapatite nanoparticles in human hepatoma cells

Nanoparticles are highly used in biological applications including nanomedicine. In this present study, the interaction of HepG2 hepatocellular carcinoma cells (HCC) with hydroxyapatite (HAp), zinc-doped hydroxyapatite, and titanium dioxide (TiO2) nanoparticles were investigated. Hydroxyapatite, zinc-doped hydroxyapatite and titanium dioxide nanoparticles were prepared by wet precipitation method. They were subjected to isochronal annealing at different temperatures. Particle morphology and size distribution were characterized by X-ray diffraction and transmission electron microscope. The nanoparticles were co-cultured with HepG2 cells. MTT assay was employed to evaluate the proliferation of tumor cells. The DNA damaging effect of HAp, Zn-doped HAp, and TiO2 nanoparticles in human hepatoma cells (HepG2) were evaluated using DNA fragmentation studies. The results showed that in HepG2 cells, the anti-tumor activity strongly depend on the size of nanoparticles in HCC cells. Cell cycle arrest analysis for HAp, zinc-doped HAp, and TiO2 nanoparticles revealed the influence of HAp, zinc-doped HAp, and titanium dioxide nanoparticles on the apoptosis of HepG2 cells. The results imply that the novel nano nature effect plays an important role in the biomedicinal application of nanoparticles.

Cobalt-doped ZnO nanowires on quartz: Synthesis by simple chemical method and characterization

The synthesis of cobalt-doped ZnO nanowires is achieved using a simple, metal salt decomposition growth technique. A sequence of drop casting on a quartz substrate held at 100 degrees C and annealing results in the growth of nanowires of average (modal) length similar to 200 nm and diameter of 15 +/- 4 nm and consequently an aspect ratio of similar to 13. A variation in the synthesis process, where the solution of mixed salts is deposited on the substrate at 25 degrees C, yields a grainy film structure which constitutes a useful comparator case. X-ray diffraction shows a preferred 0001] growth direction for the nanowires while a small unit cell volume contraction for Co-doped samples and data from Raman spectroscopy indicate incorporation of the Co dopant into the lattice; neither technique shows explicit evidence of cobalt oxides. Also the nanowire samples display excellent optical transmission across the entire visible range, as well as strong photoluminescence (exciton emission) in the near UV, centered at 3.25 eV. (C) 2012 Elsevier B.V. All rights reserved.

Observation of high pressure o-GeTe phase at ambient pressure in Si-Te-Ge glasses

Te-rich Si15Te85-xGex (1 <= x <= 11) glasses are found to exhibit an anomalous phase separations with germanium composition. The structural transformation of o-GeTe crystalline phase from o-GeTe with a = 11.76 angstrom, b = 16.59 angstrom, c = 17.44 angstrom, to high pressure o-GeTe with a new reduced lattice parameters a = 10.95 angstrom, b = 4.03 angstrom, c = 4.45 angstrom, is observed at T-c3 in the composition range 6 <= x <= 11. Raman studies support the possible existence of high pressure o-GeTe phase which is observed in X-ray diffraction experiments. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. http://dx.doi.org/10.1063/1.3696862]

Excitation energy transfer from dye molecules to doped graphene

Recently, we have reported theoretical studies on the rate of energy transfer from an electronically excited molecule to graphene. It was found that graphene is a very efficient quencher of the electronically excited states and that the rate infinity z(-4). The process was found to be effective up to 30 nm which is well beyond the traditional FRET limit. In this report, we study the transfer of an amount of energy (h) over bar Omega from a dye molecule to doped graphene. We find a crossover of the distance dependence of the rate from z(-4) to exponential as the Fermi level is increasingly shifted into the conduction band, with the crossover occurring at a shift of the Fermi level by an amount (h) over bar Omega/2.

Unusual photoresponse of indium doped ZnO/organic thin film heterojunction

Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT: PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4704655]

Synthesis, characterization, thermo- and photoluminescence properties of Bi3+ co-doped Gd2O3:Eu3+ nanophosphors

Gd2O3:Eu3+ (4 mol%) co-doped with Bi3+ (Bi = 0, 1, 3, 5, 7, 9 and 11 mol%) ions were synthesized by a low-temperature solution combustion method. The powders were calcined at 800A degrees C and were characterized by powder X-ray diffraction (PXRD), transmission electron microscopy (TEM), Fourier transform infrared and UV-Vis spectroscopy. The PXRD profiles confirm that the calcined products were in monoclinic with little cubic phases. The particle sizes were estimated using Scherrer's method and Williamson-Hall plots and are found to be in the ranges 40-60 nm and 30-80 nm, respectively. The results are in good agreement with TEM results. The photoluminescence spectra of the synthesized phosphors excited with 230 nm show emission peaks at similar to 590, 612 and 625 nm, which are due to the transitions D-5(0)-> F-7(0), D-5(0)-> F-7(2) and D-5(0)-> F-7(3) of Eu3+, respectively. It is observed that a significant quenching of Eu3+ emission was observed under 230 nm excitation when Bi3+ was co-doped. On the other hand, upon 350 nm excitation, the luminescent intensity of Eu3+ ions was enhanced by incorporation of Bi3+ (5 mol%) ions. The introduction of Bi3+ ions broadened the excitation band of Eu3+ of which a new strong band occurred ranging from 320 to 380 nm. This has been attributed to the 6s(2)-> 6s6p transition of Bi3+ ions, implying a very efficient energy transfer from Bi3+ ions to Eu3+ ions. The gamma radiation response of Gd2O3:Eu3+ exhibited a dosimetrically useful glow peak at 380A degrees C. Using thermoluminescence glow peaks, the trap parameters have been evaluated and discussed. The observed emission characteristics and energy transfer indicate that Gd2O3:Eu3+, Bi3+ phosphors have promising applications in solid-state lighting.

Electrical conductivity of Ca-doped YFeO3

Electrical conductivity and Seebeck coefficient of calcium-doped YFeO3, a potential cathode material in solid oxide fuel cells (SOFC), are measured as function of temperature and composition in air to resolve conflicts in the literature both on the nature of conduction (n- or p-type) and the types of defects (majority and the minority) present. Compositions of Y1-xCaxFeO3-delta with x = 0.0, 0.025, 0.05 and 0.1 are studied in the temperature range from 625 to 1250 K. All Y1-xCaxFeO3-delta samples show p-type semiconducting behaviour. Addition of Ca up to 5% dramatically increases the conductivity of YFeO3; increase is more gradual up to 10%. A second phase Ca2Fe2O5 appears in the microstructure for Ca concentrations in excess of 11%.

Synthesis of one-dimensional N-doped Ga2O3 nanostructures: different morphologies and different mechanisms

N-doped monoclinic Ga2O3 nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150 degrees C to 1350 degrees C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped Ga2O3 nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the Ga2O3 nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.

Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells

The photoluminescence study of Fermi-edge singularity (FES) in modulation-doped pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs quantum well (QW) heterostructures is presented. In the above QW structures the optical transitions between n = 1 and n = 2 electronic subband to the n = 1 heavy hole subband (E-11 and E-21 transitions, respectively) are observed with FES appearing as a lower energy shoulder to the E-21 transition. The observed FES is attributed to the Fermi wave vector in the first electronic subband under the conditions of population of the second electronic subband. The FES appears at about 10 meV below E-21 transition around 4.2 K. Initially it gets stronger with increasing temperature and becomes a distinct peak at about 20 K. Further increase in temperature quenches FES and reaches the base line at around 40 K.