1000 resultados para Swift ion
Resumo:
A capillary electrophoresis microchip coupled with a confocal laser-induced fluorescence (LIF) detector was successfully constructed for the analysis of trace amounts of heavy metals in environmental sources. A new fluorescence dye, RBPhOH, synthesized from rhodamine B, was utilized in a glass microchip to selectively determine copper with high sensitivity. A series of factors including running buffer concentration, detection voltage, and sample loading time were optimized for maximum LIF detector response and, hence, method sensitivity.
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Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.
Resumo:
Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.
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Submitted by CAS-IR
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Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.
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In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 C and then studied using UV–vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles...
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Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要:在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。
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197Au were irradiated with 47 MeV/u 12C ions. Iridium was produced via the multinucleon transfer reactions in bombardments of 197Au with 12C. and was separated radiochemically from Au and the mixture of the reaction products. The γ radioactivities of Ir isotopes were measured by using a HPGe detector. The production cross sections of Ir isotopes were determined from activities of Ir isotopes at the end of bombardment and the other relative data. It has been found that the cross sections for neutron-rich iso...
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Since the successful completion of the cooling storage ring (CSR) project in China at the end of 2007, high qualitative heavy ion beams with energy ranging from keV to GeV/u have been available at the Heavy Ion Research Facility at Lanzhou (HIRFL). More than 1091 GeV/u C6+particles or 108235 MeV/u Xe particles can be stored in the CSR main-ring and extracted within hundred nano-seconds during the test running,the beam parameters will be improved in the coming years so that high energy density (HED) conditions could be achieved and investigated there. Recent scientific results from the experiments relevant to plasma research on HIRFL are summarized. Dense plasma research with intense heavy ion beams of CSR is proposed here.
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To determine whether adenovirus-mediated wild-type p53 transfer after radiotherapy could radiosensitize non-small-cell lung cancer (NSCLC) cells to subclinical-dose carbon-ion beam (C-beam), H1299 cells were exposed to a C-beam or -ray and then infected with 5 MOI of AdCMV-p53 or GFP (C-beam or -ray with p53 or GFP).Cell cycle was detected by flow cytometric analysis. The apoptosis was examined by a fluorescent microscope with DAPI staining. DNA fragmentation was monitored by the TUNEL assay. P53 mRNA was detected by reverse-transcriptase polymerase chain reaction. The expression of p53, MDM2, and p21 was monitored by Western blot. Survival fractions were determined by colony-forming assay. The percentages of G1-phase cells in C-beam with p53 increased by 8.2%–16.0%, 5.2%–7.0%, and 5.8%–18.9%, respectively, compared with C-beam only, -ray with p53, or p53 only. The accumulation of G2-phase cells in C-beam with p53 increased by 5.7%–8.9% and 8.8%–14.8%, compared with those in -ray with p53 or p53 only, respectively. The percentage of apoptosis for C-beam with p53 increased by 7.4%–19.1%, 5.8%–11.7%, and 5.2%–19.2%, respectively, compared with C-beam only, -ray with p53, or p53 only. The level of p53 mRNA in C-beam with p53 was significantly higher than that in p53 only. The expression level of p53 and p21 in C-beam with p53 was significantly higher than that in both C-beam with GFP and p53 only. The survival fractions for C-beam with p53 were significantly less than those for the other groups (p 0.05). The data suggested that AdCMV-p53 transfer could more efficiently radiosensitize H1299 cells to subclinical-dose C-beam irradiation through the restoration of p53 function.